NSR15406NXT5G [ONSEMI]

肖特基势垒二极管,1.5 A,40 V;
NSR15406NXT5G
型号: NSR15406NXT5G
厂家: ONSEMI    ONSEMI
描述:

肖特基势垒二极管,1.5 A,40 V

二极管
文件: 总6页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NSR15406NXT5G  
1.5 A, 40 V Schottky Barrier  
Diode  
These Schottky barrier diodes are optimized for low forward  
voltage drop and low leakage current and are offered in a Chip Scale  
Package (CSP) to reduce board space. The low thermal resistance  
enables designers to meet the challenging task of achieving higher  
efficiency and meeting reduced space requirements.  
www.onsemi.com  
MARKING  
DIAGRAM  
Features  
Low Forward Voltage Drop − 510 mV (Typ.) @ I = 1.5 A  
F
PIN 1  
Low Reverse Current − 20 mA (Typ.) @ V = 40 V  
R
1.5 A of Continuous Forward Current  
DSN2  
(0603)  
CASE 152AT  
6WM  
ESD Rating − Human Body Model: Class 3B  
ESD Rating − Machine Model: Class C  
High Switching Speed  
6W = Specific Device Code  
= Date Code  
M
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
PIN CONNECTIONS  
LCD and Keypad Backlighting  
Camera Photo Flash  
Buck and Boost dc−dc Converters  
Reverse Voltage and Current Protection  
Clamping & Protection  
1
CATHODE  
2
ANODE  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
NSR15406NXT5G  
Package  
Shipping  
Rating  
Symbol  
Value  
40  
Unit  
V
DSN2  
(Pb−Free)  
5000 / Tape & Reel  
Reverse Voltage  
V
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Forward Current (DC)  
Forward Surge Current  
I
1.5  
A
F
I
A
FSM  
(60 Hz @ 1 cycle)  
19  
Repetitive Peak Forward Current  
I
3.5  
A
FRM  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
ESD Rating:  
Human Body Model  
Machine Model  
ESD  
> 8  
> 400  
kV  
V
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
July, 2016 − Rev. 0  
NSR15406/D  
NSR15406NXT5G  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Thermal Resistance  
Junction−to−Ambient (Note 1)  
Total Power Dissipation @ T = 25°C  
R
P
245  
510  
°C/W  
mW  
q
JA  
A
D
Thermal Resistance  
Junction−to−Ambient (Note 2)  
Total Power Dissipation @ T = 25°C  
R
P
90  
1.4  
°C/W  
W
q
JA  
A
D
Storage Temperature Range  
Junction Temperature  
T
−40 to +125  
+150  
°C  
°C  
stg  
T
J
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06thick single sided. Operating to steady state.  
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06thick single sided. Operating to steady state.  
1000  
D = 0.5  
100  
0.2  
0.1  
0.05  
10  
0.02  
0.01  
1
0.1  
SINGLE PULSE  
0.01  
0.00000001 0.0000001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (sec)  
Figure 1. Thermal Response (Note 1)  
100  
D = 0.5  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
1
0.1  
SINGLE PULSE  
0.01  
0.00000001 0.0000001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1.0  
10  
100  
1000  
PULSE TIME (sec)  
Figure 2. Thermal Response (Note 2)  
www.onsemi.com  
2
 
NSR15406NXT5G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Leakage  
(V = 10 V)  
I
R
mA  
2
20  
10  
75  
R
(V = 40 V)  
R
Forward Voltage  
V
F
mV  
(I = 10 mA)  
260  
325  
395  
450  
510  
300  
370  
440  
490  
560  
F
(I = 100 mA)  
F
(I = 500 mA)  
F
(I = 1 A)  
F
(I = 1.5 A)  
F
Total Capacitance (V = 1.0 V, f = 1.0 MHz)  
C
140  
53  
pF  
ns  
R
T
Reverse Recovery Time (I = I = 10 mA, I  
= 1.0 mA, Figure 3)  
t
rr  
F
R
R(REC)  
Peak Forward Recovery Voltage (I = 100 mA, t = 20 ns, Figure 4)  
V
FRM  
450  
mV  
F
r
820 W  
I
F
+10 V  
t
r
t
p
t
2.0 k  
0.1 mF  
I
F
t
t
100 mH  
rr  
10%  
90%  
0.1 mF  
D.U.T.  
i
= 1.0 mA  
R(REC)  
50 W OUTPUT  
PULSE  
50 W INPUT  
SAMPLING  
I
R
V
R
OUTPUT PULSE  
(I = I = 10 mA; MEASURED  
GENERATOR  
OSCILLOSCOPE  
INPUT SIGNAL  
F
R
at i  
= 1.0 mA)  
R(REC)  
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 3. Recovery Time Equivalent Test Circuit  
I
F
V
F
t
r
V
FRM  
V
F
Time  
Time  
Figure 4. Peak Forward Recover Voltage Definition  
www.onsemi.com  
3
 
NSR15406NXT5G  
TYPICAL CHARACTERISTICS  
5000  
500  
150°C  
10K  
100  
1
125°C  
90°C  
125°C  
25°C  
90°C  
150°C  
50  
5
−40°C  
0.01  
−55°C  
25°C  
−40°C  
0.3  
−55°C  
0.4  
0.0001  
0
0.1  
0.2  
0.5  
0.6  
0
5
10  
15  
20  
25  
30  
35  
40  
V , FORWARD VOLTAGE (V)  
F
V , REVERSE VOLTAGE (V)  
R
Figure 5. Forward Voltage  
Figure 6. Leakage Current  
1000  
100  
10  
10K  
1K  
0.8  
0.5  
0.8  
1.0  
0.5  
1.0  
0.1  
0.2  
0.2  
0.1  
100  
10  
1
1
0.1  
0.1  
100  
300  
500  
700  
900 1100 1300 1500  
0
5
10  
15  
20  
25  
30  
35  
40  
I , FORWARD CURRENT (mA)  
F
V , REVERSE VOLTAGE (V)  
R
Figure 7. Average Forward Power Dissipation  
Figure 8. Average Reverse Power Dissipation  
350  
300  
250  
200  
150  
100  
30  
25  
20  
f = 1.0 MHz  
15  
10  
5
0
50  
0
Based on square wave currents  
T = 25°C prior to surge  
J
0
5
10  
15  
20  
25  
30  
35  
40  
0.001 0.01  
0.1  
1
10  
100  
1000  
V , REVERSE VOLTAGE (V)  
R
T , PULSE ON TIME (ms)  
p
Figure 9. Total Capacitance  
Figure 10. Forward Surge Maximum  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
DSN2, 1.6x0.8, 1.2P, (0603)  
CASE 152AT  
ISSUE A  
DATE 03 JUN 2016  
SCALE 8:1  
NOTES:  
A
D
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
B
A
PIN 1  
INDICATOR  
2. CONTROLLING DIMENSION: MILLIMETERS.  
MILLIMETERS  
E
2X  
2X  
0.05  
0.05  
C
C
DIM MIN  
0.25  
A1 0.00  
MAX  
0.31  
0.05  
0.65  
A
TOP VIEW  
b
D
E
e
0.55  
1.60 BSC  
0.80 BSC  
1.20 BSC  
0.05  
0.05  
C
L
0.25  
0.35  
2X  
C
GENERIC  
MARKING DIAGRAM1*  
GENERIC  
MARKING DIAGRAM2*  
A1  
SEATING  
PLANE  
C
SIDE VIEW  
PIN 1  
PIN 1  
2X  
b
XXXX  
YYY  
e
XXM  
0.05 C A B  
1
2
XXXX = Specific Device Code  
YYY = Year Code  
XX = Specific Device Code  
M
= Date Code  
2X  
L
BOTTOM VIEW  
*This information is generic. Please refer  
to device data sheet for actual part  
marking. PbFree indicator, “G”, may  
or not be present.  
RECOMMENDED  
MOUNTING FOOTPRINT*  
CATHODE BAND MONTH  
CODING  
1.70  
NOV OCT  
DEC  
2X  
0.45  
1
SEP  
JUN  
DEVICE CODE  
YEAR CODE  
XXXX  
YYY  
0.70  
DIMENSIONS: MILLIMETERS  
MAR  
FEB  
JAN  
See Application Note AND8464/D for more mounting details  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
XXXX  
Y09  
(EXAMPLE)  
INDICATES AUG 2009  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON79729F  
DSN2, 1.6X0.8, 1.2P, (0603)  
PAGE 1 OF 1  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
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TECHNICAL PUBLICATIONS:  
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