NSR20305NXT5G [ONSEMI]
Schottky Barrier Diode, 2 A, 30 V;
| 型号： | NSR20305NXT5G |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Barrier Diode, 2 A, 30 V |
| 文件： | 总6页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSR20305NXT5G
2 A, 30 V Schottky Barrier
Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
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MARKING
DIAGRAM
Features
• Low Forward Voltage Drop − 550 mV (Typ.) @ I = 2 A
F
PIN 1
• Low Reverse Current − 30 mA (Typ.) @ V = 30 V
R
• 2 A of Continuous Forward Current
DSN2
(0502)
CASE 152AU
5HM
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
5H = Specific Device Code
= Date Code
M
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
PIN CONNECTIONS
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
1
CATHODE
2
ANODE
ORDERING INFORMATION
†
MAXIMUM RATINGS
Device
NSR20305NXT5G
Package
Shipping
Rating
Symbol
Value
30
Unit
V
DSN2
(Pb−Free)
5000 / Tape & Reel
Reverse Voltage
V
R
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Forward Current (DC)
Forward Surge Current
I
2
A
F
I
A
FSM
(60 Hz @ 1 cycle)
14
Repetitive Peak Forward Current
I
2.9
A
FRM
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating:
Human Body Model
Machine Model
ESD
> 8
> 400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2016 − Rev. 0
NSR20305/D
NSR20305NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T = 25°C
R
P
255
490
°C/W
mW
q
JA
A
D
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T = 25°C
R
P
95
1.32
°C/W
W
q
JA
A
D
Storage Temperature Range
Junction Temperature
T
−40 to +125
+150
°C
°C
stg
T
J
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06″ thick single sided. Operating to steady state.
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
1
SINGLE PULSE
0.1
0.01
0.00000001 0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.01
0.00000001 0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR20305NXT5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V = 10 V)
I
R
mA
−
−
3
30
15
100
R
(V = 30 V)
R
Forward Voltage
V
F
mV
(I = 10 mA)
−
−
−
−
−
255
320
400
455
550
290
360
440
500
600
F
(I = 100 mA)
F
(I = 500 mA)
F
(I = 1 A)
F
(I = 2 A)
F
Total Capacitance (V = 2.0 V, f = 1.0 MHz)
C
−
−
−
100
40
−
−
−
pF
ns
R
T
Reverse Recovery Time (I = I = 10 mA, I
= 1.0 mA, Figure 3)
t
rr
F
R
R(REC)
Peak Forward Recovery Voltage (I = 100 mA, t = 20 ns, Figure 4)
V
FRM
470
mV
F
r
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 3. Recovery Time Equivalent Test Circuit
I
F
V
F
t
r
V
FRM
V
F
Time
Time
Figure 4. Peak Forward Recover Voltage Definition
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3
NSR20305NXT5G
TYPICAL CHARACTERISTICS
5000
500
100K
150°C
125°C
90°C
1K
10
125°C
25°C
0.1
150°C
90°C
50
5
−40°C
−55°C
0.001
25°C −40°C
0.2 0.3
−55°C
0.00001
0
0.1
0.4
0.5
0.6
5
10
15
20
25
30
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 5. Forward Voltage
Figure 6. Leakage Current
1000
100
10
10K
1K
0.8
0.5
0.8
1.0
1.0
0.2
100
10
0.5
0.2
0.1
0.1
1
1
0.1
0.1
0
200 400 600 800 1000 1200 1400 1600 1800 2K
5
10
15
20
25
30
I , FORWARD CURRENT (mA)
F
V , REVERSE VOLTAGE (V)
R
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
40
35
30
25
20
250
200
150
100
f = 1.0 MHz
15
10
50
0
Based on square wave currents
T = 25°C prior to surge
J
5
0
0.001 0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
T , PULSE ON TIME (ms)
p
V , REVERSE VOLTAGE (V)
R
Figure 10. Forward Surge Maximum
Figure 9. Total Capacitance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DSN2, 1.4x0.6, 1.00P (0502)
CASE 152AU
ISSUE A
DATE 08 JUN 2016
SCALE 8:1
NOTES:
A B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
D
PIN 1
2. CONTROLLING DIMENSION: MILLIMETERS.
INDICATOR
MILLIMETERS
2X
2X
E
0.05
0.05
C
C
DIM MIN
0.25
A1 0.00
MAX
0.31
0.05
0.55
A
TOP VIEW
b
D
E
e
0.45
1.40 BSC
0.60 BSC
1.00 BSC
A
0.05
0.05
C
C
L
0.20
0.30
2X
GENERIC
MARKING DIAGRAM2*
GENERIC
A1
SEATING
PLANE
C
SIDE VIEW
MARKING DIAGRAM1*
PIN 1
PIN 1
XXXX
YYY
e
XXM
2X
b
1
2
0.05 C A B
XXXX = Specific Device Code
YYY = Year Code
XX = Specific Device Code
M
= Date Code
2X
L
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
CATHODE BAND MONTH
CODING
1.45
NOV OCT
DEC
2X
0.40
1
SEP
JUN
DEVICE CODE
YEAR CODE
XXXX
YYY
0.60
DIMENSIONS: MILLIMETERS
MAR
FEB
JAN
See Application Note AND8464/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
XXXX
Y09
(EXAMPLE)
INDICATES AUG 2009
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79730F
DSN2, 1.4X0.6, 1.00P (0502)
PAGE 1 OF 1
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