NSS60601MZ4T1G [ONSEMI]
60 V, 6.0 A, Low VCE(sat) NPN Transistor; 60 V ， 6.0 A，低VCE （ sat）的NPN晶体管
| 型号： | NSS60601MZ4T1G |
| 厂家： | 
ONSEMI |
| 描述： | 60 V, 6.0 A, Low VCE(sat) NPN Transistor |
| 文件： | 总5页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS60601MZ4
60 V, 6.0 A, Low VCE(sat)
NPN Transistor
2
ON Semiconductor's e PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V ) and high current gain capability. These are designed
CE(sat)
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
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Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
60 VOLTS, 6.0 AMPS
2.0 WATTS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
C 2,4
2
Features
B 1
E 3
•ꢀThis is a Pb-Free Device
Schematic
MAXIMUM RATINGS (T = 25°C)
A
MARKING
DIAGRAM
Rating
Symbol
Max
60
Unit
Vdc
Vdc
Vdc
A
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
V
CEO
V
CBO
100
6.0
SOT-223
CASE 318E
STYLE 1
AYW
60601G
V
EBO
Collector Current - Continuous
Collector Current - Peak
I
C
6.0
1
I
12.0
A
CM
A
= Assembly Location
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Y
W
Symbol
Max
Unit
60601 = Specific Device Code
Total Device Dissipation
T = 25°C
Derate above 25°C
P
(Note 1)
800
mW
G
= Pb-Free Package
D
A
PIN ASSIGNMENT
4
6.5
mW/°C
°C/W
Thermal Resistance,
Junction-to-Ambient
R
q
(Note 1)
155
JA
C
Total Device Dissipation
T = 25°C
Derate above 25°C
P
(Note 2)
2
W
D
A
B
C
E
3
15.6
64
mW/°C
°C/W
1
2
Thermal Resistance,
Junction-to-Ambient
R
q
(Note 2)
JA
Top View Pinout
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3)
710
mW
ORDERING INFORMATION
†
Device
Package
Shipping
Junction and Storage
Temperature Range
T , T
J
-55 to
+150
°C
stg
NSS60601MZ4T1G
NSS60601MZ4T3G
SOT-223
(Pb-Free)
1000/
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT-223
(Pb-Free)
4000/
Tape & Reel
2
1. FR-ā4 @ 7.6 mm , 1 oz. copper traces.
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. FR-ā4 @ 645 mm , 1 oz. copper traces.
3. Thermal response.
©ꢀ Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 0
1
Publication Order Number:
NSS60601MZ4/D
NSS60601MZ4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collectorā-āEmitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
60
100
6.0
C
B
Collectorā-āBase Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
V
C
E
Emitterā-āBase Breakdown Voltage
(I = 0.1 mAdc, I = 0)
Vdc
E
C
Collector Cutoff Current
(V = 40 Vdc, I = 0)
I
mAdc
mAdc
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
(V = 6.0 Vdc)
I
EBO
EB
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I = 500 mA, V = 2.0 V)
h
FE
150
120
100
50
C
CE
(I = 1.0 A, V = 2.0 V)
360
C
CE
(I = 2.0 A, V = 2.0 V)
C
CE
(I = 6.0 A, V = 2.0 V)
C
CE
Collectorā-āEmitter Saturation Voltage (Note 4)
(I = 0.1 A, I = 2.0 mA)
(I = 1.0 A, I = 0.100 A)
V
V
CE(sat)
0.040
0.060
0.100
0.220
0.300
C
B
0.045
0.085
C
B
(I = 2.0 A, I = 0.200 A)
C
B
(I = 3.0 A, I = 60 mA)
C
B
(I = 6.0 A, I = 0.6 A)
C
B
Baseā-āEmitter Saturation Voltage (Note 4)
(I = 1.0 A, I = 0.1 A)
V
V
V
BE(sat)
0.900
0.900
C
B
Baseā-āEmitter Turn-on Voltage (Note 4)
(I = 1.0 A, V = 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = 500 mA, V = 10 V, f = 100 MHz)
f
T
MHz
100
C
CE
Input Capacitance (V = 5.0 V, f = 1.0 MHz)
EB
Cibo
400
37
pF
pF
Output Capacitance (V = 10 V, f = 1.0 MHz)
CB
Cobo
SWITCHING CHARACTERISTICS
Delay (V = 30 V, I = 750 mA, I = 15 mA)
B1
t
t
85
115
ns
ns
ns
ns
CC
C
d
Rise (V = 30 V, I = 750 mA, I = 15 mA)
B1
t
r
CC
C
Storage (V = 30 V, I = 750 mA, I = 15 mA)
B1
1350
125
CC
C
s
Fall (V = 30 V, I = 750 mA, I = 15 mA)
B1
t
f
CC
C
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
2.5
2.0
T
C
1.5
1.0
T
A
0.5
0
25
50
75
100
125
150
T , TEMPERATURE (°C)
J
Figure 1. Power Derating
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2
NSS60601MZ4
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
400
V
CE
= 4 V
V
CE
= 2 V
350
300
250
200
150
100
50
150°C
25°C
150°C
25°C
-55°C
-55°C
0
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
1
I /I = 50
C B
I /I = 10
C B
25°C
150°C
25°C
0.1
-55°C
0.1
150°C
-55°C
0.01
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Collector-Emitter Saturation Voltage
1
1.2
1
V
CE
= 2 V
I
C
= 6 A
-55°C
25°C
0.8
0.6
0.4
0.2
0
4 A
3 A
0.1
2 A
150°C
0.5 A
1 A
0.1 A
0.01
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , BASE CURRENT (A)
B
I , COLLECTOR CURRENT (A)
C
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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3
NSS60601MZ4
TYPICAL CHARACTERISTICS
1.2
1
1.2
I /I = 50
C B
I /I = 10
C B
1
0.8
0.6
0.4
0.2
0
-55°C
25°C
-55°C
25°C
0.8
0.6
0.4
0.2
0
150°C
150°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. Base-Emitter Saturation Voltage
Figure 9. Base-Emitter Saturation Voltage
900
800
700
600
500
400
300
200
100
0
140
120
100
80
T = 25°C
test
T = 25°C
test
J
J
f
= 1 MHz
f
= 1 MHz
60
40
20
0
0
1
2
3
4
5
6
7
8
0
10 20 30 40 50 60 70 80 90 10
V , EMITTER BASE VOLTAGE (V)
EB
V , COLLECTOR BASE VOLTAGE (V)
CB
Figure 10. Input Capacitance
Figure 11. Output Capacitance
140
120
100
80
100
10
T = 25°C
J
f
= 1 MHz
= 10 V
test
V
CE
0.5 ms
1 ms
1
10 ms
60
100 ms
40
0.1
0.01
20
0
0.01
0.1
1
10
1
10
10
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 12. Current-Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
NSS60601MZ4
PACKAGE DIMENSIONS
SOT-223 (TO-261)
CASE 318E-04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
-
DIM
A
A1
b
b1
c
D
E
e
e1
L1
H
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
1.75
7.00
-
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
4
2
H
E
E
1
3
b
e1
e
q
C
q
STYLE 1:
A
PIN 1. BASE
2. COLLECTOR
3. EMITTER
0.08 (0003)
A1
4. COLLECTOR
L1
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
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