NRTS6100TFSTWG [ONSEMI]
NRTS6100TFS: 6 A, 100 V High Performance Trench Schottky Rectifier in u8-FL package;
| 型号： | NRTS6100TFSTWG |
| 厂家： | 
ONSEMI |
| 描述： | NRTS6100TFS: 6 A, 100 V High Performance Trench Schottky Rectifier in u8-FL package |
| 文件： | 总6页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Schottky Barrier Rectifier,
Trench-based,
High Performance
NRTS6100TFS
This Trench Schottky rectifier is high performance device in m8−FL
package. The lower forward voltage, less leakage current, and small
junction capacitance are suitable to high switching frequency high
density DC to DC conversion application. Offering higher avalanche
energy capability for Oring or reverse protection application. The
m8−FL package provides an excellent thermal performance, less land
area of board space, and low profile.
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TRENCH SCHOTTKY
RECTIFIER 6.0 AMPERE
100 VOLTS
Features
• Lower Forward Voltage Drop
• Less Leakage Current in High Temperature
• Small Junction Capacitance for High Switching Frequency
• Higher Avalanche Energy Capability
• 175°C Operating Junction Temperature
• Good Alternative Solution of SMA and SMB Package
• Small Footprint − Land Area: 12.5 mm
• Low Profile − Maximum Height of 1.1 mm
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1, 2, 3
Anode
5, 6, 7, 8
Cathode
1
WDFN8
(m8FL)
2
CASE 511AB
FLAT LEAD
MARKING DIAGRAM
Mechanical Characteristics:
• Case: Molded Epoxy
1
A
A
A
C
C
C
C
T610
AYWWG
G
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
NC
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
T610
A
Y
= Specific Device Code
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Applications
• High Switching Frequency DC/DC Converter
nd
• 2 Rectifier
• Freewheeling Diode used with Inductive Load
• Oring / Reverse Protection
ORDERING INFORMATION
†
Device
Package
Shipping
NRTS6100TFSTAG
WDFN8 1500/Tape & Reel
(Pb−Free) Pin1 Upper Left
NRTS6100TFSTWG WDFN8 5000/Tape & Reel
(Pb−Free) Pin1 Upper Left
NRTS6100TFSTBG
NRTS6100TFSTXG
WDFN8 1500/Tape & Reel
(Pb−Free) Pin1 Upper Right
WDFN8 5000/Tape & Reel
(Pb−Free) Pin1 Upper Right
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2021 − Rev. 1
NRTS6100TFS/D
NRTS6100TFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
RWM
R
V
V
Continuous Forward Current (T = 167°C, DC)
I
6
12
A
A
A
C
F(DC)
Peak Repetitive Forward Current (T = 165°C, Square Wave, Duty = 0.5)
I
FRM
C
Non−Repetitive Peak Surge Current
Sinusoidal Halfwave, 8.3 ms
Square wave, 1 ms
I
150
FSM
300
Square wave, 100 ms
500
Non−Repetitive Avalanche Energy (T = 25°C)
E
100
mJ
°C
°C
J
AS
Storage Temperature Range
T
stg
−65 to +175
−55 to +175
3B
Operating Junction Temperature Range (Note 1)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
T
J
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient dP /dT < 1/R
q
D
J
JA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
70
Unit
°C/W
°C/W
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
Thermal Resistance, Junction−to−Case Bottom (Note 2)
Thermal Characterization, Junction−to−Case Top (Note 2)
Thermal Characterization, Junction−to−Lead of Cathode (Note 2)
R
2.4
4.3
2.5
q
JCB
y
JCT
JLC
y
2
2. Assume 600 mm , 1 oz. copper bond pad on a FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage
V
F
V
(I = 3 A, T = 25°C)
0.52
0.47
0.62
0.56
−
−
0.68
0.62
F
J
(I = 3 A, T = 125°C)
F
J
(I = 6 A, T = 25°C)
F
J
(I = 6 A, T = 125°C)
F
J
Instantaneous Reverse Current
I
R
(V = Rated DC Voltage, T = 25°C)
5.2
3.2
50
15
mA
mA
R
J
(V = Rated DC Voltage, T = 125°C)
R
J
Junction Capacitance
C
pF
J
(V = 1 V, T = 25°C, f = 1 MHz)
782
−
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
NRTS6100TFS
TYPICAL CHARACTERISTICS
30
27
24
21
20
18
T = 175°C
T = 175°C
J
J
R
= 70°C/W
R
= 2.4°C/W
q
JA
q
JCB
Square Wave
16
14
12
10
8
D = 0.2
D = 0.3
Square Wave (Duty = 0.5)
DC
18
15
12
9
D = 0.5
DC
6
4
2
0
6
3
0
25 40
55 70
85 100 115 130 145 160 175
25 40 55 70
85 100 115 130 145 160 175
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Forward Current Derating of Case
Temperature
Figure 2. Forward Current Derating of Ambient
Temperature
100
10
100
10
T = 175°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
1
1
T = 25°C
A
T = 125°C
A
T = −20°C
A
T = −40°C
T = −40°C
A
A
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 3. Typical Forward Characteristics
Figure 4. Maximum Forward Characteristics
1.E+00
1.E+00
T = 150°C
A
1.E−01
1.E−02
1.E−01
1.E−02
T = 175°C
A
T = 125°C
A
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −20°C
A
1.E−08
1.E−09
1.E−10
1.E−11
1.E−08
1.E−09
1.E−10
1.E−11
T = −40°C
A
0
10 20 30 40 50 60 70
80 90 100
0
10 20 30 40 50 60 70 80 90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 5. Typical Reverse Characteristics
Figure 6. Maximum Reverse Characteristics
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3
NRTS6100TFS
TYPICAL CHARACTERISTICS
10000
1000
5.0
T = 175°C
J
T = 25°C
J
4.5
4.0
3.5
3.0
2.5
2.0
Square Wave
D = 0.5
DC
D = 0.3
D = 0.2
100
10
1.5
1.0
0.5
0
0.1
1
10
100
0
1
2
3
4
5
6
V , REVERSE VOLTAGE (V)
R
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Typical Junction Capacitance
Figure 8. Average Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
2
Single Pulse
(Assume 600 mm , 1 oz. copper bond pad on a FR4 board)
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 9. Typical Thermal Characteristics, Junction−to−Ambient
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4
NRTS6100TFS
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
c
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.13
1.50
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
SEATING
PLANE
0.005
0.059
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
BOTTOM VIEW
G
2.30
0.57
0.47
0.75
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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