NRVTS15100PFST3G [ONSEMI]
15 A, 100 V Trench Schottky Rectifier in TO-277 package;型号: | NRVTS15100PFST3G |
厂家: | ONSEMI |
描述: | 15 A, 100 V Trench Schottky Rectifier in TO-277 package |
文件: | 总7页 (文件大小:200K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Schottky Barrier Rectifier,
Trench-based
NRTS15100PFS,
NRVTS15100PFS
This TO−277 trench Schottky rectifier provides fast switching
performance in a compact thermally efficient package. The TO−277
package provides an excellent alternative to the DPAK, offering
thermal performance nearly as good in a package occupying less than
half the board space. Its low profile makes it a good option for flat
panel display and other applications with limited vertical clearance.
The device offers low leakage over temperature making it a good
match for applications requiring low quiescent current.
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SCHOTTKY BARRIER
RECTIFIER, 15 AMPERES
100 VOLTS
Features
3
• Package Provides Capability of Inspection and Probe After Board
Mounting
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
1
2
TO−277−3LD
CASE 340CZ
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Anode 1
3
Compliant
Cathode
Anode 2
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
MARKING DIAGRAM
• Lead and Mounting Surface Temperature for Soldering Purposes:
T15100
AWLYW
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
T15100 = Specific Device Code
A
Y
W
WL
= Assembly Location
= Year
= Work Week
= Wafer Lot
Applications
• Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
• Low Leakage for Higher Temperature Operation
• Output Rectification in Compact Portable Consumer Applications
• Freewheeling Diode used with Inductive Loads
ORDERING INFORMATION
Device
Package
Shipping†
1500 /
NRTS15100PFST3G
TO−277
(Pb−Free) Tape & Reel
NRVTS15100PFST3G TO−277 1500 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2020 − Rev. 0
NRTS15100PFS/D
NRTS15100PFS, NRVTS15100PFS
MAXIMUM RATINGS
Rating
Symbol
Value
100
15
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
A
F(AV)
(T = 157°C)
C
Peak Repetitive Forward Current,
I
30
FRM
(T = 152°C, Square Wave, Duty = 0.5)
C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
200
FSM
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
T
−65 to +175
−55 to +175
3B
°C
°C
stg
T
J
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)
R
68
°C/W
θ
JA
2
Thermal Resistance, Junction−to−Case, Top
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)
R
56
°C/W
°C/W
θ
JCT
JCB
2
Thermal Resistance, Junction−to−Case, Bottom
R
1.8
θ
2
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 7.5 A, T = 25°C)
0.60
0.56
0.77
0.68
−
F
J
(i = 7.5 A, T = 125°C)
−
F
J
(i = 15 A, T = 25°C)
0.81
0.73
F
J
(i = 15 A, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
(Rated dc Voltage, T = 25°C)
5
4.5
50
18
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Junction Capacitance
C
pF
J
(V = 1 V, T = 125°C, 1 MHz)
1150
−
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NRTS15100PFS, NRVTS15100PFS
TYPICAL CHARACTERISTICS
100
10
100
T = 175°C
A
T = 175°C
A
10
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
T = 85°C
A
1
1
T = 85°C
A
T = 25°C
A
T = 25°C
A
T = −55°C
A
T = −55°C
A
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E+00
1.E−01
1.E−02
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 150°C
A
T = 125°C
1.E−03
1.E−04
1.E−03
1.E−04
A
T = 125°C
A
T = 85°C
A
T = 85°C
A
1.E−05
1.E−06
1.E−05
1.E−06
T = 25°C
A
T = 25°C
A
1.E−07
1.E−08
1.E−07
1.E−08
T = −55°C
A
T = −55°C
A
1.E−09
1.E−10
1.E−11
1.E−09
1.E−10
1.E−11
0
10
20 30 40 50 60 70
80 90 100
0
10
20 30 40 50 60 70
80 90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
1000
40
35
30
25
20
15
R
= 1.8°C/W
T = 175°C
q
JC
T = 25°C
J
J
DC
Square Wave
(Duty = 0.5)
100
10
10
5
0
0.1
1
10
100
25 40 55 70 85 100 115 130 145 160 175
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NRTS15100PFS, NRVTS15100PFS
TYPICAL CHARACTERISTICS
14
12
10
8
T = 175°C
J
Square Wave
(Duty = 0.5)
DC
6
4
2
0
0
3
6
9
12
15
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.1
0.01
SINGLE PULSE
2
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 8. Typical Thermal Characteristics, Junction−to−Ambient
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4
NRTS15100PFS, NRVTS15100PFS
PACKAGE DIMENSIONS
TO−277−3LD
CASE 340CZ
ISSUE O
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5
NRTS15100PFS, NRVTS15100PFS
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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