NSR15304NXT5G [ONSEMI]

Schottky Barrier Diode, 1.5 A, 30 V;
NSR15304NXT5G
型号: NSR15304NXT5G
厂家: ONSEMI    ONSEMI
描述:

Schottky Barrier Diode, 1.5 A, 30 V

功效 二极管
文件: 总6页 (文件大小:173K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NSR15304NXT5G  
1.5 A, 30 V, Schottky  
Barrier Diode  
These Schottky barrier diodes are optimized for low forward  
voltage drop and low leakage current and are offered in a Chip Scale  
Package (CSP) to reduce board space. The low thermal resistance  
enables designers to meet the challenging task of achieving higher  
efficiency and meeting reduced space requirements.  
www.onsemi.com  
2
MARKING  
DIAGRAM  
Features  
Low Forward Voltage Drop 530 mV (Typ.) @ I = 1.5 A  
F
PIN 1  
Low Reverse Current 20 mA (Typ.) @ V = 30 V  
R
1
1.5 A of Continuous Forward Current  
4MM  
DSN2  
(0402)  
ESD Rating Human Body Model: Class 3B  
ESD Rating Machine Model: Class C  
High Switching Speed  
CASE 152AE  
4M  
Y
= Specific Device Code  
= Year Code  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
PIN CONNECTIONS  
LCD and Keypad Backlighting  
Camera Photo Flash  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping & Protection  
1
CATHODE  
2
ANODE  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
NSR15304NXT5G  
Package  
Shipping†  
5000 / Tape & Reel  
Rating  
Symbol  
Value  
30  
Unit  
V
DSN2  
(PbFree)  
Reverse Voltage  
V
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Forward Current (DC)  
Forward Surge Current  
I
1.5  
A
F
I
A
FSM  
(60 Hz @ 1 cycle)  
12  
Repetitive Peak Forward Current  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
I
2.5  
A
FRM  
ESD Rating:  
Human Body Model  
Machine Model  
ESD  
> 8  
> 400  
kV  
V
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2018 Rev. 2  
NSR15304/D  
NSR15304NXT5G  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Thermal Resistance  
JunctiontoAmbient (Note 1)  
R
260  
480  
°C/W  
mW  
q
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
Thermal Resistance  
JunctiontoAmbient (Note 2)  
R
100  
1.25  
°C/W  
W
q
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
Storage Temperature Range  
Junction Temperature  
T
40 to +125  
°C  
°C  
stg  
T
+150  
J
1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.  
2. Mounted onto a 4 in square FR4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.  
1000  
D = 0.5  
100  
0.2  
0.1  
0.05  
10  
0.02  
0.01  
1
SINGLE PULSE  
0.1  
0.01  
0.00000001 0.0000001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1.0  
10  
100  
1000  
PULSE TIME (sec)  
Figure 1. Thermal Response (Note 1)  
100  
D = 0.5  
0.2  
0.1  
10  
1
0.05  
0.02  
0.01  
SINGLE PULSE  
0.1  
0.01  
0.00000001 0.0000001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1.0  
10  
100  
1000  
PULSE TIME (sec)  
Figure 2. Thermal Response (Note 2)  
www.onsemi.com  
2
 
NSR15304NXT5G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Leakage  
I
R
mA  
(V = 10 V)  
2.0  
20  
10  
80  
R
(V = 30 V)  
R
Forward Voltage  
V
F
mV  
(I = 10 mA)  
270  
340  
420  
480  
530  
310  
380  
460  
520  
580  
F
(I = 100 mA)  
F
(I = 500 mA)  
F
(I = 1.0 A)  
F
(I = 1.5 A)  
F
Total Capacitance (V = 2.0 V, f = 1.0 MHz)  
C
60  
25  
pF  
ns  
R
T
Reverse Recovery Time (I = I = 10 mA, I  
= 1.0 mA, Figure 3)  
t
rr  
F
R
R(REC)  
Peak Forward Recovery Voltage (I = 100 mA, t = 20 ns, Figure 4)  
V
FRM  
492  
mV  
F
r
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
820 W  
I
F
+10 V  
t
r
t
p
t
2.0 k  
0.1 mF  
I
F
t
t
100 mH  
rr  
10%  
90%  
0.1 mF  
D.U.T.  
i
= 1.0 mA  
R(REC)  
50 W OUTPUT  
PULSE  
50 W INPUT  
SAMPLING  
I
R
V
R
OUTPUT PULSE  
(I = I = 10 mA; MEASURED  
GENERATOR  
OSCILLOSCOPE  
INPUT SIGNAL  
F
R
at i  
= 1.0 mA)  
R(REC)  
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 3. Recovery Time Equivalent Test Circuit  
I
F
V
F
t
r
V
FRM  
V
F
Time  
Time  
Figure 4. Peak Forward Recover Voltage Definition  
www.onsemi.com  
3
 
NSR15304NXT5G  
TYPICAL CHARACTERISTICS  
5000  
500  
100K  
10K  
1K  
150°C  
125°C  
90°C  
100  
10  
125°C  
25°C  
1
0.1  
0.01  
150°C  
90°C  
50  
5
40°C  
55°C  
0.001  
0.0001  
0.00001  
25°C  
40°C  
0.3  
55°C  
0.4  
0
0.1  
0.2  
0.5  
0.6  
0
5
10  
15  
20  
25  
30  
V , FORWARD VOLTAGE (V)  
F
V , REVERSE VOLTAGE (V)  
R
Figure 5. Forward Voltage  
Figure 6. Leakage Current  
1000  
100  
10  
1000  
100  
0.8  
1.0  
0.8  
1.0  
0.5  
0.2  
0.1  
0.5  
0.2  
0.1  
10  
1
1
0.1  
0.1  
100  
300  
500  
700  
900  
1100 1300 1500  
0
5
10  
15  
20  
25  
30  
I , FORWARD CURRENT (mA)  
F
V , REVERSE VOLTAGE (V)  
R
Figure 7. Average Forward Power Dissipation  
Figure 8. Average Reverse Power Dissipation  
160  
140  
120  
100  
80  
30  
25  
20  
15  
10  
f = 1.0 MHz  
60  
40  
5
0
Based on square wave currents  
T = 25°C prior to surge  
J
20  
0
0.001 0.01  
0.1  
1
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
T , PULSE ON TIME (ms)  
p
V , REVERSE VOLTAGE (V)  
R
Figure 10. Forward Surge Maximum  
Figure 9. Total Capacitance  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
DSN2, 1.0x0.6, 0.65P, (0402)  
CASE 152AE  
ISSUE A  
DATE 03 JUN 2016  
SCALE 8:1  
NOTES:  
0.05  
C
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
A B  
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
PIN 1  
INDICATOR  
MILLIMETERS  
DIM MIN  
MAX  
0.31  
0.05  
0.55  
A
A1  
b
D
E
e
L
0.25  
−−−  
0.45  
0.05  
C
TOP VIEW  
1.00 BSC  
0.60 BSC  
0.65 BSC  
0.05  
0.05  
C
0.20  
0.30  
A
GENERIC  
GENERIC  
C
MARKING DIAGRAM1*  
MARKING DIAGRAM2*  
A1  
SEATING  
PLANE  
C
PIN 1  
PIN 1  
SIDE VIEW  
XXXX  
YYY  
XXM  
e
b
e/2  
M
0.05  
C A B  
XXXX = Specific Device Code  
YYY = Year Code  
XX = Specific Device Code  
M
= Date Code  
1
2X  
L
0.05  
*This information is generic. Please refer  
to device data sheet for actual part  
marking. PbFree indicator, “G”, may  
or not be present.  
M
C A B  
BOTTOM VIEW  
CATHODE BAND MONTH  
CODING  
NOV OCT  
DEC  
RECOMMENDED  
SOLDER FOOTPRINT*  
SEP  
JUN  
DEVICE CODE  
1.20  
XXXX  
YYY  
2X  
2X  
0.47  
0.60  
YEAR CODE  
MAR  
FEB  
JAN  
PIN 1  
DIMENSIONS: MILLIMETERS  
XXXX  
Y09  
See Application Note AND8398/D for more mounting details  
(EXAMPLE)  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
INDICATES AUG 2009  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON54214E  
DSN2, 1.0X0.6, 0.65P, (0402)  
PAGE 1 OF 1  
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