NSBA123EDXV6T1 [ONSEMI]
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN;
| 型号： | NSBA123EDXV6T1 |
| 厂家： | 
ONSEMI |
| 描述： | 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSBA114EDXV6T1,
NSBA114EDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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(3)
(2)
(1)
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low−power surface mount applications where board space is
at a premium.
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• Lead Free Solder Plating
4
5
6
3
2
1
SOT−563
CASE 463A
PLASTIC
MAXIMUM RATINGS
(T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
MARKING DIAGRAM
Rating
Symbol
Value
Unit
Vdc
Collector-Base Voltage
V
V
−50
−50
CBO
CEO
xx D
Collector-Emitter Voltage
Collector Current
Vdc
I
C
−100
mAdc
xx = Specific Device Code
(see table on page 2)
THERMAL CHARACTERISTICS
D
= Date Code
Characteristic
(One Junction Heated)
Symbol
Max
Unit
ORDERING INFORMATION
Total Device Dissipation
T = 25°C
P
357
(Note 1)
2.9
mW
A
D
Device
Package
Shipping
Derate above 25°C
mW/°C
°C/W
(Note 1)
NSBA114EDXV6T1 SOT−563
4 mm pitch
4000/Tape & Reel
Thermal Resistance Junction-to-Ambient
R
350
q
JA
(Note 1)
NSBA114EDXV6T5 SOT−563
2 mm pitch
Characteristic
8000/Tape & Reel
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T = 25°C
P
500
(Note 1)
4.0
mW
A
D
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Derate above 25°C
mW/°C
°C/W
°C
(Note 1)
Thermal Resistance Junction-to-Ambient
R
250
(Note 1)
q
JA
Preferred devices are recommended choices for future use
and best overall value.
Junction and Storage
Temperature Range
T , T
J
−55 to
+150
stg
1. FR−4 @ Minimum Pad
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
January, 2004 − Rev. 3
NSBA114EDXV6/D
NSBA114EDXV6T1, NSBA114EDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device
NSBA114EDXV6T1
Package
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
0A
R1 (kW)
10
R2 (kW)
10
NSBA124EDXV6T1
0B
22
22
NSBA144EDXV6T1
0C
47
47
NSBA114YDXV6T1
0D
10
47
NSBA114TDXV6T1 (Notes 2)
NSBA143TDXV6T1 (Notes 2)
NSBA113EDXV6T1 (Notes 2)
NSBA123EDXV6T1 (Notes 2)
NSBA143EDXV6T1 (Notes 2)
NSBA143ZDXV6T1 (Notes 2)
NSBA124XDXV6T1 (Notes 2)
NSBA123JDXV6T1 (Notes 2)
NSBA115EDXV6T1 (Notes 2)
NSBA144WDXV6T1 (Notes 2)
0E
10
∞
0F
4.7
1.0
2.2
4.7
4.7
22
∞
0G
0H
1.0
2.2
4.7
47
0J
0K
0L
47
0M
0N
2.2
100
47
47
100
22
0P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = −50 V, I = 0)
I
I
−
−
−
−
−100
−500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = −50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = −6.0 V, I = 0)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
EBO
EB
C
Collector-Base Breakdown Voltage (I = −10 mA, I = 0)
V
V
−50
−50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 3) (I = −2.0 mA, I = 0)
C
B
(BR)CEO
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage (I = −10 mA, I = −0.3 mA)
V
CE(sat)
−
−
−0.25
Vdc
C
E
(I = −10 mA, I = −5 mA)
NSBA113EDXV6T1/NSBA123EDXV6T1
NSBA114TDXV6T1/NSBA143TDXV6T1
C
B
(I = −10 mA, I = −1 mA)
C
B
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
NSBA114EDXV6T1, NSBA114EDXV6T5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (continued)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 3) (continued)
DC Current Gain
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = −10 V, I = −5.0 mA)
100
140
140
250
250
5.0
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
80
15
27
140
130
140
130
140
Output Voltage (on)
(V = −5.0 V, V = −2.5 V, R = 1.0 kW)
V
OL
Vdc
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144EDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
CC
B
L
(V = −5.0 V, V = −3.5 V, R = 1.0 kW)
CC
B
L
(V = −5.0 V, V = −5.5 V, R = 1.0 kW)
CC
B
L
(V = −5.0 V, V = −4.0 V, R = 1.0 kW)
CC
B
L
Output Voltage (off) (V = −5.0 V, V = −0.5 V, R = 1.0 kW)
V
OH
−4.9
−
−
Vdc
CC
B
L
(V = −5.0 V, V = −0.05 V, R = 1.0 kW)
NSBA113EDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA123EDXV6T1
NSBA143ZDXV6T1
CC
B
L
(V = −5.0 V, V = −0.25 V, R = 1.0 kW)
CC
B
L
Input Resistor
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
R
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k W
1
15.4
1.54
70
NSBA144WDXV6T1
32.9
Resistor Ratio
NSBA114EDXV6T1/NSBA124EDXV6T1/
NSBA144EDXV6T1/NSBA115EDXV6T1
NSBA114YDXV6T1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.2
0.25
−
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1
0.8
1.0
0.1
0.47
0.047
2.1
1.2
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144WDXV6T1
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
NSBA114EDXV6T1, NSBA114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
ALL NSBA114EDXV6T1 SERIES DEVICES
— NSBA114EDXV6T1
1
300
250
200
150
100
I /I = 10
C B
T ꢁ=ꢁ−25°C
A
ꢀ0.1
25°C
75°C
R
= 490°C/W
50
0
q
JA
ꢀ0.01
ꢀ20
−50
0
50
100
150
0
ꢀ40
50
T , AMBIENT TEMPERATURE (°C)
A
I , COLLECTOR CURRENT (mA)
C
Figure 1. Derating Curve − ALL DEVICES
Figure 2. VCE(sat) versus IC
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
1000
4
V
CE
= 10 V
f = 1 MHz
l = 0 V
E
T = 25°C
A
3
T ꢁ=ꢁ75°C
A
25°C
−25°C
100
2
1
0
10
1
10
100
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
100
25°C
75°C
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
ꢀ0.1
1
ꢀ0.01
V
O
= 5 V
ꢀ0.1
ꢀ0.001
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , INPUT VOLTAGE (VOLTS)
in
I , COLLECTOR CURRENT (mA)
C
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
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4
NSBA114EDXV6T1, NSBA114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1
1000
10
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
75°C
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
ꢀ40
ꢀ50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
T ꢁ=ꢁ−25°C
A
l = 0 V
E
10
1
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V
O
= 5 V
ꢀ9
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1
1
1000
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢀ0.1
ꢀ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V
= 5 V
ꢀ5
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
CE
= 10 V
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
A
25°C
l = 0 V
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
V
O
= 5 V
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
O
= 0.2 V
25°C
T ꢁ=ꢁ−25°C
A
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1
1000
T = 25°C
A
V
CE
= 10 V
V
CE
= 5.0 V
100
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 22. DC Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1
1000
T = 25°C
A
V
CE
= 10 V
V
CE
= 5.0 V
100
1.0
10
I , COLLECTOR CURRENT (mA)
100
C
Figure 23. DC Current Gain
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NSBA114EDXV6T1, NSBA114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 24. Maximum Collector Voltage versus
Collector Current
Figure 25. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
E
= 0 V
T = −25°C
A
T = 25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 26. Output Capacitance
Figure 27. Output Current versus Input Voltage
100
T = −25°C
A
25°C
10
V
O
= 0.2 V
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 28. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
25°C
25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
E
= 0 V
T = −25°C
A
T = 25°C
A
25°C
0.1
0.01
V
O
= 5 V
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 31. Output Capacitance
Figure 32. Output Current versus Input Voltage
100
V
O
= 0.2 V
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 33. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
C
−X−
K
6
5
2
4
3
MILLIMETERS
DIM MIN MAX
INCHES
B
−Y−
MIN
MAX
0.067
0.051
0.024
0.011
S
A
B
C
D
G
J
1.50
1.10
0.50
0.17
1.70 0.059
1.30 0.043
0.60 0.020
0.27 0.007
1
0.50 BSC
0.020 BSC
D 56 PL
J
0.08
0.10
1.50
0.18 0.003
0.30 0.004
1.70 0.059
0.007
0.012
0.067
G
M
0.08 (0.003)
X Y
K
S
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
STYLE 2:
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
STYLE 4:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. COLLECTOR 1
6. ANODE/ANODE 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5 0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
NSBA114EDXV6T1, NSBA114EDXV6T5
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
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Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NSBA114EDXV6/D
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