NRVTS12100PFST3G [ONSEMI]

12 A, 100 V Trench Schottky Rectifier in TO-277 package;
NRVTS12100PFST3G
型号: NRVTS12100PFST3G
厂家: ONSEMI    ONSEMI
描述:

12 A, 100 V Trench Schottky Rectifier in TO-277 package

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中文:  中文翻译
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Schottky Barrier Rectifier,  
Trench-based  
NRTS12100PFS,  
NRVTS12100PFS  
This TO277 trench Schottky rectifier provides fast switching  
performance in a compact thermally efficient package. The TO277  
package provides an excellent alternative to the DPAK, offering  
thermal performance nearly as good in a package occupying less than  
half the board space. Its low profile makes it a good option for flat  
panel display and other applications with limited vertical clearance.  
The device offers low leakage over temperature making it a good  
match for applications requiring low quiescent current.  
www.onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER, 12 AMPERES  
100 VOLTS  
Features  
3
Package Provides Capability of Inspection and Probe After Board  
Mounting  
Low Forward Voltage Drop  
175°C Operating Junction Temperature  
1
2
TO2773LD  
CASE 340CZ  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Anode 1  
3
Compliant  
Cathode  
Anode 2  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.  
Lead Finish: 100% Matte Sn (Tin)  
MARKING DIAGRAM  
Lead and Mounting Surface Temperature for Soldering Purposes:  
T12100  
AWLYW  
260°C Max. for 10 Seconds  
Device Meets MSL 1 Requirements  
T12100 = Specific Device Code  
A
Y
W
WL  
= Assembly Location  
= Year  
= Work Week  
= Wafer Lot  
Applications  
Excellent Alternative to DPAK in SpaceConstrained Automotive  
Applications  
Low Leakage for Higher Temperature Operation  
Output Rectification in Compact Portable Consumer Applications  
Freewheeling Diode used with Inductive Loads  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
1500 /  
NRTS12100PFST3G  
TO277  
(PbFree) Tape & Reel  
NRVTS12100PFST3G TO277 1500 /  
(PbFree) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
January, 2020 Rev. 0  
NRTS12100PFS/D  
NRTS12100PFS, NRVTS12100PFS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
12  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
RWM  
R
V
V
Average Rectified Forward Current  
I
A
A
A
F(AV)  
(T = 160°C)  
C
Peak Repetitive Forward Current,  
I
24  
FRM  
(T = 157°C, Square Wave, Duty = 0.5)  
C
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
I
130  
FSM  
Storage Temperature Range  
Operating Junction Temperature  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
T
65 to +175  
55 to +175  
3B  
°C  
°C  
stg  
T
J
M4  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, JunctiontoAmbient  
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)  
R
69  
°C/W  
θ
JA  
2
Thermal Resistance, JunctiontoCase, Top  
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)  
R
59  
°C/W  
°C/W  
θ
JCT  
JCB  
2
Thermal Resistance, JunctiontoCase, Bottom  
R
1.92  
θ
2
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Typ  
Max  
Unit  
Instantaneous Forward Voltage (Note 1)  
v
V
F
(i = 6 A, T = 25°C)  
0.59  
0.55  
0.75  
0.67  
F
J
(i = 6 A, T = 125°C)  
F
J
(i = 12 A, T = 25°C)  
0.80  
0.71  
F
J
(i = 12 A, T = 125°C)  
F
J
Instantaneous Reverse Current (Note 1)  
i
R
(Rated dc Voltage, T = 25°C)  
6
4.8  
120  
53  
mA  
mA  
J
(Rated dc Voltage, T = 125°C)  
J
Junction Capacitance  
C
pF  
J
(V = 1 V, T = 125°C, 1 MHz)  
930  
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
www.onsemi.com  
2
 
NRTS12100PFS, NRVTS12100PFS  
TYPICAL CHARACTERISTICS  
1.E+00  
100  
10  
1.E01  
T = 175°C  
A
1.E02  
1.E03  
1.E04  
T = 150°C  
T = 175°C  
A
A
T = 125°C  
A
T = 150°C  
A
T = 85°C  
A
T = 125°C  
A
1.E05  
1.E06  
T = 25°C  
A
T = 85°C  
A
1
1.E07  
T = 25°C  
A
1.E08  
1.E09  
T = 55°C  
T = 55°C  
A
A
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
10  
20 30 40 50 60 70  
80 90 100  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
Figure 1. Typical Instantaneous Forward  
Characteristics  
Figure 2. Typical Reverse Characteristics  
10,000  
1000  
40  
35  
30  
25  
20  
15  
R
= 1.92°C/W  
T = 175°C  
q
JC  
T = 25°C  
J
J
DC  
Square Wave  
(Duty = 0.5)  
100  
10  
10  
5
0
0.1  
1
10  
100  
25 40 55 70 85 100 115 130 145 160 175  
V , REVERSE VOLTAGE (V)  
R
T , CASE TEMPERATURE (°C)  
C
Figure 3. Typical Junction Capacitance  
Figure 4. Current Derating  
www.onsemi.com  
3
NRTS12100PFS, NRVTS12100PFS  
TYPICAL CHARACTERISTICS  
12  
10  
8
T = 175°C  
J
Square Wave  
(Duty = 0.5)  
DC  
6
4
2
0
0
2
4
6
8
10  
12  
I , AVERAGE FORWARD CURRENT (A)  
F(AV)  
Figure 5. Forward Power Dissipation  
100  
10  
1
50% (DUTY CYCLE)  
20%  
10%  
5.0%  
2.0%  
1.0%  
0.1  
0.01  
SINGLE PULSE  
2
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)  
0.001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (s)  
Figure 6. Typical Thermal Characteristics, JunctiontoAmbient  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO2773LD  
CASE 340CZ  
ISSUE A  
DATE 14 FEB 2020  
GENERIC  
MARKING DIAGRAM*  
XXXXXX = Specific Device Code  
*This information is generic. Please refer to  
A
Y
= Assembly Location  
= Year  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present. Some products  
may not follow the Generic Marking.  
XXXXXX  
AWLYW  
W
WL  
= Work Week  
= Wafer Lot  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON97727G  
TO2773LD  
PAGE 1 OF 1  
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www.onsemi.com  
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