NSTB1002DXV5T1G [ONSEMI]
Dual Common Base−Collector Bias Resistor Transistors; 双共基极 - 集电极偏置电阻晶体管
| 型号： | NSTB1002DXV5T1G |
| 厂家： | 
ONSEMI |
| 描述： | Dual Common Base−Collector Bias Resistor Transistors |
| 文件： | 总6页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSTB1002DXV5T1G,
NSTB1002DXV5T5G
Preferred Devices
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
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3
2
1
Resistor Network
R1
R2
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSTB1002DXV5T1G
series, two complementary devices are housed in the SOT−553
package which is ideal for low power surface mount applications
where board space is at a premium.
Q2
Q1
R1
4
5
• Simplifies Circuit Design
• Reduces Board Space
5
• Reduces Component Count
1
SOT−553
CASE 463B
• Available in 8 mm, 7 inch Tape and Reel
• These are Pb−Free Devices
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q
A
1
MARKING DIAGRAM
and Q , − minus sign for Q (PNP) omitted)
2
1
Value
Q1
5
Q2
50
50
Rating
Symbol
Unit
Vdc
Vdc
U9 MG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
−40
−40
G
CBO
1
V
CEO
I
−200 100
mAdc
C
U9 = Specific Device Code
M
= Date Code
= Pb−Free Package
THERMAL CHARACTERISTICS
G
Characteristic
(One Junction Heated)
(Note: Microdot may be in either location)
Symbol
Max
Unit
Total Device Dissipation
T = 25°C
P
357 (Note 1)
2.9 (Note 1) mW/°C
mW
A
D
Derate above 25°C
ORDERING INFORMATION
Thermal Resistance −
Junction-to-Ambient
R
q
JA
350 (Note 1) °C/W
Device
Package
Shipping
NSTB1002DXV5T1G SOT−553
4 mm pitch
Characteristic
(Both Junctions Heated)
(Pb−Free) 4000/Tape & Reel
Symbol
Max
Unit
Total Device Dissipation
T = 25°C
P
500 (Note 1)
4.0 (Note 1)
mW
A
D
NSTB1002DXV5T5G SOT−553
2 mm pitch
Derate above 25°C
mW/°C
(Pb−Free) 8000/Tape & Reel
Thermal Resistance −
R
q
JA
250 (Note 1) °C/W
Junction-to-Ambient
Preferred devices are recommended choices for future use
and best overall value.
Junction and Storage Temperature
T , T
J stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 0
NSTB1002DXV5/D
NSTB1002DXV5T1G, NSTB1002DXV5T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
V
V
V
−40
−40
−5.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
−
Vdc
I
−50
−50
nAdc
nAdc
BL
Collector Cutoff Current
I
−
CEX
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
(I = −10 mAdc, V = −1.0 Vdc)
100
60
300
−
C
CE
(I = −50 mAdc, V = −1.0 Vdc)
C
CE
(I = −100 mAdc, V = −1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
BE(sat)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Output Capacitance
f
250
−
−
MHz
pF
T
C
obo
4.5
10.0
12
Input Capacitance
C
ibo
−
pF
Input Impedance
h
2.0
kW
ie
re
fe
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
−4
Voltage Feedback Ratio
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
h
h
0.1
100
3.0
−
10
400
60
X 10
−
CE
C
Small−Signal Current Gain
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Output Admittance
h
oe
mmhos
dB
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
nF
4.0
(V = −5.0 Vdc, I = −100 mAdc, R = 1.0 kW, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
(V = −3.0 Vdc, V = ꢀ0.5 Vdc)
CC BE
t
t
−
−
−
−
35
35
d
ns
ns
Rise Time
(I = −10 mAdc, I = −1.0 mAdc)
C B1
t
r
Storage Time
(V = −3.0 Vdc, I = −10 mAdc)
CC C
225
75
s
Fall Time
(I = I = −1.0 mAdc)
B1 B2
t
f
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
I
−
−
−
−
−
−
100
500
0.1
nAdc
nAdc
mAdc
CBO
CEO
(V = 50 V, I = 0)
CB
E
Collector-Emitter Cutoff Current
(V = 50 V, I = 0)
CB
B
Emitter-Base Cutoff Current
(V = 6.0, I = 5.0 mA)
I
EBO
EB
C
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
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2
NSTB1002DXV5T1G, NSTB1002DXV5T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V
50
50
80
−
−
−
−
−
Vdc
Vdc
(BR)CBO
(BR)CEO
(I = 10 mA, I = 0)
C
E
Collector-Emitter Breakdown Voltage
V
(I = 2.0 mA, I = 0)
C
B
DC Current Gain
h
FE
140
−
−
(V = 10 V, I = 5.0 mA)
CE
C
Collector−Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
0.25
0.2
−
Vdc
Vdc
Vdc
kW
CE(SAT)
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
−
−
OL
CC
B
L
Output Voltage (off)
V
4.9
−
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
CC
B
L
Input Resistor
Resistor Ratio
R1
33
47
61
R1/R2
0.8
1.0
1.2
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
250
200
150
100
R
= 833°C/W
q
JA
50
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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3
NSTB1002DXV5T1G, NSTB1002DXV5T5G
TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR
2.0
1.0
T = +125°C
J
V
= 1.0 V
CE
+25°C
−ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
I , COLLECTOR CURRENT (mA)
C
Figure 2. DC Current Gain
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4
NSTB1002DXV5T1G, NSTB1002DXV5T5G
TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
25°C
−25°C
25°C
75°C
100
T ꢁ=ꢁ−25°C
A
0.1
0.01
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
= 0 mA
75°C
I
E
T ꢁ=ꢁ−25°C
A
0.8
T
= 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Voltage versus Output Current
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5
NSTB1002DXV5T1G, NSTB1002DXV5T5G
PACKAGE DIMENSIONS
SOT−553
XV5 SUFFIX
CASE 463B−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
D
A
−X−
L
5
4
3
E
−Y−
MILLIMETERS
INCHES
NOM
0.022
0.009
0.005
H
E
DIM
A
b
c
D
E
MIN
0.50
0.17
0.08
1.50
1.10
NOM
0.55
0.22
0.13
1.60
MAX
MIN
MAX
0.024
0.011
0.007
0.067
0.051
1
2
0.60
0.27
0.18
1.70
1.30
0.020
0.007
0.003
0.059
0.043
b 5 PL
c
0.063
0.047
e
1.20
M
0.08 (0.003)
X Y
e
L
0.50 BSC
0.20
1.60
0.020 BSC
0.008
0.10
1.50
0.30
1.70
0.004
0.059
0.012
0.067
H
0.063
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSTB1002DXV5/D
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