NSS40501UW3_13 [ONSEMI]
40 V, 5.0 A, Low VCE(sat) NPN Transistor;
| 型号： | NSS40501UW3_13 |
| 厂家： | 
ONSEMI |
| 描述： | 40 V, 5.0 A, Low VCE(sat) NPN Transistor |
| 文件： | 总5页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS40501UW3,
NSV40501UW3
40 V, 5.0 A, Low VCE(sat)
NPN Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
http://onsemi.com
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
40 VOLTS, 5.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 38 mW
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
1
BASE
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
2
EMITTER
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
3
Compliant
WDFN3
CASE 506AU
MAXIMUM RATINGS (T = 25°C)
A
2
1
Rating
Symbol
Max
40
Unit
Vdc
Vdc
Vdc
Adc
A
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
MARKING DIAGRAM
40
6.0
5.0
7.0
VB M G
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
I
C
G
I
CM
1
ESD
HBM Class 3B
MM Class C
VB = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T = 25°C
P
D
(Note 1)
875
7.0
mW
mW/°C
A
ORDERING INFORMATION
Derate above 25°C
†
Thermal Resistance,
R
(Note 1)
143
°C/W
Device
Package
Shipping
q
JA
Junction−to−Ambient
WDFN3
(Pb−Free)
3000/
NSS40501UW3T2G
Total Device Dissipation, T = 25°C
Derate above 25°C
P
(Note 2)
(Note 2)
1.5
11.8
W
mW/°C
A
D
Tape & Reel
WDFN3
(Pb−Free)
3000/
NSV40501UW3T2G
Thermal Resistance,
Junction−to−Ambient
R
85
°C/W
°C/W
°C
q
JA
Tape & Reel
Thermal Resistance,
Junction−to−Lead #3
R
(Note 2)
JL
23
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
q
Junction and Storage
Temperature Range
T , T
−55 to
+150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
2
1. FR−4 @ 100 mm , 1 oz copper traces.
2. FR−4 @ 500 mm , 1 oz copper traces.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 5
NSS40501UW3/D
NSS40501UW3, NSV40501UW3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
40
40
6.0
−
−
−
−
−
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
Vdc
−
E
C
Collector Cutoff Current
(V = 40 Vdc, I = 0)
I
mAdc
mAdc
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
I
EBO
(V = 6.0 Vdc)
−
EB
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = 10 mA, V = 2.0 V)
200
200
200
200
180
−
−
−
−
−
−
C
CE
(I = 500 mA, V = 2.0 V)
−
C
CE
(I = 1.0 A, V = 2.0 V)
320
305
295
C
CE
(I = 2.0 A, V = 2.0 V)
C
CE
(I = 3.0 A, V = 2.0 V)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 0.1 A, I = 0.010 A)
V
V
CE(sat)
−
−
−
−
−
−
0.006
0.038
0.060
0.097
0.130
0.110
0.010
0.045
0.080
0.120
0.160
0.150
C
B
(I = 1.0 A, I = 0.100 A)
C
B
(I = 1.0 A, I = 0.010 A)
C
B
(I = 2.0 A, I = 0.020 A)
C
B
(I = 3.0 A, I = 0.030 A)
C
B
(I = 4.0 A, I = 0.400 A)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 1.0 A, I = 0.01 A)
V
V
V
BE(sat)
−
−
0.760
0.730
−
0.900
0.900
C
B
Base−Emitter Turn−on Voltage (Note 3)
(I = 2.0 A, V = 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = 100 mA, V = 5.0 V, f = 100 MHz)
f
T
MHz
150
−
−
C
CE
Input Capacitance (V = 0.5 V, f = 1.0 MHz)
Cibo
650
70
pF
pF
EB
Output Capacitance (V = 3.0 V, f = 1.0 MHz)
Cobo
−
CB
SWITCHING CHARACTERISTICS
Delay (V = 30 V, I = 750 mA, I = 15 mA)
t
t
−
−
−
−
−
−
−
−
90
100
1050
100
ns
ns
ns
ns
CC
C
B1
d
Rise (V = 30 V, I = 750 mA, I = 15 mA)
t
r
CC
C
B1
Storage (V = 30 V, I = 750 mA, I = 15 mA)
CC
C
B1
s
Fall (V = 30 V, I = 750 mA, I = 15 mA)
t
f
CC
C
B1
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS40501UW3, NSV40501UW3
0.20
0.15
0.10
0.40
150°C
I /I = 100
C
B
I /I = 10
C
B
0.35
0.30
0.25
0.20
0.15
0.10
V
= 150°C
CE(sat)
25°C
V
= −55°C
CE(sat)
25°C
−55°C
0.05
0
0.05
0
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
550
1.2
150°C (5 V)
150°C (2 V)
500
450
400
350
300
250
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I /I = 10
C
B
−55°C
25°C
25°C (5 V)
25°C (2 V)
−55°C (5 V)
−55°C (2 V)
150°C
200
150
100
0.4
0.3
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.0
0.8
0.6
0.4
100 mA
10 mA
I
C
= 500 mA
300 mA
V
CE
= 2.0 V
−55°C
25°C
150°C
0.2
0
0.3
0.2
0.001
0.01
0.1
1.0
10
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Figure 6. Saturation Region
Collector Current
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3
NSS40501UW3, NSV40501UW3
675
625
130
C
(pF)
C
(pF)
ibo
obo
110
575
525
475
425
375
90
70
50
30
10
325
275
30
35
0
1.0
2.0
3.0
4.0
5.0
6.0
0
5.0
10
15
20
25
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1.0
0.1
1.0 mS
10 mS
100 mS
1.0 S
Single Pulse Test
Thermal
Limit
at T
= 25°C
amb
0.01
0.01
0.1
1.0
(V
10
100
V
)
CE
dc
Figure 9. Safe Operating Area
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4
NSS40501UW3, NSV40501UW3
PACKAGE DIMENSIONS
WDFN3
CASE 506AU
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
D
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
B
PIN ONE
MILLIMETERS
INCHES
NOM
0.030
REFERENCE
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
MIN
0.70
0.00
NOM
0.75
MAX
0.80
0.05
MIN
0.028
0.000
MAX
0.031
0.002
0.20 REF
0.30
2.00 BSC
1.50
2.00 BSC
1.00
0.008 REF
0.012
0.079 BSC
0.059
0.079 BSC
0.039
0.051 BSC
0.014 REF
0.016
E
0.25
1.40
0.90
0.35
1.60
1.10
0.010
0.055
0.035
0.014
0.063
0.043
2 X
0.10
C
1.30 BSC
0.35 REF
0.40
2 X
0.35
0.45
0.014
0.018
0.10
C
TOP VIEW
SIDE VIEW
SOLDERING FOOTPRINT*
A
0.10
0.08
C
C
1.300
2X
8 X
0.400
(A3)
0.600
A1
SEATING
PLANE
C
0.250
D2
e
1.100
e/2
0.300
2
1
2X L
0.400
K
0.275
1.600
E2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
3
0.10
0.05
C
C
A
B
3X b
NOTE 3
BOTTOM VIEW
ON Semiconductor and
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NSS40501UW3/D
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