NSR10404NXT5G [ONSEMI]
肖特基势垒整流器，1 A，40 V;
| 型号： | NSR10404NXT5G |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒整流器，1 A，40 V |
| 文件： | 总6页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSR10404NXT5G
1 A, 40 V, Schottky Barrier
Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
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2
MARKING
DIAGRAM
Features
• Low Forward Voltage Drop − 500 mV (Typ.) @ I = 1.0 A
F
PIN 1
• Low Reverse Current − 10 mA (Typ.) @ V = 40 V
R
1
• 1.0 A of Continuous Forward Current
4NM
DSN2
(0402)
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
CASE 152AE
4N
Y
= Specific Device Code
= Year Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
1
CATHODE
2
ANODE
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
ORDERING INFORMATION
Device
NSR10404NXT5G
Package
Shipping†
5000 / Tape & Reel
MAXIMUM RATINGS
DSN2
Rating
Symbol
Value
40
Unit
V
(Pb−Free)
Reverse Voltage
V
R
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Forward Current (DC)
Forward Surge Current
I
F
1.0
A
I
A
FSM
(60 Hz @ 1 cycle)
12
Repetitive Peak Forward Current
I
2.5
A
FRM
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating:
Human Body Model
Machine Model
ESD
> 8
> 400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2016 − Rev. 1
NSR10404/D
NSR10404NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T = 25°C
R
P
260
480
°C/W
mW
q
JA
A
D
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T = 25°C
R
P
100
1.25
°C/W
W
q
JA
A
D
Storage Temperature Range
Junction Temperature
T
−40 to +125
+150
°C
°C
stg
T
J
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
1
SINGLE PULSE
0.1
0.01
0.00000001 0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
100
D = 0.5
0.2
0.1
10
1
0.05
0.02
0.01
SINGLE PULSE
0.1
0.01
0.00000001 0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR10404NXT5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V = 10 V)
I
R
mA
−
−
1.0
10
10
40
R
(V = 40 V)
R
Forward Voltage
V
F
mV
(I = 0.1 mA)
−
−
−
−
−
150
270
345
435
500
190
300
380
460
550
F
(I = 10 mA)
F
(I = 100 mA)
F
(I = 500 mA)
F
(I = 1.0 A)
F
Total Capacitance (V = 2.0 V, f = 1.0 MHz)
C
−
−
−
50
20
−
−
−
pF
ns
R
T
Reverse Recovery Time (I = I = 10 mA, I
= 1.0 mA, Figure 3)
t
rr
F
R
R(REC)
Peak Forward Recovery Voltage (I = 100 mA, t = 20 ns, Figure 4)
V
FRM
503
mV
F
r
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 3. Recovery Time Equivalent Test Circuit
I
F
V
F
t
r
V
FRM
V
F
Time
Time
Figure 4. Peak Forward Recover Voltage Definition
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3
NSR10404NXT5G
TYPICAL CHARACTERISTICS
1000
100
10
100K
10K
1K
150°C
125°C
125°C
90°C
100
10
150°C
90°C
25°C
1
0.1
25°C
−40°C
−55°C
1
−40°C
−55°C
20
0.01
0.001
0.1
0.0001
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
25
30
35
40
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 5. Forward Voltage
Figure 6. Leakage Current
1000
100
10
1000
100
0.8
1.0
0.8
1.0
0.5
0.2
0.1
0.5
0.2
0.1
10
1
1
0.1
0.1
0
100 200 300 400 500 600 700 800 900 1K
0
5
10
15
20
25
30
35
40
I , FORWARD CURRENT (mA)
F
V , REVERSE VOLTAGE (V)
R
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
20
18
16
14
12
10
8
140
120
100
80
f = 1.0 MHz
60
6
40
4
Based on square wave currents
T = 25°C prior to surge
J
20
0
2
0
0.001 0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
35
40
T , PULSE ON TIME (ms)
p
V , REVERSE VOLTAGE (V)
R
Figure 10. Forward Surge Maximum
Figure 9. Total Capacitance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DSN2, 1.0x0.6, 0.65P, (0402)
CASE 152AE
ISSUE A
DATE 03 JUN 2016
SCALE 8:1
NOTES:
0.05
C
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.
PIN 1
INDICATOR
MILLIMETERS
DIM MIN
MAX
0.31
0.05
0.55
A
A1
b
D
E
e
L
0.25
−−−
0.45
0.05
C
TOP VIEW
1.00 BSC
0.60 BSC
0.65 BSC
0.05
0.05
C
0.20
0.30
A
GENERIC
GENERIC
C
MARKING DIAGRAM1*
MARKING DIAGRAM2*
A1
SEATING
PLANE
C
PIN 1
PIN 1
SIDE VIEW
XXXX
YYY
XXM
e
b
e/2
M
0.05
C A B
XXXX = Specific Device Code
YYY = Year Code
XX = Specific Device Code
M
= Date Code
1
2X
L
0.05
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
M
C A B
BOTTOM VIEW
CATHODE BAND MONTH
CODING
NOV OCT
DEC
RECOMMENDED
SOLDER FOOTPRINT*
SEP
JUN
DEVICE CODE
1.20
XXXX
YYY
2X
2X
0.47
0.60
YEAR CODE
MAR
FEB
JAN
PIN 1
DIMENSIONS: MILLIMETERS
XXXX
Y09
See Application Note AND8398/D for more mounting details
(EXAMPLE)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
INDICATES AUG 2009
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON54214E
DSN2, 1.0X0.6, 0.65P, (0402)
PAGE 1 OF 1
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