NSBA115TF3T5G [ONSEMI]

Digital Transistors (BRT); 数字晶体管（ BRT ）


型号：	NSBA115TF3T5G
厂家：	ONSEMI
描述：	Digital Transistors (BRT) 数字晶体管（ BRT ）晶体数字晶体管
文件：	总6页 (文件大小：113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NSBA114EF3T5G Series

Preferred Devices

Digital Transistors (BRT)

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−1123 package which is designed for low power surface mount

applications.

http://onsemi.com

PNP SILICON DIGITAL

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

PIN 2

EMITTER

(GROUND)

• The SOT−1123 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

• These are Halide−Free Devices

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

SOT−1123

CASE 524AA

STYLE 1

CBO

CEO

Vdc

100

mAdc

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

x M

= Device Code

= Date Code

G or G = Pb−Free Package

ORDERING INFORMATION

†

Device

Package

Shipping

NSBA114EFT5G SOT−1123 8000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

September, 2008 − Rev. 2

NSBA114EF3/D

NSBA114EF3T5G Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T = 25°C (Note 1)

254

2.0

mW/°C

Derate above 25°C

Thermal Resistance (Note 1)

Junction-to-Ambient

493

°C/W

Total Device Dissipation

T = 25°C (Note 2)

297

2.4

mW/°C

Derate above 25°C

Thermal Resistance (Note 2) Junction-to-Ambient

Thermal Resistance (Note 1) Junction-to-Lead 3

Junction and Storage Temperature

421

193

°C/W

°C

T , T

−55 to +150

stg

1. FR−4 @ 100 mm , 1 oz. copper traces, still air.

2. FR−4 @ 500 mm , 1 oz. copper traces, still air.

ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES

†

Device

NSBA114EF3T5G

NSBA124EF3T5G

NSBA144EF3T5G

NSBA114YF3T5TG

NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

NSBA114TF3T5G

NSBA115TF3T5G

Marking*

F (0°)

R1 (k)

R2 (k)

∞

Package

Shipping

Y (0°)

E (0°)

K (0°)

F (90°)

A (90°)

E (90°)

J (90°)

D (90°)

L (90°)

Q (90°)

2.2

4.7

2.2

SOT−1123

(Pb−Free)

4.7

∞

8000 / Tape & Reel

100

∞

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

*(XX°) = Degree rotation in the clockwise direction.

http://onsemi.com

NSBA114EF3T5G Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Base Cutoff Current (V = 50 V, I = 0)

Symbol

Min

Typ

Max

Unit

−

100

500

nAdc

mAdc

CBO

Collector−Emitter Cutoff Current (V = 50 V, I = 0)

CEO

Emitter−Base Cutoff Current

(V = 6.0 V, I = 0)

NSBA114EF3T5G

NSBA124EF3T5G

NSBA144EF3T5G

−

0.5

0.2

0.1

0.2

4.0

0.9

1.5

0.1

0.18

0.2

0.13

EBO

NSBA114YF3T5TG

NSBA123TF3T5G

NSBA114TF3T5G

NSBA143EF3T5G

NSBA115T53T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

Collector−Base Breakdown Voltage (I = 10 mA, I = 0)

−

Vdc

(BR)CBO

Collector−Emitter Breakdown Voltage (Note 3)

(BR)CEO

(I = 2.0 mA, I = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain

NSBA114EF3T5G

NSBA124EF3T5G

NSBA144EF3T5G

160

−

(V = 10 V, I = 5.0 mA)

100

140

350

140

250

NSBA114YF3T5TG

NSBA115TF3T5G/NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

NSBA114TF3T5G

Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)

CE(sat)

−

0.25

Vdc

NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G

NSBA114YF3T5G/NSBA123TF3T5G/NSBA123JF3T5G

NSBA144WF3T5G

(I = 10 mA, I = 1 mA)

NSBA143ZF3T5G/NSBA143EF3T5G/NSBA114TF3T5G

(I = 10 mA, I = 5 mA)

NSBA115TF3T5G

Output Voltage (on)

(V = 5.0 V, V = 2.5 V, R = 1.0 kW)

NSBA114TF3T5G

NSBA114EF3T5G

NSBA124EF3T5G

NSBA114YF3T5G

NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144EF3T5G

NSBA144WF3T5G

NSBA115TF3T5G

−

0.2

(V = 5.0 V, V = 3.5 V, R = 1.0 kW)

(V = 5.0 V, V = 4.0 V, R = 1.0 kW)

(V = 5.0 V, V = 5.0 V, R = 1.0 kW)

Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)

4.9

−

Vdc

NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G

NSBA114YEF3T5G/NSBA143ZF3T5G/NSBA123JF3TG

NSBA144WF3T5G

(V = 5.0 V, V = 0.25 V, R = 1.0 kW)

NSBA123TF3T5G/NSBA143EF3T5G/NSBA114TF3T5G/

NSBA115TF3T5G

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

http://onsemi.com

NSBA114EF3T5G Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Input Resistor

NSBA114TF3T5C

NSBA114EF3T5G

NSBA124EF3T5G

NSBA144EF3T5G

NSBA114YF3T5TG

NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

NSBA115TF3T5G

7.0

15.4

32.9

7.0

1.5

3.3

2.2

4.7

2.2

28.6

61.1

2.9

6.1

1.54

32.9

2.86

61.1

130

100

Resistor Ratio

R /R

1 2

NSBA114EF3T5G/NSBA124EF3T5G/

NSBA144EF3T5G/NSBA143EF3T5G

NSBA114YF3T5TG

NSBA123TF3T5G/NSBA114TF3T5G/

NSBA115TF3T5G

0.8

0.17

−

1.0

0.21

−

1.2

0.25

−

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

0.055

0.038

1.7

0.1

0.047

2.1

0.185

0.056

2.6

http://onsemi.com

NSBA114EF3T5G Series

TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EF3T5G

1.0

0.10

0.01

1000

I /I = 10

= 10 V

T = 25°C

100

T = 150°C

150°C

25°C

−55°C

T = −55°C

1.0

10 15 20 25 30 35 40 45 50

0.1

100

I , COLLECTOR CURRENT (mA)

Figure 1. V_CE(sat)vs. I_C

Figure 2. DC Current Gain

100

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

150°C

1.0

−55°C

0.1

25°C

0.01

10 15 20 25 30 35 40 45 50

REVERSE BIAS VOLTAGE (V)

V , INPUT VOLTAGE (V)

Figure 3. Output Capacitance

Figure 4. Output Current vs. Input Voltage

25°C

−55°C

1.0

150°C

0.1

10 15 20 25 30 35 40 45 50

I , COLLECTOR CURRENT (mA)

Figure 5. Input Voltage vs. Output Current

http://onsemi.com

NSBA114EF3T5G Series

PACKAGE DIMENSIONS

SOT−1123

CASE 524AA−01

ISSUE B

NOTES:

−X−

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

−Y−

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX MIN

INCHES

NOM MAX

0.08 (0.0032) X Y

0.34

0.15

0.37

0.22

0.15

0.12

0.80

0.60

−−−

1.00

0.10

0.40

0.28

0.20

0.17

0.85

0.65

0.40

1.05

0.15

0.013 0.015 0.016

0.006 0.009 0.011

0.004 0.006 0.008

0.003 0.005 0.007

0.030 0.031 0.033

0.022 0.024 0.026

0.014 −−−− 0.016

0.037 0.039 0.041

0.002 0.004 0.006

b1 0.10

0.07

0.75

0.55

0.35

0.95

0.05

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOLDERING FOOTPRINT*

0.35

0.30

0.25

0.90

0.40

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,

affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury

or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an

Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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Order Literature: http://www.onsemi.com/orderlit

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NSBA114EF3/D

http://onsemi.com

NSBA115TF3T5G [ONSEMI]

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