NRVBA120ENT3G [ONSEMI]
1.0 A, 20 V, Schottky Power Rectifier, Surface Mount;
| 型号： | NRVBA120ENT3G |
| 厂家： | 
ONSEMI |
| 描述： | 1.0 A, 20 V, Schottky Power Rectifier, Surface Mount 测试 光电二极管 整流二极管 |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRA120ET3
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal−to−silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
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SCHOTTKY BARRIER
RECTIFIER
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
1 AMPERE
20 VOLTS
• Optimized for Low Leakage Current
Mechanical Characteristics:
MARKING
DIAGRAM
• Case: Molded Epoxy
• Epoxy Meets UL94, V at 1/8″
O
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
B1E2
SMA
CASE 403D
PLASTIC
B1E2 = Device Code
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Polarity Band Indicates Cathode Lead
• Available in 12 mm Tape, 5000 Units per 13 inch Reel
• Device Meets MSL1 Requirements
ORDERING INFORMATION
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
• Marking: B1E2
†
Device
Package
Shipping
MBRA120ET3
SMA
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
20
V
RRM
RWM
R
Average Rectified Forward Current
I
1.0
40
A
A
O
(At Rated V , T = 125°C)
R
C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
Storage Temperature
T
−55 to +150
−55 to +150
10,000
°C
°C
stg
Operating Junction Temperature
Voltage Rate of Change
T
J
dv/dt
V/ms
(Rated V , T = 25°C)
R
J
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
December, 2003 − Rev. 2
MBRA120ET3/D
MBRA120ET3
THERMAL CHARACTERISTICS
5 mm x 5 mm
1 Inch x 1/2 inch
(Note 2)
(Note 3)
Characteristic
Symbol
Unit
Thermal Resistance − Junction−to−Lead
Thermal Resistance − Junction−to−Ambient
R
34
138
20
77
°C/W
θ
JL
R
θ
JA
ELECTRICAL CHARACTERISTICS
V
F
T = 25°C
J
T = 100°C
J
V
Maximum Instantaneous Forward Voltage (Note 1), See Figure 2
0.455
0.530
0.595
0.360
0.455
0.540
(I = 0.1 A)
F
(I = 1.0 A)
F
(I = 2.0 A)
F
Maximum Instantaneous Reverse Current, See Figure 4
I
R
T = 25°C
J
T = 100°C
J
mA
(V = 20 V)
10
1.0
0.5
1600
500
300
R
(V = 10 V)
R
(V = 5.0 V)
R
1. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads).
3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads).
10
10
150°C
125°C
150°C
100°C
100°C
25°C
25°C
−40°C
1
1
0.1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
V , INSTANTANEOUS VOLTAGE (VOLTS)
F
V , INSTANTANEOUS VOLTAGE (VOLTS)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1E−02
1E−03
1E−04
1E−02
1E−03
150°C
100°C
150°C
125°C
100°C
1E−04
1E−05
1E−06
1E−07
1E−08
75°C
1E−05
1E−06
1E−07
1E−08
25°C
25°C
0
2
4
6
8
10
12 14 16 18 20
0
2
4
6
8
10
12 14 16 18 20
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Maximum Reverse Current
Figure 3. Typical Reverse Current
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2
MBRA120ET3
1.8
1.6
1.4
1.2
1
0.7
0.6
0.5
0.4
0.3
0.2
dc
dc
SQUARE WAVE
SQUARE WAVE
0.8
0.6
0.4
0.1
0
0.2
0
0
20
40
60
80
100
120 140
160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
T , LEAD TEMPERATURE (°C)
L
I , AVERAGE FORWARD CURRENT (AMPS)
O
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1
D = 0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
T, TIME (sec)
1
10
100
1000
Figure 7. Thermal Resistance
1000
100
10
T = 25°C
J
0
2
4
6
8
10 12 14
16
18 20
V , REVERSE VOLTAGE (VOLTS)
R
Figure 8. Typical Junction Capacitance
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3
MBRA120ET3
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS
403D−02.
S
A
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
2.29
1.91
1.27
0.05
0.15
0.76
4.83
MAX
4.57
2.92
2.41
1.63
0.15
0.41
1.52
5.59
A
B
C
D
H
J
0.160
0.090
0.075
0.050
0.002
0.006
0.030
0.190
0.180
0.115
0.095
0.064
0.006
0.016
0.060
0.220
D
B
POLARITY INDICATOR OPTIONAL
AS NEEDED
K
S
C
H
J
K
SOLDERING FOOTPRINT*
0.157
4.0
0.0787
2.0
inches
mm
0.0787
2.0
SMA FOOTPRINT
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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MBRA120ET3/D
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