NSV40301CTWG [ONSEMI]
40 V, 3.0A Low VCE(sat) NPN Transistor;型号: | NSV40301CTWG |
厂家: | ONSEMI |
描述: | 40 V, 3.0A Low VCE(sat) NPN Transistor |
文件: | 总7页 (文件大小:279K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Bipolar Power Transistors
40 V, 3.0 A, Low VCE(sat)
NPN Transistor
NSS40301CT
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
www.onsemi.com
transistors are surface mount devices featuring ultra−low saturation
voltage, V , and high current gain capability. These are designed
CE(sat)
for use in lower voltage, high speed switching applications where
affordable efficient energy control is important.
NPN TRANSISTOR
3.0 AMPERES
40 VOLTS
Housed in an ultra slim LFPAK4 5x6 package, typical applications
are DC−DC converters and power management in portable and battery
powered products such as cellular and cordless phones, digital
cameras and MP3 players where PCB space is at a premium. The
LFPAK4 5x6 package also contains wettable flanks which are a
requirement for the automotive industry’s optical inspection methods
that are implemented in end applications such as air bag deployment,
powertrain control units, and instrument clusters.
C 5
Features
B 4 E 1,2,3
• Complement to NSS40300CT
• Ultra−slim LFPAK4 Package (5 x 6 mm) with Wettable Flanks
Schematic
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
LFPAK4 5x6
CASE 760AB
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
MARKING DIAGRAM
5
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
40
CB
EB
40301
AWLYW
V
6.0
1.0
3.0
5.0
Base Current − Continuous
Collector Current − Continuous
Collector Current − Peak
Total Power Dissipation
I
B
C
I
1
2
3
4
I
CM
(Top View)
P
D
40301
A
= Specific Device Code
= Assembly Location
= Wafer Lot
Total P @ T = 25°C (Note 1)
2.0
0.80
D
D
A
Total P @ T = 25°C (Note 2)
A
WL
Y
W
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
= Year
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1. Mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material.
2. Mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
July, 2021 − Rev. 2
NSS40301CT/D
NSS40301CT
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
°C/W
R
R
58
149
q
JA
JA
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 10 mAdc, I = 0 Adc)
V
CEO(sus)
40
6.0
−
−
−
−
−
−
Vdc
Vdc
C
B
Emitter−Base Voltage (I = 50 mAdc, I = 0 Adc)
V
−
E
C
EBO
CBO
Collector Cutoff Current (V = 40 Vdc)
I
100
100
nAdc
nAdc
CB
Emitter Cutoff Current (V = 6.0 Vdc)
I
−
BE
EBO
ON CHARACTERISTICS (Note 3)
Collector−Emitter Saturation Voltage
V
V
Vdc
CE(sat)
(I = 0.5 Adc, I = 50 mAdc)
−
−
−
−
−
−
0.050
0.100
0.200
C
B
(I = 1.0 Adc, I = 20 mAdc)
C
B
(I = 3.0 Adc, I = 0.3 Adc)
C
B
Base−Emitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc)
−
−
−
−
1.0
0.9
Vdc
Vdc
−
C
B
BE(sat)
Base−Emitter On Voltage (I = 1.0 Adc, V = 2.0 Vdc)
V
BE(on)
C
CE
DC Current Gain
(I = 0.5 Adc, V = 1.0 Vdc)
h
FE
220
200
100
−
−
−
C
CE
(I = 1.0 Adc, V = 1.0 Vdc)
600
C
CE
(I = 3.0 Adc, V = 1.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance (V = 10 Vdc, f = 1.0 MHz)
C
−
−
25
−
−
pF
pF
CB
ob
Input Capacitance (V = 5.0 Vdc, f = 1.0 MHz)
C
170
EB
ib
Current−Gain − Bandwidth Product (Note 4)
f
T
MHz
(I = 500 mA, V = 10 V, F = 1.0 MHz)
−
215
−
C
CE
test
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. f = |h | • f
T
FE
test
2.5
2.0
1.5
1.0
T
C
T
A
0.5
0
25
50
75
100
125
150
T , TEMPERATURE (°C)
J
Figure 1. Power Derating
www.onsemi.com
2
NSS40301CT
TYPICAL CHARACTERISTICS
600
500
400
300
200
700
V
CE
= 4 V
V
CE
= 1 V
150°C
600
500
400
300
200
150°C
25°C
25°C
−55°C
−55°C
100
0
100
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
10
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
1
I /I = 10
C
B
I /I = 50
C
150°C
B
150°C
25°C
0.1
−55°C
25°C
0.1
−55°C
0.01
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Collector−Emitter Saturation Voltage
Figure 5. Collector−Emitter Saturation Voltage
1
1.2
1.0
0.8
0.6
0.4
V
= 2 V
CE
−55°C
I
C
= 3 A
2 A
0.1
25°C
1 A
0.5 A
150°C
0.2
0
0.1 A
0.01
0.0001
0.001
0.01
0.1
1.0
0.001
0.01
0.1
1
I , BASE CURRENT (A)
B
I , COLLECTOR CURRENT (A)
C
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
www.onsemi.com
3
NSS40301CT
TYPICAL CHARACTERISTICS
1.4
1.4
1.2
I /I = 10
I /I = 50
C B
C
B
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
−55°C
−55°C
25°C
25°C
150°C
150°C
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. Base−Emitter Saturation Voltage
Figure 9. Base−Emitter Saturation Voltage
450
100
80
T = 25°C
test
T = 25°C
test
J
J
400
350
300
250
200
150
100
f
= 1 MHz
f
= 1 MHz
60
40
20
0
50
0
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
240
200
160
120
80
10
1
T = 25°C
test
J
f
= 1 MHz
0.5 ms
V
CE
= 10 V
1 ms
10 ms
100 ms
0.1
40
0
0.01
0.001
0.01
0.1
1
10
1
10
, COLLECTOR−EMITTER VOLTAGE (V)
100
I , COLLECTOR CURRENT (A)
C
V
CE
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
www.onsemi.com
4
NSS40301CT
ORDERING INFORMATION
Device
†
Package
Shipping
NSS40301CTWG
LFPAK4 5x6
3,000 / Tape & Reel
3,000 / Tape & Reel
(Pb−Free)
NSV40301CTWG*
LFPAK 5x6
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
www.onsemi.com
5
NSS40301CT
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
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