NSM3005NZTAG [ONSEMI]
N 沟道 MOSFET，20 V，224 mA，带小信号 PNP BJT，30 V，500 mA;
| 型号： | NSM3005NZTAG |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 MOSFET，20 V，224 mA，带小信号 PNP BJT，30 V，500 mA |
| 文件： | 总7页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MARKING
DIAGRAM
Small Signal BJT and
MOSFET
30 V, 500 mA, PNP BJT with 20 V, 224 mA,
N−Channel MOSFET
1
UDFN6
CASE 517AT
mCOOLt
6
AE MG
G
1
AE= Specific Device Code
M = Date Code
NSM3005NZ
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
Features
upon manufacturing location.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
Typical Applications
• Portable Devices
Q1 MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Symbol
Value
30
Unit
V
V
CEO
V
CBO
V
EBO
40
V
5.0
500
50
V
I
C
mA
mA
Base Current
I
B
Pin 1
Pin 6
BJT
Emitter
BJT
Collector
Q2 MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
BJT
Collector
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
V
Value
20
Unit
V
Pin 5
MOSFET
Gate
Pin 2
BJT
Base
DSS
V
GS
8
V
MOSFET
Drain
Pin 3
MOSFET
Drain
Continuous Drain
Current (Note 1)
Steady
T = 25°C
I
224
162
241
673
120
mA
Pin 4
MOSFET
Source
A
D
State
T = 85°C
A
t ≤ 5 s
T = 25°C
A
Bottom View
Pulsed Drain Current
T = 10 ms
p
I
mA
mA
DM
Source Current (Body Diode)
I
S
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Parameter
†
Device
Package
Shipping
Symbol
Value
Unit
NSM3005NZTAG
UDFN6
(Pb−Free)
3000 / Tape &
Reel
Thermal Resistance
Junction−to−Ambient (Note 1)
R
245
0.8
°C/W
q
JA
Total Power Dissipation @ T = 25°C
P
D
W
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Operating Junction and Storage
Temperature
T , T
J
−55 to
150
°C
°C
STG
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2023 − Rev. 4
NSM3005NZ/D
NSM3005NZ
Q1 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter– Base Breakdown Voltage
Collector Cutoff Current
Symbol
Test Condition
Min
Typ
Max
Unit
V
I
I
= 100 mA
= 10 mA
= 100 mA
40
30
5.0
−
−
−
−
−
−
−
−
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
V
V
I
C
E
−
V
I
V
= 25 V, I = 0 A
1.0
10
mA
mA
CBO
CB
E
Emitter Cutoff Current
I
V
= 5.0 V, I = 0 A
−
EBO
EB
C
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
V
= 3.0 V, I = 30 mA
20
20
20
−
−
−
−
−
−
−
100
100
100
0.4
1.1
1.0
FE
CE
C
V
CE
V
CE
= 3.0 V, I = 100 mA
C
= 3.0 V, I = 500 mA
C
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter Turn–On Voltage
V
I
= 500 mA, I = 50 mA
V
V
V
CE(sat)
C
C
B
V
I
= 500 mA, I = 50 mA
−
BE(sat)
B
V
V
CE
= 1.0 V, I = 500 mA
−
BE(on)
C
Q2 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
20
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = −250 µA, ref to 25°C
D
−
19
mV/°C
(BR)DSS
J
Zero Gate Votlage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
GS
= 0 V, V = 16 V, T = 25°C
−
−
−
−
1.0
2.0
mA
mA
DSS
DS
J
I
V
DS
= 0 V, V
=
8.0 V
GSS
GS
V
V
GS
= V , I = 250 mA
0.4
−
−
1.0
−
V
mV/°C
W
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
−
1.9
GS(TH)
R
V
GS
= 4.5 V, I = 100 mA
−
0.65
0.9
1.4
1.9
2.2
4.3
−
DS(ON)
D
V
GS
V
GS
V
GS
= 2.5 V, I = 50 mA
−
D
= 1.8 V, I = 20 mA
−
1.1
D
= 1.5 V, I = 10 mA
1.4
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
DS
= 5.0 V, I = 100 mA
−
0.56
S
FS
D
C
f = 1.0 MHz, V = 0 V,
−
−
−
−
−
−
−
15.8
3.5
−
−
−
−
−
−
−
pF
ISS
GS
= 15 V
V
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
2.4
Q
V
GS
= 4.5 V, V = 15 V;
D
0.70
0.05
0.14
0.10
nC
ns
V
G(TOT)
DS
I
= 200 mA
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
V
= 4.5 V, V = 15 V,
−
−
−
−
18
35
−
−
−
−
d(ON)
GS
D
DD
I
= 200 mA, R = 2 W
G
t
r
Turn−Off Delay Time
Fall Time
T
d(ON)
201
110
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
GS
= 0 V, I = 10 mA
−
0.55
1.0
SD
S
2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NSM3005NZ
TYPICAL CHARACTERISTICS − Q1
1000
1
V
CE
= 3 V
I /I = 10
C
B
T = 150°C
J
T = 25°C
100
10
0.1
J
T = 150°C
J
T = −55°C
J
T = 25°C
J
T = −55°C
J
0.01
0.1
1
10
100
1000
1
10
100
1000
1000
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. PNP DC Current Gain vs. Collector
Current
Figure 2. PNP VCE vs. IC
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
T = −55°C
J
T = −55°C
J
T = 25°C
J
T = 25°C
J
T = 150°C
J
T = 150°C
J
0.3
0.2
V
CE
= 1 V
0.2
0.1
1
10
100
1000
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. PNP VBE(sat) vs. IC
Figure 4. PNP VBE(on) vs. IC
1.0
1000
100
0.9
0.8
0.7
C
ibo
0.6
0.5
0.4
0.3
0.2
C
obo
10
1
500 mA
300 mA
10 mA
100 mA
I
= 1.0 mA
C
0.1
0
0.01
0.1
1
10
100
0.1
1
10
I , BASE CURRENT (mA)
B
V , REVERSE VOLTAGE (V)
R
Figure 5. PNP VCE vs. IB
Figure 6. PNP Capacitance
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3
NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.9
T = −55°C
3.0 V
3.5 V
4.0 V
4.5 V
V
GS
= 2.5 V
J
V
DS
= 5 V
2.0 V
1.8 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T = 25°C
J
T = 125°C
J
1.5 V
1.2 V
0.1
0
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
2
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 7. On−Region Characteristics
Figure 8. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
5.0
4.5
T = 25°C
J
T = 25°C
I
J
= 0.1 A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
D
V
= 1.5 V
GS
2.5
2.0
1.5
1.0
V
GS
= 1.8 V
V
= 2.5 V
GS
0.5
0
0.5
0
V
= 4.5 V
GS
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
GS
Figure 9. On−Resistance vs. Gate−to−Source
Figure 10. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
1.8
1000
100
V
GS
= 4.5 V
= 100 mA
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
I
D
T = 125°C
J
V
I
= 1.8 V
GS
= 20 mA
D
T = 85°C
J
10
1
0.8
0.7
−50
4
6
8
10
12
14
16
18
20
−25
0
25
50
75
100 125 150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. On−Resistance Variation with
Figure 12. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
30
25
20
15
10
5
18
15
12
Q
T
V
= 0 V
GS
T = 25°C
J
4
3
2
f = 1 MHz
V
V
GS
DS
C
iss
9
6
Q
Q
GD
GS
V
= 15 V
DS
C
oss
1
0
T = 25°C
J
5
0
3
0
I
D
= 0.2 A
C
rss
0
2
4
6
8
10 12
14 16 18 20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7 0.8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 13. Capacitance Variation
Figure 14. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
10
V
GS
V
DD
= 4.5 V
= 15 V
T = 125°C
J
T = 25°C
J
t
d(off)
1
t
f
100
10
T = −55°C
J
0.1
t
r
t
d(on)
0.01
1
10
R , GATE RESISTANCE (W)
100
0.4 0.5 0.6
0.7 0.8 0.9
1.0 1.1 1.2 1.3
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 15. Resistive Switching Time Variation
vs. Gate Resistance
Figure 16. Diode Forward Voltage vs. Current
0.85
0.75
0.65
0.55
I
D
= 250 mA
0.45
0.35
−50 −25
0
25
50
75
100
125
150
T , TEMPERATURE (°C)
J
Figure 17. Threshold Voltage
mCOOL is a trademark of Semiconductor Components Industries, LLC.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AT
6
ISSUE O
1
DATE 02 SEP 2008
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
B
2X
L
0.10
C
L1
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DETAIL A
OPTIONAL
CONSTRUCTION
PIN ONE
E
REFERENCE
MILLIMETERS
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
2X
A
0.10
C
MOLD CMPD
EXPOSED Cu
A3
b
D
E
0.13 REF
0.20
1.60 BSC
1.60 BSC
0.50 BSC
TOP VIEW
0.30
A3
A
(A3)
e
DETAIL B
D1 1.14
D2 0.38
E1 0.54
1.34
0.58
0.74
−−−
0.35
0.10
0.05
0.05
C
C
A1
DETAIL B
K
L
L1
0.20
0.15
−−−
OPTIONAL
6X
CONSTRUCTION
SIDE VIEW
SEATING
PLANE
C
A1
GENERIC
MARKING DIAGRAM*
D1
DETAIL A
6X K
2X
D2
E1
1
3
1
XX MG
G
XX= Specific Device Code
M = Date Code
6
4
6X b
6X L
G
= Pb−Free Package
(Note: Microdot may be in either location)
0.10
0.05
C A B
e
NOTE 3
C
BOTTOM VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
1.34
2X
0.58
6X
0.48
0.74 1.90
1
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON32372E
UDFN6, 1.6X1.6, 0.5P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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onsemi,
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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