NRVB0540T3G [ONSEMI]
Surface Mount Schottky Power Rectifier;
| 型号： | NRVB0540T3G |
| 厂家： | 
ONSEMI |
| 描述： | Surface Mount Schottky Power Rectifier |
| 文件： | 总5页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR0540T1G,
NRVB0540T1G,
MBR0540T3G,
NRVB0540T3G
Surface Mount
Schottky Power Rectifier
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES, 40 VOLTS
SOD−123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier
principle with a barrier metal that produces optimal forward voltage
drop−reverse current tradeoff. Ideally suited for low voltage, high
frequency rectification, or as a free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package provides an alternative to the
leadless 34 MELF style package.
SOD−123
CASE 425
STYLE 1
Features
Guardring for Stress Protection
Very Low Forward Voltage
Epoxy Meets UL 94 V−0 @ 0.125 in
MARKING DIAGRAM
Package Designed for Optimal Automated Board Assembly
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
B4MG
1
G
B4 = Device Code
M
G
= Date Code
= Pb−Free Package
Mechanical Characteristics
Device Marking: B4
(Note: Microdot may be in either location)
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C max. for 10 Seconds
ESD Rating:
ORDERING INFORMATION
†
Device
Package
Shipping
MBR0540T1G SOD−123
3,000/Tape & Reel
(Pb−Free) (8 mm Tape, 7” Real)
NRVB0540T1G SOD−123
3,000/Tape & Reel
(Pb−Free) (8 mm Tape, 7” Real)
MBR0540T3G SOD−123 10,000/Tape & Reel
(Pb−Free) (8 mm Tape, 13” Real)
Human Body Model = 3B
Machine Model = C
NRVB0540T3G SOD−123 10,000/Tape & Reel
(Pb−Free) (8 mm Tape, 13” Real)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2012 − Rev. 7
MBR0540T1/D
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
40
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
A
O
(At Rated V , T = 115C)
0.5
1.0
R
C
Peak Repetitive Forward Current
I
FRM
(At Rated V , Square Wave, 20 kHz, T = 115C)
R
C
Non−Repetitive Peak Surge Current
I
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature Range
Operating Junction Temperature
5.5
T
, T
−55 to +150
−55 to +150
C
C
stg
C
T
J
Voltage Rate of Change
dv/dt
V/ms
(Rated V , T = 25C)
1000
R
J
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
tja
118
206
C/W
tjl
R
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
v
T = 25C
J
T = 100C
J
V
F
(i = 0.5 A)
F
0.51
0.62
0.46
0.61
F
(i = 1 A)
Maximum Instantaneous Reverse Current (Note 3)
I
R
T = 25C
J
T = 100C
J
mA
(V = 40 V)
R
20
10
13,000
5,000
R
(V = 20 V)
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
100
10
10
1.0
0.1
25C
1.0
T = -40C
T = 125C
J
J
T = 125C
J
T = 25C
J
T = 100C
J
T = 100C
J
T = 25C
J
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.2
0.4
0.6
0.8
1.0
1.2
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
http://onsemi.com
2
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
100E-3
10E-3
100E-3
10E-3
T = 100C
J
1.0E-3
100E-6
10E-6
T = 125C
1.0E-3
100E-6
10E-6
J
T = 100C
J
T = 25C
J
1.0E-6
100E-9
1.0E-6
100E-9
T = 25C
J
0
10
20
30
40
0
10
20
30
40
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
dc
SQUARE WAVE
dc
FREQ = 20 kHz
SQUARE WAVE
I /I = p
o
pk
I /I = 5
o
I /I = p
o
pk
pk
I /I = 10
o
pk
I /I = 5
o
pk
I /I = 20
o
pk
I /I = 10
o
pk
I /I = 20
o
pk
0.05
0
0
0
20
40
60
80
100
120
140
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
T , LEAD TEMPERATURE (C)
L
I , AVERAGE FORWARD CURRENT (AMPS)
O
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
100
126
124
122
120
118
116
T = 25C
J
R
= 118C/W
tja
149C/W
180C/W
206C/W
228C/W
35
114
112
110
10
0
5.0
10
15
20
25
30
35
40
0
5.0
10
15
20
25
30
40
V , REVERSE VOLTAGE (VOLTS)
R
V , DC REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any
reverse voltage conditions. Calculations of T therefore must include forward and reverse power effects. The allowable operating
J
T may be calculated from the equation:
J
T = T
− r(t)(Pf + Pr) where
J
Jmax
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T due to reverse bias under DC conditions only and is calculated as
J
T = T
− r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
J
Jmax
http://onsemi.com
3
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
1E+00
1E-01
50%
20%
10%
5.0%
2.0%
1.0%
1E-02
1E-03
Rtjl(t) = Rtjl*r(t)
0.00001
0.0001
0.001
0.01
0.1
T, TIME (s)
1.0
10
100
1,000
Figure 9. Thermal Response Junction to Lead
1E+00
1E-01
50%
20%
10%
5.0%
2.0%
1E-02
1E-03
1.0%
Rtjl(t) = Rtjl*r(t)
0.00001
0.0001
0.001
0.01
0.1
T, TIME (s)
1.0
10
100
1,000
Figure 10. Thermal Response Junction to Ambient
http://onsemi.com
4
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
---
MAX
MIN
0.037
0.000
0.020
---
NOM
0.046
0.002
0.024
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
A
A1
b
0.94
0.00
0.51
---
1.35
0.10
0.71
0.15
1.80
2.84
3.86
---
H
E
E
c
D
1.40
2.54
3.56
1.60
2.69
3.68
---
0.055
0.100
0.140
0.010
0
0.063
0.106
0.145
---
E
H
E
L
0.25
0
---
---
10
10
q
2
STYLE 1:
q
PIN 1. CATHODE
2. ANODE
L
b
C
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBR0540T1/D
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