NSQA6V8AW5T2_09 [ONSEMI]
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage; 瞬态电压抑制器ESD保护二极管钳位电压低
| 型号： | NSQA6V8AW5T2_09 |
| 厂家： | 
ONSEMI |
| 描述： | Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSQA6V8AW5T2 Series
Transient Voltage Suppressor
ESD Protection Diode with Low Clamping
Voltage
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a premium.
Features
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1
2
3
5
4
• Low Clamping Voltage
• Small SC−88A SMT Package
• Stand Off Voltage: 5 V
• Low Leakage Current < 1 mA
• Four Separate Unidirectional Configurations for Protection
• ESD Protection: IEC61000−4−2: Level 4
MILSTD 883C − Method 3015−6: Class 3
• Pb−Free Packages are Available
SC−88A/SOT−323
Benefits
CASE 419A
• Provides Protection for ESD Industry Standards: IEC 61000, HBM
• Minimize Power Consumption of the System
MARKING DIAGRAM
• Minimize PCB Board Space
4
5
Typical Applications
• Instrumentation Equipment
6x MG
G
• Serial and Parallel Ports
1
2
3
• Microprocessor Based Equipment
• Notebooks, Desktops, Servers
• Cellular and Portable Equipment
x
= H for NSQA6V8AW5T2
X for NSQA12VAW5T2
= Date Code
M
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
= Pb−Free Package
Rating
Symbol
Value
Unit
(Note: Microdot may be in either location)
Peak Power Dissipation
8 20 msec Double Exponential
Waveform (Note 1)
P
PK
20
W
Steady State Power − 1 Diode (Note
2)
P
D
380
mW
ORDERING INFORMATION
†
Thermal Resistance −
Junction−to−Ambient
Above 25°C, Derate
R
q
JA
Device
Package
Shipping
327
3.05
°C/W
mW/°C
NSQA6V8AW5T2
SC−88A 3000/Tape & Reel
Operating Junction Temperature
Range
T
−40 to +125
°C
J
NSQA6V8AW5T2G SC−88A 3000/Tape & Reel
(Pb−Free)
Storage Temperature Range
T
−55 to +150
°C
°C
stg
NSQA12VAW5T2
SC−88A 3000/Tape & Reel
Lead Solder Temperature − Maximum
T
260
L
10 Seconds Duration
NSQA12VAW5T2G SC−88A 3000/Tape & Reel
(Pb−Free)
IEC ^1000−4−2 (ESD)
Contact
$8.0
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Non−repetitive current pulse per Figure 6.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2. Only 1 diode under power. For all 4 diodes under power, P will be 25%.
D
Mounted on FR4 board with min pad.
See Application Note AND8308/D for further description of survivability specs.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
September, 2009 − Rev. 5
NSQA6V8AW5T2/D
NSQA6V8AW5T2 Series
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
A
I
F
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
PP
V
C
PP
V
C
V V
BR RWM
V
Working Peak Reverse Voltage
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
F
I
Forward Current
I
PP
V
F
Forward Voltage @ I
F
Uni−Directional
P
Peak Power Dissipation
Capacitance @ V = 0 and f = 1.0 MHz
pk
C
R
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
NSQA6V8AW5T2
Breakdown Voltage (I = 1 mA) (Note 3)
V
6.4
6.8
−
7.1
1.0
13
V
mA
V
T
BR
Leakage Current (V
= 5.0 V)
I
−
−
−
RWM
R
Clamping Voltage 1 (I = 1.6 A) (Note 4)
V
−
PP
C
Maximum Peak Pulse Current (Note 4)
I
PP
−
1.6
A
Junction Capacitance− (V = 0 V, f = 1 MHz)
C
J
−
−
12
6.7
15
9.5
pF
R
− (V = 3.0 V, f = 1 MHz)
R
Clamping Voltage − Per IEC61000−4−2
NSQA12VAW5T2
Breakdown Voltage (I = 5 mA) (Note 3)
V
Figures 1 and 2
V
C
V
BR
11.4
−
12.0
12.7
0.05
30
V
mA
W
V
T
Leakage Current (V
= 9.0 V)
I
R
−
RWM
Zener Impedence (I = 5 mA)
Z
−
−
T
Z
Clamping Voltage 1 (I = 0.9 A) (Note 4)
V
C
−
−
23
PP
Maximum Peak Pulse Current (Note 4)
I
−
−
0.9
15
A
PP
Junction Capacitance− (V = 0 V, f = 1 MHz)
C
−
−
pF
V
R
J
Clamping Voltage − Per IEC61000−4−2 (Note 5)
V
Figures 1 and 2
C
3. V is measured at pulse test current I .
BR
T
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
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2
NSQA6V8AW5T2 Series
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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3
NSQA6V8AW5T2 Series
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
Test
Voltage
(kV)
First Peak
Current
(A)
100%
90%
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
Oscilloscope
ESD Gun
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 5. 8 X 20 ms Pulse Waveform
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4
NSQA6V8AW5T2 Series
100
110
100
90
80
70
60
50
40
30
20
10
10
0
1
0
25
50
75
100
125
150
1
10
100
1000
t, TIME (ms)
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Power Derating Curve
Figure 6. Pulse Width
0.16
0.14
0.12
0.10
0.08
0.06
0.04
14
12
10
8
T = 25°C
A
6 V
6
4
12 V
2
0
0.02
0
−60 −40 −20
0
20
40
60
80
100
0
1
2
3
4
5
6
T, TEMPERATURE (°C)
BIAS VOLTAGE (V)
Figure 8. Reverse Leakage versus
Temperature
Figure 9. Capacitance
1
0.1
0.01
T = 25°C
A
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , FORWARD VOLTAGE (V)
F
Figure 10. Forward Voltage
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5
NSQA6V8AW5T2 Series
PACKAGE DIMENSIONS
SC−88A/SOT−323/SC−70
5−LEAD PACKAGE
CASE 419A−02
ISSUE J
A
NOTES:
G
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
1
2
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
M
M
B
D 5 PL
0.2 (0.008)
0.026 BSC
0.65 BSC
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
N
K
N
S
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
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NSQA6V8AW5T2/D
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