NSPM1042MUTBG [ONSEMI]
ESD & Surge Protection Device, 4.8 V, 200 A capable;
| 型号： | NSPM1042MUTBG |
| 厂家： | 
ONSEMI |
| 描述： | ESD & Surge Protection Device, 4.8 V, 200 A capable |
| 文件： | 总8页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSPM1042
ESD and Surge Protection
Diode
Features
• Protection for the following IEC Standards:
IEC61000−4−2 Level 4: 30 kV Contact Discharge
IEC61000−4−5 (Lightning) 200 A (8/20 ms)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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Pin 1
Pin 2
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Symbol
Value
Unit
MARKING
DIAGRAM
Contact
Air
30
30
kV
Operating Junction and Storage
Temperature Range
T , T
−65 to +150
°C
J
stg
N3M
UDFN2
CASE 517DF
Maximum Peak Pulse Current
I
PP
200
A
8/20 ms @ T = 25°C, Pin 2 to Pin 1
A
N3
M
= Specific Device Code
= Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
NSPM1042MUTBG
Package
Shipping
UDFN2
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2019 − Rev. 0
NSPM1042/D
NSPM1042
ELECTRICAL CHARACTERISTICS
A
I
(T = 25°C unless otherwise noted)
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
R
V
PP
DYN
I
T
V
Clamping Voltage @ I
I
V
R
BR RWM
V
C
V
C
PP
V
I
V
V
R
T
RWM BR
C
V
Working Peak Reverse Voltage
RWM
I
I
R
Maximum Reverse Leakage Current @ V
R
RWM
DYN
V
Breakdown Voltage @ I
Test Current
BR
T
I
PP
I
T
Bi−Directional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
Typ
Max
3.3
4.8
5.5
6.0
0.1
0.1
7.2
8.4
9.1
9.5
Unit
V
Reverse Working Voltage
Reverse Working Voltage
Breakdown Voltage
V
RWM
V
RWM
Pin 1 to Pin 2
Pin 2 to Pin 1
V
V
I = 1 mA, Pin 1 to Pin 2
4.5
5.0
4.7
5.4
V
BR
BR
T
Breakdown Voltage
V
I = 1 mA, Pin 2 to Pin 1
V
T
Reverse Leakage Current
Reverse Leakage Current
Clamping Voltage (Note 1)
Clamping Voltage (Note 1)
Clamping Voltage (Note 1)
Clamping Voltage (Note 1)
I
R
V
RWM
V
RWM
= 3.3 V, Pin 1 to Pin 2
= 4.8 V, Pin 2 to Pin 1
0.05
0.05
6.6
mA
mA
V
I
R
V
C
V
C
V
C
V
C
V
C
I
PP
I
PP
I
PP
I
PP
I
PP
= 100 A, t = 8 x 20 ms, Pin 2 to Pin 1
p
= 150 A, t = 8 x 20 ms, Pin 2 to Pin 1
7.6
V
p
= 180 A, t = 8 x 20 ms, Pin 2 to Pin 1
8.2
V
p
= 200 A, t = 8 x 20 ms, Pin 2 to Pin 1
8.8
V
p
Clamping Voltage TLP
(Note 2)
5.48
V
= 8 A
IEC 61000−4−2 Level 2 equivalent
( 4 kV Contact, 8 kV Air)
I
PP
= 16 A
5.55
IEC 61000−4−2 Level 4 equivalent
( 8 kV Contact, 16 kV Air)
Dynamic Resistance
Dynamic Resistance
Junction Capacitance
R
R
TLP Pulse, Pin 1 to Pin 2
TLP Pulse, Pin 2 to Pin 1
0.014
0.01
300
W
W
DYN
DYN
C
V
R
= 0 V, f = 1 MHz
480
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.
A
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z = 50 W, t = 100 ns, t = 1 ns, averaging window; t = 70 ns to t = 90 ns.
0
p
r
1
2
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2
NSPM1042
TYPICAL CHARACTERISTICS
45
40
35
30
25
20
15
10
5
10
5
0
−5
−10
−15
−20
−25
−30
0
−5
−35
−40
−10
−45
−20
0
20
40
60
80
100
120
−20
0
20
40
60
80
100 120
TIME (ns)
TIME (ns)
Figure 1. ESD Clamping Voltage Pin 1 to Pin 2,
Figure 2. ESD Clamping Voltage Pin 2 to Pin 1,
8 kV Contact per IEC61000−4−2
8 kV Contact per IEC61000−4−2
20
20
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V , VOLTAGE (V)
C
V , VOLTAGE (V)
C
Figure 3. 100 ns TLP I−V Curve, Pin 1 to Pin 2
Figure 4. 100 ns TLP I−V Curve, Pin 2 to Pin 1
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
20 40 60 80 100 120 140 160 180 200 220 240
(A)
0
20 40 60 80 100 120 140 160 180 200 220 240
(A)
I
pk
I
pk
Figure 5. Clamping Voltage vs. Peak Pulse
Figure 6. Clamping Voltage vs. Peak Pulse
Current (tp = 8/20 ms), Pin 1 to Pin 2
Current (tp = 8/20 ms), Pin 2 to Pin 1
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3
NSPM1042
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
0
−5 −4 −3 −2 −1
0
1
2
3
4
5
V
Bias
(V)
Figure 7. CV Characteristics
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4
NSPM1042
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 8. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 9 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 8. Simplified Schematic of a Typical TLP
System
Figure 9. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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5
NSPM1042
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 10. IEC61000−4−2 Spec
Device
Under
Test
Oscilloscope
ESD Gun
50 W
Cable
50 W
Figure 11. Diagram of ESD Test Setup
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 12. 8 x 20 ms Pulse Waveform
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN2 2.0x1.25, 1.3P
CASE 517DF
ISSUE A
SCALE 4:1
DATE 06 JUL 2016
A
B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN 1
INDICATOR
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
E
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
1.05
A
2X
0.08
C
b
D
E
e
0.95
2.00 BSC
1.25 BSC
1.30 BSC
2X
0.08 C
TOP VIEW
L
0.45
0.55
A
0.05
0.05
C
C
GENERIC
MARKING DIAGRAMS*
A1
SEATING
PLANE
C
XXM
XXM
SIDE VIEW
e
Style 1
Style 2
XX
M
= Specific Device Code
= Date Code
e/2
0.05 C A B
STYLE 1:
PIN 1. CATHODE
(POLARITY BAND)
2. ANODE
STYLE 2:
.
NO POLARITY
b
1
2X
L
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
1.10
2.10
1
2X
0.70
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04628G
UDFN2 2.0X1.25, 1.3P
PAGE 1 OF 1
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