NSM6056MT1G [ONSEMI]
NPN 晶体管，带齐纳二极管;
| 型号： | NSM6056MT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 晶体管，带齐纳二极管 开关 光电二极管 晶体管 齐纳二极管 |
| 文件： | 总6页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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NPN Transistor with Zener
Diode
NPN Transistor with
Zener Diode
NSM6056MT1G
6
1
5
2
4
PINOUT:
PIN 1. ANODE
2. BASE
3. COLLECTOR
4. EMITTER
5. NC/COLLECTOR
6. CATHODE
Features
Z1
Q1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
Typical Applications
• Driving Circuit
• Switching Applications
4
5
6
SC−74
CASE 318F
3
2
MAXIMUM RATINGS − NPN TRANSISTOR
1
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
40
Unit
V
V
CEO
V
CBO
V
EBO
MARKING DIAGRAM
60
V
6.0
V
M60MG
Collector Current − Continuous
Collector Current − Peak
I
600
900
mA
mA
C
G
I
CM
MAXIMUM RATINGS − ZENER DIODE
M60 = Device Code
M
G
= Date Code*
= Pb−Free Package
Rating
Symbol
Value
Unit
Forward Voltage @ I = 10 mA
V
F
0.9
V
F
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
ORDERING INFORMATION
(Note 1) @ T = 25°C
380
328
mW
A
†
Device
Package
Shipping
Thermal Resistance from
R
°C/W
q
JA
Junction−to−Ambient
NSM6056MT1G
SC−74
3000/Tape & Reel
Junction and Storage
Temperature Range
T , T
−55 to +150
°C
(Pb−Free)
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
June, 2023 − Rev. 1
NSM6056M/D
NSM6056MT1G
NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
(I = 1.0 mAdc, I = 0)
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I = 0.1 mAdc, I = 0)
V
V
C
E
(I = 0.1 mAdc, I = 0)
−
Vdc
E
C
(V = 35 Vdc, V = 0.4 Vdc)
I
0.1
0.1
mAdc
mAdc
CE
EB
BEV
Collector Cutoff Current
(V = 35 Vdc, V = 0.4 Vdc)
I
−
CE
EB
CEX
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
(I = 0.1 mAdc, V = 1.0 Vdc)
20
40
−
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
80
−
C
CE
(I = 150 mAdc, V = 1.0 Vdc)
100
40
300
−
C
CE
(I = 500 mAdc, V = 2.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I = 150 mAdc, I = 15 mAdc)
−
−
0.4
C
B
(I = 500 mAdc, I = 50 mAdc)
0.75
C
B
V
BE(sat)
(I = 150 mAdc, I = 15 mAdc)
0.75
−
0.95
1.2
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
(I = 20 mAdc, V = 10 Vdc, f = 100 MHz)
f
T
250
−
−
MHz
pF
C
CE
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
cb
C
eb
6.5
30
CB
E
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
−
pF
EB
C
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
1.0
0.1
40
1.0
15
kW
C
CE
ie
re
fe
−4
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
h
8.0
500
30
X 10
−
C
CE
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
oe
mmhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
15
20
d
(V = 30 Vdc, V = 2.0 Vdc,
CC
EB
ns
ns
I
= 150 mAdc, I = 15 mAdc)
C
B1
Rise Time
t
r
Storage Time
t
225
30
s
(V = 30 Vdc, I = 150 mAdc,
CC
C
I
B1
= I = 15 mAdc)
B2
Fall Time
t
f
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ZENER DIODE − ELECTRICAL CHARACTERISTICS (V = 0.9 Max @ I = 10 mA for all types)
F
F
Z
ZT
Max
IR @ VR
d
@ I
/dt (mV/k)
VZ
I = IZT
Z
I
Z
Z
ZK
= 5 mA
Zener Voltage VZ
ZT1
@ 10%
Mod W
Max
Test
Current
Izt mA
C pF Max @
= 0.5
mA W
Max
V = 0
R
Min
Max
mA
1.0
V
Min
Max
f = 1 MHz
Device
NSM6056MT1G
5.0
5.49
5.73
200
40
2.0
−2.0
2.5
200
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2
NSM6056MT1G
TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR
500
450
400
350
300
250
200
150
100
V
CE
V
CE
V
CE
= 5.0 V
= 2.0 V
= 1.0 V
T = 150°C
J
25°C
-ꢀ55°C
50
0
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
1.2
1.0
0.8
0.6
0.4
0.2
0
100 mA
I = 1.0 mA
C
500 mA
10 mA
300 mA
0.001
0.01
0.1
1
10
100
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
0.35
0.30
0.25
0.20
I /I = 10
C B
150°C
0.15
0.10
25°C
-55°C
0.05
0
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector−Emitter Saturation Voltage
vs. Collector Current
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3
NSM6056MT1G
TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.0
I /I = 10
C
B
V
CE
= 2.0 V
0.9
0.8
0.7
0.6
0.5
−55°C
−55°C
25°C
25°C
150°C
0.4
0.3
0.4
0.3
150°C
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Base−Emitter Saturation Voltage vs.
Figure 5. Base−Emitter Turn On Voltage vs.
Collector Current
Collector Current
1000
V
CE
= 1.0 V
T = 25°C
A
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 6. Current−Gain−Bandwidth Product
TYPICAL ELECTRICAL CHARACTERISTICS − ZENER DIODE
1000
100
150°C
10
75°C 25°C
0.5 0.6
0°C
0.8
1.0
0.4
0.7
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Figure 7. Typical Forward Voltage
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74
CASE 318F
ISSUE P
6
1
DATE 07 OCT 2021
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
XXX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
STYLE 4:
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
STYLE 6:
PIN 1. CATHODE
2. ANODE
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
3. CATHODE
4. CATHODE
5. ANODE
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. NO CONNECTION
5. COLLECTOR
6. BASE
6. CATHODE
6. COLLECTOR 1
STYLE 10:
STYLE 11:
PIN 1. EMITTER
2. BASE
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
3. ANODE/CATHODE
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
4. COLLECTOR
5. ANODE
4. ANODE
5. CATHODE
6. CATHODE
6. COLLECTOR
6. DRAIN 1
6. COLLECTOR 1
6. COLLECTOR 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42973B
SC−74
PAGE 1 OF 1
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