NRVTS8H120EMFST3G [ONSEMI]
Trench Schottky, 120V, 8A in SO8FL Package;
| 型号： | NRVTS8H120EMFST3G |
| 厂家： | 
ONSEMI |
| 描述： | Trench Schottky, 120V, 8A in SO8FL Package |
| 文件： | 总6页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NRVTS8H120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
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• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
TRENCH SCHOTTKY
RECTIFIERS
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
8 AMPERES
120 VOLTS
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
Typical Applications
A
C
C
1
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
A
A
TE8H12
AYWWZZ
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
• Freewheeling and OR−ing Diodes
• Reverse Battery Protection
• LED Lighting
TE8H12 = Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
ORDERING INFORMATION
Device
Package
Shipping†
1500 /
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
NRVTS8H120EMFST1G SO−8 FL
(Pb−Free) Tape & Reel
NRVTS8H120EMFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2018 − Rev. 1
NRVTS8H120EMFS/D
NRVTS8H120EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
120
8.0
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 163°C)
R
C
Peak Repetitive Forward Current,
I
16
FRM
(Rated V , Square Wave, 20 kHz, T = 161°C)
R
C
Non−Repetitive Peak Surge Current
I
150
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +175
−55 to +175
°C
°C
stg
Operating Junction Temperature
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
2.7
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
V
F
V
(I = 4 A, T = 25°C)
0.559
0.765
−
0.85
F
J
(I = 8 A, T = 25°C)
F
J
(I = 4 A, T = 125°C)
0.537
0.620
−
0.65
F
J
(I = 8 A, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
I
R
(V = 90 V, T = 25°C)
1.7
7.1
−
50
mA
mA
R
J
(Rated dc Voltage, T = 25°C)
J
(V = 90 V, T = 125°C)
2.6
6.5
−
25
mA
mA
R
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NRVTS8H120EMFS
TYPICAL CHARACTERISTICS
100
10
100
T = 175°C
T = 175°C
A
A
T = 150°C
A
T = 150°C
A
T = 25°C
A
T = 125°C
A
T = 25°C
A
10
T = 125°C
A
T = 85°C
A
T = 85°C
A
1
1
T = −55°C
T = −55°C
A
A
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 125°C
A
T = 150°C
A
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
T = 125°C
A
T = 85°C
A
T = 85°C
A
T = 25°C
A
T = 25°C
A
T = −55°C
A
T = −55°C
A
1.E−09
1.E−10
1.E−09
1.E−10
10 20 30 40 50 60 70 80 90 100 110 120
10 20 30 40 50 60 70 80 90 100 110 120
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
16
14
12
T = 25°C
J
R
= 2.7°C/W
q
JC
DC
10
8
Square Wave
100
6
4
2
0
10
0.1
1
10
100
105
115
125
135
145
155
165 175
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Device
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3
NRVTS8H120EMFS
TYPICAL CHARACTERISTICS
7
6
5
I
/I = 10
Square Wave
I /I = 5
PK AV
PK AV
I
/I = 20
PK AV
dc
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Typical Thermal Characteristics, Junction−to−Ambient
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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