NSR02100HT1G [ONSEMI]
肖特基势垒二极管;型号: | NSR02100HT1G |
厂家: | ONSEMI |
描述: | 肖特基势垒二极管 快速恢复二极管 测试 光电二极管 |
文件: | 总5页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NSR02100HT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
• Fast Switching Speed
• Low Leakage Current
100 VOLT SCHOTTKY
BARRIER DIODE
• Low Forward Voltage − 0.45 V @ I = 1 mAdc
F
• Surface Mount Device
• Low Capacitance Diode
• NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SOD−323
CASE 477
STYLE 1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
MAXIMUM RATINGS
CATHODE
ANODE
Characteristic
Symbol Value
Unit
Total Device Dissipation FR−5 Board,
(Note 1)
MARKING DIAGRAM
P
D
T = 25°C
200
1.57
mW
mW/°C
A
Derate above 25°C
JCM G
Forward Current (DC)
I
200
2
mA
F
G
2
1
Non−Repetitive Peak Forward Current,
t < 10 msec
p
I
A
FSM
JC
M
G
= Device Code
= Date Code
= Pb−Free Package
Thermal Resistance
Junction−to−Ambient
R
635
°C/W
°C
q
JA
Junction and Storage Temperature Range
−55
to150
T , T
J
(Note: Microdot may be in either location)
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad
ORDERING INFORMATION
†
Device
Package
Shipping
NSR02100HT1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
NSVR02100HT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2016 − Rev. 1
NSR02100HT1/D
NSR02100HT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
−
Typ
100
−
Max
−
Unit
Reverse Breakdown Voltage
(I = 10 μA)
R
V
R
V
Reverse Leakage
(V = 50 V)
R
I
R
μAdc
mAdc
Vdc
Vdc
Vdc
Vdc
pF
−
0.05
0.15
0.45
0.57
0.80
0.95
10
Reverse Leakage
(V = 100 V)
R
I
R
−
−
Forward Voltage
(I = 1 mAdc)
F
V
F
V
F
V
F
V
F
−
−
Forward Voltage
(I = 10 mAdc)
F
−
−
Forward Voltage
(I = 100 mAdc)
F
−
−
Forward Voltage
(I = 200 mAdc)
F
−
−
Total Capacitance
(V = 1.0 V, f = 1.0 MHz)
R
C
T
−
4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NSR02100HT1G
TYPICAL CHARACTERISTICS
1
0.1
−55°C
150°C
0.01
75°C
125°C
0.001
0.0001
25°C
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Voltage
1000
100
T = 150°C
A
10
T = 85°C
A
T = 125°C
1
A
0.1
T = 25°C
A
0.01
0.001
0.0001
0.00001
T = −55°C
A
10 20
30 40 50
60
70 80 90 100
V , REVERSE VOLTAGE (V)
R
Figure 2. Leakage Current
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10 20
30 40 50
60
70 80 90 100
V , REVERSE VOLTAGE (V)
R
Figure 3. Total Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
2
2
DATE 13 MAR 2007
1
1
STYLE 1
STYLE 2
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
H
D
E
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
1
E
b
2
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.00 0.031 0.035 0.040
0.10 0.000 0.002 0.004
0.006 REF
MIN
A
0.90
0.05
A1 0.00
A3
0.15 REF
0.32
A3
A
b
C
D
E
L
0.25
0.089
1.60
1.15
0.08
2.30
0.4 0.010 0.012 0.016
0.12 0.177 0.003 0.005 0.007
1.70
1.25
1.80 0.062 0.066 0.070
1.35 0.045 0.049 0.053
0.003
H
2.50
2.70 0.090 0.098 0.105
E
L
A1
C
NOTE 5
NOTE 3
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
XX M
XX M
0.63
0.025
STYLE 1
STYLE 2
0.83
0.033
XX = Specific Device Code
= Date Code
1.60
0.063
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB17533C
SOD−323
PAGE 1 OF 1
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