NSR05T30XV2T5G [ONSEMI]

肖特基势垒整流器，500 mA，40 V;


型号：	NSR05T30XV2T5G
厂家：	ONSEMI
描述：	肖特基势垒整流器，500 mA，40 V
文件：	总6页 (文件大小：129K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NSR05T30XV2

500 mA, 30 V Schottky

Barrier Diode

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in spacing saving

micro−packaging ideal for space constraint applications.

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Features

MARKING

DIAGRAM

• Low Forward Voltage Drop − 370 mV (Typ.) @ I = 500 mA

• Low Reverse Current − 52 mA (Typ.) @ V = 30 V

• 500 mA of Continuous Forward Current

• High Switching Speed

SOD−523

CASE 502

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

= Specific Device Code

Date Code

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

CATHODE

ANODE

ORDERING INFORMATION

MAXIMUM RATINGS

Device

Package

Shipping†

Rating

Symbol

Value

Unit

NSR05T30XV2T5G SOD−523

(Pb−Free)

8000 / Tape &

Reel

Reverse Voltage

Forward Current (DC)

500

3.0

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Forward Surge Current

(60 Hz @ 1 cycle)

FSM

Repetitive Peak Forward Current

1.5

FRM

(Pulse Wave = 1 sec, Duty Cycle = 66%)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

April, 2017 − Rev. 0

NSR05T30XV2/D

NSR05T30XV2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

Thermal Resistance

Junction−to−Ambient (Note 1)

Total Power Dissipation @ T = 25°C

489

250

°C/W

Thermal Resistance

Junction−to−Ambient (Note 2)

Total Power Dissipation @ T = 25°C

358

350

°C/W

Junction and Storage Temperature Range

T , T

−55 to +150

°C

stg

1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.

2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.

1000

D = 0.5

0.2

100

0.1

0.05

0.02

0.01

SINGLE PULSE

0.1

0.000001

0.00001

0.0001

0.001

0.01

0.1

100

1000

PULSE TIME (sec)

Figure 1. Thermal Response (Note 1)

1000

D = 0.5

100

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.1

0.000001

0.00001

0.0001

0.001

0.01

0.1

100

1000

PULSE TIME (sec)

Figure 2. Thermal Response (Note 2)

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NSR05T30XV2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Leakage

(V = 10 V)

110

170

(V = 30 V)

Forward Voltage

(I = 10 mA)

200

275

205

370

340

380

420

450

(I = 100 mA)

(I = 200 mA)

(I = 500 mA)

Total Capacitance

(V = 1.0 V, f = 1.0 MHz)

Reverse Recovery Time

(I = I = 10 mA, I = 1.0 mA, Figure 3)

R(REC)

Peak Forward Recovery Voltage

(I = 100 mA, t = 20 ns, Figure 4)

FRM

395

820 W

+10 V

2.0 k

0.1 mF

100 mH

10%

90%

0.1 mF

D.U.T.

= 1.0 mA

R(REC)

50 W OUTPUT

PULSE

50 W INPUT

SAMPLING

OUTPUT PULSE

(I = I = 10 mA; MEASURED

GENERATOR

OSCILLOSCOPE

INPUT SIGNAL

at i

= 1.0 mA)

R(REC)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.

Notes: 2. Input pulse is adjusted so I

is equal to 10 mA.

R(peak)

Notes: 3. t » t

Figure 3. Recovery Time Equivalent Test Circuit

FRM

Time

Figure 4. Peak Forward Recovery Voltage Definition

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NSR05T30XV2

TYPICAL CHARACTERISTICS

1000

100

150°C

125°C

100°C

85°C

25°C

150°C

125°C

100°C

0.1

0.01

0.001

85°C

−25°C

−40°C

25°C

0.0001

0.00001

−25°C

−40°C

−55°C

0.3

−55°C

0.000001

0.1

0.2

0.4

0.5

V , FORWARD VOLTAGE (V)

V , REVERSE VOLTAGE (V)

Figure 5. Forward Voltage

Figure 6. Leakage Current

10000

1000

100

1000

100

1.0

0.8

0.5

0.2

0.1

1.0

0.8

0.5

0.2

0.1

0.01

0.001

0.0001

50 100 150 200 250 300 350 400 450 500

I , FORWARD CURRENT (mA)

V , REVERSE VOLTAGE (V)

Figure 7. Average Forward Power Dissipation

Figure 8. Average Reverse Power Dissipation

140

120

100

Based on square wave currents

T = 25°C prior to surge

f = 1.0 MHz

0.001

0.01

0.1

100 1000

V , REVERSE VOLTAGE (V)

t , PULSE ON TIME (ms)

Figure 10. Forward Surge Current

Figure 9. Total Capacitance

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOD−523

CASE 502−01

ISSUE E

DATE 28 SEP 2010

STYLE 1

STYLE 2

SCALE 4:1

−X−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

−Y−

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-

TRUSIONS, OR GATE BURRS.

2X b

MILLIMETERS

0.08

X Y

DIM

MIN

0.50

0.25

0.07

1.10

0.70

1.50

NOM

0.60

0.30

0.14

1.20

0.80

1.60

0.30 REF

0.20

MAX

0.70

0.35

0.20

1.30

0.90

1.70

TOP VIEW

0.15

0.25

H_E

GENERIC

MARKING DIAGRAM*

SIDE VIEW

STYLE 1

STYLE 2

= Specific Device Code

Date Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

BOTTOM VIEW

RECOMMENDED

SOLDERING FOOTPRINT*

STYLE 1:

STYLE 2:

1.80

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

NO POLARITY

0.48

0.40

PACKAGE

OUTLINE

DIMENSION: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON11524D

SOD−523

PAGE 1 OF 1

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