NSV60101DMR6T1G [ONSEMI]
60 V, 1 A, Low VCE(sat) NPN Transistors in SC-74;
| 型号： | NSV60101DMR6T1G |
| 厂家： | 
ONSEMI |
| 描述： | 60 V, 1 A, Low VCE(sat) NPN Transistors in SC-74 |
| 文件： | 总7页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low VCE(sat) NPN
Transistors, 60 V, 1 A
NSS60101DMR6
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
www.onsemi.com
60 Volt, 1 Amp
Typical applications are DC−DC converters and LED lightning,
power management…etc. In the automotive industry they can be used
in air bag deployment and in the instrument cluster. The high current
NPN Low V
Transistors
CE(sat)
2
gain allows e PowerEdge devices to be driven directly from PMU’s
MARKING
DIAGRAM
control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
SC−74
CASE 318F
6
Features
RAD MG
1
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
G
RAD= Specific Device Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
M
G
= Date Code
= Pb−Free Package
Compliant
(Note: Microdot may be in either location)
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Symbol
Max
60
80
6
Unit
Vdc
Vdc
Vdc
A
PIN CONNECTIONS
V
CEO
V
CBO
V
EBO
E
B
C
1
2
3
6
5
4
C
B
E
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
I
C
1
I
2
A
CM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
6
5
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
(Notes 1 and 2)
R
234
°C/W
q
JA
4
3
Total Power Dissipation per Package @
A
P
0.53
300
W
°C/W
W
D
T = 25°C (Note 2)
Thermal Resistance Junction−to−Ambient
(Note 3)
R
q
ORDERING INFORMATION
JA
†
Device
Package
Shipping
Power Dissipation per Transistor @ T = 25°C
P
D
0.40
A
(Note 3)
NSS60101DMR6T1G
NSS60101DMR6T2G
NSV60101DMR6T1G
NSV60101DMR6T2G
Junction and Storage Temperature Range
T , T
J
−55 to
+150
°C
SC−74
(Pb−Free)
3000/Tape &
Reel
stg
2
1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Dual Operation).
2. P per Transistor when both are turned on is one half of Total P or 0.53 Watts.
D
D
2
3. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Single−Operation).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2020 − Rev. 3
NSS60101DMR6/D
NSS60101DMR6
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 10 mA, I = 0)
V
60
80
6
V
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (Ic = 0.1 mA, I = 0)
V
V
E
Emitter−Base Breakdown Voltage (I = 0.1 mA, I = 0)
V
E
C
Collector Cutoff Current (V = 60 V, I = 0)
I
CBO
100
100
nA
nA
CB
E
Emitter Cutoff Current (V = 5.0 V)
I
EBO
BE
ON CHARACTERISTICS
DC Current Gain (Note 4)
h
FE
(I = 100 mA, V = 2 V)
200
150
70
250
250
200
100
320
290
110
335
335
310
295
C
CE
(I = 500 mA, V = 2 V)
C
CE
(I = 1 A, V = 2 V)
C
CE
(I = 1 mA, V = 5 V)
C
CE
(I = 100 mA, V = 5 V)
C
CE
(I = 500 mA, V = 5 V)
C
CE
(I = 1 A, V = 5 V)
C
CE
Collector−Emitter Saturation Voltage (Note 4)
(I = 100 mA, I = 1 mA)
V
V
CE(sat)
0.080
0.078
0.170
0.143
0.200
0.150
0.250
0.200
C
B
(I = 500 mA, I = 50 mA)
C
B
(I = 1 A, I = 50 mA)
C
B
(I = 1 A, I = 100 mA)
C
B
Base*Emitter Saturation Voltage (Note 4)
(I = 500 mA, I = 50 mA)
V
V
V
BE(sat)
0.87
0.91
0.94
1.50
1.50
1.60
C
B
(I = 1 A, I = 50 mA)
C
B
(I = 1 A, I = 100 mA)
C
B
Base−Emitter Turn−on Voltage (Note 4)
(I = 1 mA, V = 1 V)
V
BE(on)
0.27
0.57
0.76
C
CE
(I = 500 mA, V = 2 V)
0.90
C
CE
DYNAMIC CHARACTERISTICS
Input Capacitance
EB
C
100
8.0
pF
pF
ibo
(V = 1 V, f = 1.0 MHz)
Output Capacitance
C
obo
(V = 10 V, f = 1.0 MHz)
CB
Cutoff Frequency
f
T
200
MHz
(I = 50 mA, V = 2.0 V, f = 100 MHz)
C
CE
SWITCHING TIMES
Delay Time (V = 10 V, I = 0.5 A, I = 25 mA, I = −25 mA)
t
10
28
ns
ns
ns
ns
ns
ns
CC
C
B1
B2
d
ON Time (V = 10 V, I = 0.5 A, I = 25 mA, I = −25 mA)
t
on
CC
C
B1
B2
Rise Time (V = 10 V, I = 0.5 A, I = 25 mA, I = −25 mA)
t
r
18
CC
C
B1
B2
Storage Time (V = 10 V, I = 0.5 A, I = 25 mA, I = −25 mA)
t
622
709
87
CC
C
B1
B2
s
OFF Time (V = 10 V, I = 0.5 A, I = 25 mA, I = −25 mA)
t
off
CC
C
B1
B2
Fall Time (V = 10 V, I = 0.5 A, I = 25 mA, I = −25 mA)
t
f
CC
C
B1
B2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS60101DMR6
TYPICAL CHARACTERISTICS
600
500
400
300
600
V
CE
= 2 V
V
CE
= 5 V
150°C
150°C
500
400
300
125°C
85°C
125°C
85°C
25°C
25°C
200
200
−55°C
−55°C
100
0
100
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
18 mA
I
B
= 20 mA
I /I = 10
C
B
16 mA
14 mA
12 mA
10 mA
8.0 mA
6.0 mA
1
0.1
150°C
4.0 mA
125°C
−55°C
85°C
2.0 mA
25°C
0.01
0.001
0
1
2
3
4
5
6
0.01
0.1
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
Figure 4. Collector−Emitter Saturation Voltage
10
10
I /I = 20
I /I = 50
C B
C
B
150°C
150°C
1
0.1
1
0.1
125°C
85°C
125°C
85°C
25°C
25°C
−55°C
−55°C
0.1
0.01
0.001
0.01
0.001
0.01
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
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3
NSS60101DMR6
TYPICAL CHARACTERISTICS
10
I /I = 100
C
B
1.0
−55°C
1
0.1
125°C
150°C
25°C
85°C
125°C
0.5
−55°C
25°C
150°C
85°C
I /I = 10
C
B
0.01
0
0.001
0.01
0.1
1
10
10
7
0.001
0.01
0.1
1
10
10
30
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 7. Collector−Emitter Saturation Voltage
Figure 8. Base−Emitter Saturation Voltage
1.2
1.0
0.8
0.6
0.4
1.0
−55°C
25°C
−55°C
25°C
85°C
125°C
85°C
125°C
0.5
0
150°C
150°C
0.2
0
V
= 2 V
I /I = 20
CE
C
B
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. Base−Emitter “ON” Voltage
Figure 9. Base−Emitter Saturation Voltage
40
35
30
25
20
15
10
240
200
160
T = 25°C
f = 1 MHz
A
T = 25°C
f = 1 MHz
A
120
80
40
5
0
0
1
2
3
4
5
6
0
5
10
15
20
25
V
EB
, BASE−EMITTER VOLTAGE (V)
V
CB
, COLLECTOR−BASE REVERSE VOLTAGE (V)
Figure 11. Input Capacitance
Figure 12. Output Capacitance
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4
NSS60101DMR6
TYPICAL CHARACTERISTICS
10
1
1000
T = 25°C
CE
J
V
= 2 V
1s
100ms
10 ms 1 ms
f
= 100 MHz
test
100
10
1
0.01
0.001
1
10
100
1000
0.1
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I , COLLECTOR CURRENT (mA)
V
C
Figure 13. fT, Current Gain Bandwidth Product
Figure 16. Safe Operating Area (TA = 255C)
1000
100
10
Duty Cycle = 0.5
0.20
0.10
0.05
0.02
0.01
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 14. Thermal Resistance by Transistor
1000
Duty Cycle = 0.5
0.20
100
10
1
0.10
0.05
0.02
0.01
Single Pulse
0.00001
0.1
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 15. Thermal Resistance for Both Transistors
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
6
1
SCALE 2:1
DATE 08 JUN 2012
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
6
5
2
4
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
E
H
E
1
3
MILLIMETERS
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
DIM
A
A1
b
c
D
MIN
0.90
0.01
0.25
0.10
2.90
1.30
NOM
1.00
0.06
0.37
0.18
3.00
1.50
0.95
0.40
2.75
−
MAX
MIN
MAX
0.043
0.004
0.020
0.010
0.122
0.067
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
0.035
0.001
0.010
0.004
0.114
0.051
b
e
E
e
q
0°
10°
0°
10°
0.85
0.034
0.041
c
L
0.20
2.50
0.008
0.099
0.024
0.118
A
0.05 (0.002)
H
E
q
L
A1
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
2.4
0.094
XXX MG
G
0.95
0.037
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
1.9
0.074
0.95
0.037
0.7
0.028
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1.0
mm
inches
ǒ
Ǔ
SCALE 10:1
0.039
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
STYLE 4:
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
STYLE 6:
PIN 1. CATHODE
2. ANODE
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
3. CATHODE
4. CATHODE
5. ANODE
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. NO CONNECTION
5. COLLECTOR
6. BASE
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
6. CATHODE
6. COLLECTOR 1
STYLE 10:
STYLE 11:
PIN 1. EMITTER
2. BASE
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
4. COLLECTOR
5. ANODE
6. CATHODE
6. DRAIN 1
6. COLLECTOR 1
6. COLLECTOR 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42973B
SC−74
PAGE 1 OF 1
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