NRVTS30120MFST3G [ONSEMI]
30A, 120V High Performance Trench Schottky Rectifier in SO8-FL package;
| 型号： | NRVTS30120MFST3G |
| 厂家： | 
ONSEMI |
| 描述： | 30A, 120V High Performance Trench Schottky Rectifier in SO8-FL package |
| 文件： | 总6页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Schottky Barrier Rectifier
Trench-based, High
Performance
NRVTS30120MFS
This Trench Schottky rectifier is high performance device in SO−8
FL package. The lower forward voltage, less leakage current, and
small junction capacitance are suitable to high switching frequency
high density DC to DC conversion application. Offering higher
avalanche energy capability for Oring or reverse protection
application. The SO−8 FL package provides an excellent thermal
performance, less land area of board space, and low profile.
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TRENCH SCHOTTKY
RECTIFIER
30 AMPERES
120 VOLTS
Features
• Lower Forward Voltage Drop
• Less Leakage Current in High Temperature
• Small Junction Capacitance for High Switching Frequency
• Higher Avalanche Energy Capability
• 175°C Operating Junction Temperature
• Good Alternative Solution of SMC and DPAK Package
5,6
1,2,3
MARKING
DIAGRAM
A
2
C
C
• Small Footprint − Land Area: 31.2 mm
1
A
A
T30120
AYWZZ
• Low Profile − Maximum Height of 1.1 mm
• NRVTS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
T30120 = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
ORDERING INFORMATION
• Weight: 95 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
†
Device
Package
Shipping
NRVTS30120MFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
• MSL 1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
Applications
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
• High Switching Frequency DC/DC Converter
nd
• 2 Rectifier
• Freewheeling Diode used with Inductive Load
• Oring / Reverse Protection
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2021 − Rev. 0
NRVTS30120MFS/D
NRVTS30120MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
120
V
RRM
RWM
R
V
V
Continuous Forward Current (T = 162°C, DC)
I
30
60
A
A
A
C
F(DC)
Peak Repetitive Forward Current (T = 159°C, Square Wave, Duty = 0.5)
I
FRM
C
Non−Repetitive Peak Surge Current
Sinusoidal Halfwave, 8.3 ms
Square wave, 1 ms
I
300
FSM
370
Square wave, 100 ms
650
Non−Repetitive Avalanche Energy (T = 25°C)
E
350
mJ
°C
°C
J
AS
Storage Temperature Range
T
stg
−65 to +175
−55 to +175
38
Operating Junction Temperature Range (Note 1)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
T
J
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient dP /dT < 1/R
q
D
J
JA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
56
Unit
°C/W
°C/W
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
Thermal Resistance, Junction−to−Case Bottom (Note 2)
Thermal Characterization, Junction−to−Case Top (Note 2)
Thermal Characterization, Junction−to−Lead of Cathode (Note 2)
R
0.71
3.8
q
JCB
y
JCT
JLC
y
1.6
2
2. Assume 600 mm , 1 oz. copper bond pad on a FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage
V
F
V
(I = 15 A, T = 25°C)
0.65
0.58
0.85
0.67
−
−
0.95
0.73
F
J
(I = 15 A, T = 125°C)
F
J
(I = 30 A, T = 25°C)
F
J
(I = 30 A, T = 125°C)
F
J
Instantaneous Reverse Current
I
R
(V = Rated DC Voltage, T = 25°C)
22
14
150
40
mA
mA
R
J
(V = Rated DC Voltage, T = 125°C)
R
J
Junction Capacitance
C
pF
J
(V = 1 V, T = 25°C, f = 1 MHz)
1470
−
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NRVTS30120MFS
TYPICAL CHARACTERISTICS
120
110
100
90
30
T = 175°C
J
T = 175°C
J
R
= 0.71°C/W
q
JCB
R
= 56°C/W
q
JA
25
20
15
10
Square Wave
D = 0.2
D = 0.3
Square Wave (Duty = 0.5)
80
70
60
50
40
30
DC
D = 0.5
DC
20
10
0
5
0
25 40 55 70 85 100 115 130 145 160 175
25 40 55 70 85 100 115 130 145 160 175
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Forward Current Derating of Case
Temperature
Figure 2. Forward Current Derating of Ambient
Temperature
100
10
100
10
T = 175°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 125°C
A
1
1
T = 25°C
A
T = −20°C
A
T = −40°C
T = −40°C
A
A
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 3. Typical Forward Characteristics
Figure 4. Maximum Forward Characteristics
1.E+00
1.E−01
1.E−02
1.E−00
1.E−01
1.E−02
1.E−03
1.E−04
T = 150°C
A
T = 175°C
A
T = 125°C
A
1.E−03
1.E−04
T = 125°C
A
T = 85°C
A
1.E−05
1.E−06
T = 25°C
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
A
T = 25°C
A
1.E−07
1.E−08
T = −20°C
A
T = −40°C
A
T = −40°C
A
1.E−09
1.E−10
1.E−11
1.E−10
1.E−11
0
10 20 30 40 50 60 70 80 90 100 110 120
0
10 20 30 40 50 60 70 80 90 100 110 120
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 5. Typical Reverse Characteristics
Figure 6. Maximum Reverse Characteristics
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3
NRVTS30120MFS
TYPICAL CHARACTERISTICS
10,000
1000
25
T = 175°C
J
T = 25°C
J
D = 0.5
DC
Square Wave
20
15
10
D = 0.3
D = 0.2
100
10
5
0
0.1
1
10
100
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (V)
R
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Typical Junction Capacitance
Figure 8. Average Forward Power Dissipation
100
50% (DUTY CYCLE)
20%
10%
5.0%
10
1
2.0%
1.0%
0.1
0.01
SINGLE PULSE
2
(Assumes 600 mm , 1 oz. copper bond pad on a FR4 board)
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 9. Typical Thermal Characteristics, Junction−to−Ambient
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4
NRVTS30120MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
SOLDERING FOOTPRINT*
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
0.495
SIDE VIEW
DETAIL A
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.475
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
1
L1
0.965
4X
D2
BOTTOM VIEW
1.000
G
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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