NSS12501UW3T2G [ONSEMI]
12 V, 7.0 A, Low VCE(sat) NPN Transistor; 12 V ， 7.0 A，低VCE （ sat）的NPN晶体管
| 型号： | NSS12501UW3T2G |
| 厂家： | 
ONSEMI |
| 描述： | 12 V, 7.0 A, Low VCE(sat) NPN Transistor |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS12501UW3T2G
12 V, 7.0 A, Low VCE(sat)
NPN Transistor
2
ON Semiconductor's e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
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Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
12 VOLTS, 7.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 31 mW
2
COLLECTOR
3
Features
1
BASE
•ꢀThis is a Pb-Free Device
MAXIMUM RATINGS (T = 25°C)
A
2
EMITTER
Rating
Symbol
Max
12
Unit
Vdc
Vdc
Vdc
Adc
A
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
V
CEO
V
CBO
V
EBO
3
12
WDFN3
CASE 506AU
6.0
5.0
7.0
2
1
Collector Current - Continuous
Collector Current - Peak
Electrostatic Discharge
I
C
I
CM
MARKING DIAGRAM
ESD
HBM Class 3B
MM Class C
VF MG
THERMAL CHARACTERISTICS
Characteristic
G
Symbol
Max
Unit
1
Total Device Dissipation, T = 25°C
P
(Note 1)
875
7.0
mW
mW/°C
VF = Specific Device Code
M
A
D
Derate above 25°C
= Date Code
= Pb-Free Package
G
(Note: Microdot may be in either location)
Thermal Resistance,
Junction-to-Ambient
R
(Note 1)
143
°C/W
q
JA
Total Device Dissipation, T = 25°C
P
D
(Note 2)
1.5
11.8
W
mW/°C
A
Derate above 25°C
ORDERING INFORMATION
Thermal Resistance,
Junction-to-Ambient
R
R
(Note 2)
(Note 2)
85
°C/W
°C/W
°C
q
JA
†
Device
Package
Shipping
Thermal Resistance,
Junction-to-Lead #1
23
q
JL
WDFN3
(Pb-Free)
3000/
Tape & Reel
NSS12501UW3T2G
Junction and Storage
Temperature Range
T , T
J
-55 to
+150
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1. FR-ā4 @ 100 mm , 1 oz copper traces.
2
2. FR-ā4 @ 500 mm , 1 oz copper traces.
©ꢀ Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 2
1
Publication Order Number:
NSS12501UW3/D
NSS12501UW3T2G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collectorā-āEmitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
12
12
6.0
-
-
-
-
-
-
-
C
B
Collectorā-āBase Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
V
-
C
E
Emitterā-āBase Breakdown Voltage
(I = 0.1 mAdc, I = 0)
Vdc
-
E
C
Collector Cutoff Current
(V = 12 Vdc, I = 0)
I
mAdc
mAdc
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
(V = 6.0 Vdc)
I
EBO
-
EB
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I = 10 mA, V = 2.0 V)
h
FE
200
200
200
200
200
-
-
-
-
-
-
-
C
CE
(I = 500 mA, V = 2.0 V)
C
CE
(I = 1.0 A, V = 2.0 V)
345
330
315
C
CE
(I = 2.0 A, V = 2.0 V)
C
CE
(I = 3.0 A, V = 2.0 V)
C
CE
Collectorā-āEmitter Saturation Voltage (Note 3)
(I = 0.1 A, I = 0.010 A)
(I = 1.0 A, I = 0.100 A)
V
V
CE(sat)
-
-
-
-
-
-
0.007
0.031
0.045
0.070
0.100
0.100
0.008
0.035
0.060
0.100
0.120
0.120
C
B
C
B
(I = 1.0 A, I = 0.010 A)
C
B
(I = 2.0 A, I = 0.020 A)
C
B
(I = 3.0 A, I = 0.030 A)
C
B
(I = 4.0 A, I = 0.400 A)
C
B
Baseā-āEmitter Saturation Voltage (Note 3)
(I = 1.0 A, I = 0.01 A)
V
V
V
BE(sat)
-
-
0.760
0.730
-
0.900
0.900
C
B
Baseā-āEmitter Turn-on Voltage (Note 3)
(I = 2.0 A, V = 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = 100 mA, V = 5.0 V, f = 100 MHz)
f
T
MHz
150
-
C
CE
Input Capacitance (V = 0.5 V, f = 1.0 MHz)
EB
Cibo
-
-
650
120
pF
pF
Output Capacitance (V = 3.0 V, f = 1.0 MHz)
CB
Cobo
SWITCHING CHARACTERISTICS
Delay (V = 10 V, I = 750 mA, I = 15 mA)
B1
t
t
-
-
-
-
-
-
-
-
90
ns
ns
ns
ns
CC
C
d
Rise (V = 10 V, I = 750 mA, I = 15 mA)
B1
t
r
100
320
100
CC
C
Storage (V = 10 V, I = 750 mA, I = 15 mA)
B1
CC
C
s
Fall (V = 10 V, I = 750 mA, I = 15 mA)
B1
t
f
CC
C
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS12501UW3T2G
0.15
0.10
0.2
V
= 150°C
I /I = 100
C B
CE(sat)
I /I = 10
C B
150°C
25°C
0.15
0.1
-55 °C
0.05
0.05
0
V
= -55°C
CE(sat)
25°C
0
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
625
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
150°C (5 V)
150°C (2 V)
575
525
475
425
375
325
275
225
I /I = 10
C B
-55 °C
25°C
25°C (5 V)
25°C (2 V)
150°C
-55 °C (5 V)
-55 °C (2 V)
0.4
0.3
175
125
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.0
0.8
0.6
0.4
10 mA
100 mA 300 mA
V
CE
= 2.0 V
I
C
= 500 mA
-55 °C
25°C
150°C
0.2
0
0.3
0.2
0.001
0.01
0.1
1.0
10
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
NSS12501UW3T2G
140
675
625
575
525
475
425
375
C
(pF)
ibo
C
(pF)
130
120
110
100
90
obo
80
70
325
275
0
1.0
2.0
3.0
4.0
5.0
6.0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
, COLLECTOR BASE VOLTAGE (V)
V
, EMITTER BASE VOLTAGE (V)
V
CB
EB
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1.0 mS
10 mS
1
100 mS
1.0 S
0.1
Thermal
Limit
Single Pulse Test
= 25°C
at T
amb
0.01
0.01
0.1
1.0
(V
10
100
V
CE
)
dc
Figure 9. Safe Operating Area
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4
NSS12501UW3T2G
PACKAGE DIMENSIONS
WDFN3
CASE 506AU-01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
D
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
B
PIN ONE
REFERENCE
MILLIMETERS
INCHES
NOM
0.030
DIM
A
A1
A3
b
D
D2
E
MIN
0.70
0.00
NOM
0.75
MAX
0.80
0.05
MIN
0.028
0.000
MAX
0.031
0.002
0.20 REF
0.30
2.00 BSC
1.50
2.00 BSC
1.00
0.008 REF
0.012
0.079 BSC
0.059
0.079 BSC
0.039
0.051 BSC
0.014 REF
0.016
E
0.25
1.40
0.90
0.35
1.60
1.10
0.010
0.055
0.035
0.014
0.063
0.043
2 X
E2
e
K
0.10
C
1.30 BSC
0.35 REF
0.40
2 X
L
0.35
0.45
0.014
0.018
0.10
C
TOP VIEW
SOLDERING FOOTPRINT*
A
0.10
0.08
C
C
1.300
2X
8 X
0.400
(A3)
SIDE VIEW
0.600
A1
SEATING
PLANE
C
0.250
D2
e
1.100
e/2
0.300
2
1
2X L
0.400
K
0.275
1.600
E2
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
3
0.10
0.05
C
C
A
B
3X b
NOTE 3
BOTTOM VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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