NS6A6.0AFT3G [ONSEMI]
Watt Peak Power Zener Transient Voltage Suppressors;
| 型号： | NS6A6.0AFT3G |
| 厂家： | 
ONSEMI |
| 描述： | Watt Peak Power Zener Transient Voltage Suppressors |
| 文件： | 总5页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NS6A5.0AFT3G,
SZNS6A5.0AFT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
http://onsemi.com
Unidirectional
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
The NS6AxxAFT3G series is designed to protect voltage sensitive
components from high voltage, high energy transients. This device
has excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NS6AxxAFT3G series is
ideally suited for use in computer hard disk drives, communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Cathode
Anode
Specification Features:
SMA−FL
CASE 403AA
• Peak Reverse Working Voltage Range − 5 V to 64 V
• Peak Pulse Power of 600 W (10 x 1000 msec)
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• ESD Rating of Class 4 (>8 kV) IEC 61000−4−2
• Fast Response Time
• Low Profile Package
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MARKING DIAGRAM
xxx
AYWWG
xxx = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
G
= Pb−Free Package
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
ORDERING INFORMATION
†
Device
Package
Shipping
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
NS6AxxAFT3G,
SZNS6AxxAFT3G
SMA−FL
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
August, 2014 − Rev. 2
NS6A5.0AF/D
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
600
Unit
W
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
P
PK
L
DC Power Dissipation @ T = 75°C
P
D
1.5
W
L
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
20
50
mW/°C
°C/W
R
q
JL
DC Power Dissipation (Note 3) @ T = 25°C
P
0.5
4.0
250
W
mW/°C
°C/W
A
D
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
R
I
q
JA
Forward Surge Current (Note 4) @ T = 25°C
40
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
A
otherwise noted, V = 3.5 V Max. @ I (Note 5) = 30 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
I
F
Forward Current
I
PP
V
F
Forward Voltage @ I
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
Uni−Directional TVS
http://onsemi.com
2
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
V
C
@ I (Note 8)
PP
V
RWM
C
typ
V
BR
(Note 7) Volts
@ I
V
C
I
PP
(Note 6)
(Note 9)
I
R
@ V
RWM
T
Device
Min
Nom
Max
mA
V
5
mA
800
800
500
500
100
50
10
5
V
A
pF
Marking
Device*
NS6A5.0AFT3G
NS6A6.0AFT3G
NS6A6.5AFT3G
NS6A7.0AFT3G
NS6A7.5AFT3G
NS6A8.0AFT3G
NS6A8.5AFT3G
NS6A9.0AFT3G
NS6A10AFT3G
NS6A11AFT3G
NS6A12AFT3G
NS6A13AFT3G
NS6A14AFT3G
NS6A15AFT3G
NS6A16AFT3G
NS6A17AFT3G
NS6A18AFT3G
NS6A20AFT3G
NS6A22AFT3G
NS6A24AFT3G
NS6A26AFT3G
NS6A28AFT3G
NS6A30AFT3G
NS6A33AFT3G
NS6A36AFT3G
NS6A40AFT3G
NS6A43AFT3G
NS6A45AFT3G
NS6A48AFT3G
NS6A51AFT3G
NS6A54AFT3G
NS6A58AFT3G
NS6A60AFT3G
NS6A64AFT3G
6AA
6AB
6AC
6AD
6AE
6AF
6AG
6AH
6AI
6.4
6.67
7.22
7.78
8.33
8.89
9.44
10
6.70
7.02
7
10
10
10
10
1
9.2
65.2
58.3
53.6
50
2700
2300
2140
2005
1890
1780
1690
1605
1460
1345
1245
1160
1085
1020
965
6
7.37
7.98
8.6
10.3
11.2
12
6.5
7
7.60
8.19
7.5
8
8.77
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
12.9
13.6
14.4
15.4
17
46.5
44.1
41.7
39
9.36
1
8.5
9
9.92
1
10.55
11.70
12.85
14.00
15.15
16.40
17.60
18.75
19.90
21.05
23.35
25.65
28.10
30.40
32.75
35.05
38.65
42.10
46.75
50.30
52.65
56.10
59.70
63.15
67.80
70.20
74.85
1
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
5
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20
1
35.3
33
6AL
6AJ
6AK
6AM
6AN
6AO
6AP
6AQ
6AR
6AS
6AT
6AU
6AV
6AW
6AX
6AY
6AZ
6A0
6A1
6A2
6A3
6A4
6A5
6A7
6A8
5
1
18.2
19.9
21.5
23.2
24.4
26
5
1
30.2
27.9
25.8
24
5
1
5
1
5
1
5
1
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
5
1
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.2
77.4
82.4
87.1
93.6
96.8
103
915
5
1
870
5
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
1
790
5
1
730
5
1
675
5
1
630
5
1
590
5
1
555
5
1
510
5
1
470
5
44.4
47.8
50
1
430
5
1
8.6
400
5
1
8.3
385
5
53.3
56.7
60
1
7.7
365
5
1
7.3
345
5
1
6.9
330
5
64.4
66.7
71.1
1
6.4
310
5
1
6.2
300
5
1
5.8
280
*Includes SZ−prefix devices where applicable.
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
the DC or continuous peak operating voltage level.
), which should be equal to or greater than
RWM
7. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
8. Surge current waveform per Figure 1.
9. Bias Voltage = 0 V, F = 1 MHz, T = 25°C.
J
http://onsemi.com
3
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
160
PULSE WIDTH (t ) IS DEFINED AS
P
THAT POINT WHERE THE PEAK
t ≤ 10 ms
rꢀ
140
120
CURRENT DECAYS TO 50% OF I
.
PP
100
50
0
PEAK VALUE - I
PP
100
80
I
PP
2
HALF VALUE -
60
40
20
0
t
P
0
1
2
3
4
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
t, TIME (ms)
Figure 1. 10 × 1000 ms Pulse Waveform
Figure 2. Pulse Derating Curve
Z
in
LOAD
V
in
V
L
Figure 3. Typical Protection Circuit
http://onsemi.com
4
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN
MAX
1.10
1.65
0.30
2.80
5.40
4.60
1.10
D
A
b
c
D
E
0.90
1.25
0.15
2.40
4.80
TOP VIEW
SIDE VIEW
E1 4.00
0.70
L
A
RECOMMENDED
SOLDER FOOTPRINT*
c
SEATING
PLANE
C
5.56
1.76
2X b
1.30
DIMENSIONS: MILLIMETERS
2X
L
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NS6A5.0AF/D
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