NRVB8H100MFST1G [ONSEMI]
Switch Mode Power Rectifiers;
| 型号： | NRVB8H100MFST1G |
| 厂家： | 
ONSEMI |
| 描述： | Switch Mode Power Rectifiers |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR8H100MFS,
NRVB8H100MFS
Switch Mode
Power Rectifiers
Features
• Low Power Loss / High Efficiency
www.onsemi.com
• New Package Provides Capability of Inspection and Probe After
Board Mounting
SCHOTTKY BARRIER
RECTIFIERS
• Guardring for Stress Protection
• Low Forward Voltage Drop
8 AMPERES
100 VOLTS
• 175°C Operating Junction Temperature
• WF Suffix for Products with Wettable Flanks
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These are Pb−Free Devices
Mechanical Characteristics:
MARKING
DIAGRAM
• Case: Epoxy, Molded
A
C
C
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
1
B8H100
AYWZZ
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
B8H100 = Specific Device Code
• Device Meets MSL 1 Requirements
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
100
8.0
R
ORDERING INFORMATION
Average Rectified Forward Current
I
A
A
F(AV)
†
Device
Package Shipping
(Rated V , T = 165°C)
R
C
MBR8H100MFST1G
SO−8 FL 1500 /
Peak Repetitive Forward Current,
I
16
75
FRM
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Rated V , Square Wave,
R
20 kHz, T = 162°C)
C
MBR8H100MFST3G
NRVB8H100MFST1G
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
A
(Pb−Free) Tape & Reel
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
NRVB8H100MFSWFT1G SO−8 FL 1500 /
(Pb−Free) Tape & Reel
FSM
NRVB8H100MFST3G
Storage Temperature Range
T
−65 to +175
−55 to +175
75
°C
°C
mJ
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
NRVB8H100MFSWFT3G SO−8 FL
5000 /
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
(Pb−Free) Tape & Reel
M4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2015 − Rev. 2
MBR8H100MFS/D
MBR8H100MFS, NRVB8H100MFS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
2.2
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 8 Amps, T = 125°C)
0.68
0.81
0.76
0.90
F
J
(i = 8 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated dc Voltage, T = 125°C)
180
0.06
300
2
J
(Rated dc Voltage, T = 25°C)
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100
10
100
10
T = 175°C
A
T = 175°C
A
150°C
1
1
150°C
125°C
125°C
25°C
0.4
−40°C
0.6
25°C
−40°C
0.8
0.1
0.1
0
0.2
0.8
1.0
1.2
0
0.2
0.4
0.6
1.0
1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
1.E−05
1.E−06
1.E−07
T = 25°C
A
1.E−08
1.E−09
1.E−10
T = 25°C
A
T = −40°C
A
T = −40°C
A
1.E−11
1.E−12
1.E−10
1.E−11
0
10 20 30 40
50 60 70 80
90 100
0
10 20 30 40 50 60 70 80 90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
www.onsemi.com
2
MBR8H100MFS, NRVB8H100MFS
TYPICAL CHARACTERISTICS
1,000
20
T = 25°C
J
18
16
14
12
10
dc
100
Square Wave
8
6
4
R
= 2.2°C/W
q
JC
2
0
10
0
10 20 30 40
50 60 70
80 90 100
60
80
100
120
140
160
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
8
I /I = 20
PK AV
T = 175°C
J
7
6
5
4
3
2
I /I = 10
PK AV
I
/I = 5
PK AV
Square Wave
dc
1
0
0
1
2
3
4
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
Single Pulse
0.01
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
PULSE TIME (sec)
Figure 8. Thermal Response
www.onsemi.com
3
MBR8H100MFS, NRVB8H100MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 2:
RECOMMENDED
PIN 1. ANODE
2. ANODE
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
3. ANODE
2X
0.495
4. NO CONNECT
5. CATHODE
4.560
2X
8X b
A B
1.530
0.10
0.05
C
c
e/2
e
L
1
4
3.200
1.330
4.530
K
E2
0.29X05
0.965
PIN 5
(EXPOSED PAD)
M
L1
1
D2
BOTTOM VIEW
4X
1.000
0.750
G
1.270
PITCH
4X
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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MBR8H100MFS/D
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