NSVBAS16W1T1G [ONSEMI]
超高速开关二极管 - 采用 SC-88 封装中的三配置;
| 型号： | NSVBAS16W1T1G |
| 厂家： | 
ONSEMI |
| 描述： | 超高速开关二极管 - 采用 SC-88 封装中的三配置 开关 测试 光电二极管 |
| 文件： | 总6页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16W1
Ultra High Speed
Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−88 package which is designed for low power surface mount
applications.
www.onsemi.com
Features
• Fast t , < 3.0 ns
rr
• Low C , < 2.0 pF
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
D
SC−88
CASE 419B
STYLE 15
6
5
4
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T = 25°C)
A
Rating
Reverse Voltage
Symbol
Value
100
100
200
300
1.0
Unit
V
V
R
1
2
3
Peak Reverse Voltage
V
RM
V
MARKING DIAGRAM
Forward Current (Note 1)
Peak Forward Current (Note 1)
I
F
mAdc
mAdc
Adc
I
FM
6
Peak Forward Surge Current (10 ms)
(Note 1)
I
FSM
RV M G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
1. This is maximum rating for a single diode. In the case of using 2 or 3 diodes,
the maximum ratings per diodes is 75% of the single diode.
RV = Specific Device Code
M
G
= Date Code
= Pb−Free Package
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Symbol
Max
300
Unit
mW
°C
(Note: Microdot may be in either location)
P
D
Junction Temperature
Storage Temperature
T
J
150
ORDERING INFORMATION
T
stg
−55 to +150
°C
†
Device
Package
Shipping
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BAS16W1T1G
SC−88
3000 /
(Pb−Free) Tape & Reel
SC−88 3000 /
(Pb−Free) Tape & Reel
NSVBAS16W1T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2019 − Rev. 1
BAS16W1/D
BAS16W1
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Symbol
Condition
Min
−
Max
0.1
0.5
1.0
0.72
0.85
1.0
1.2
−
Unit
Reverse Voltage Leakage Current
I
R
V
V
= 30 V
= 80 V
= 100 V
mAdc
R
R
−
V
R
−
Forward Voltage
V
F
I = 1 mA
F
−
Vdc
I = 10 mA
F
−
I = 50 mA
F
−
I = 100 mA
F
−
Reverse Breakdown Voltage
Diode Capacitance
V
C
I
R
= 100 mA
100
−
Vdc
pF
R
V
R
= 0, f = 1.0 MHz
2.0
3.0
D
Reverse Recovery Time (Figure 1)
t
(Note 2)
I = 10 mA, V = 6.0 V,
−
ns
rr
F
R
R = 100 W, I = 0.1 I
L
rr
R
2. t Test Circuit
rr
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2
BAS16W1
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
t
r
t
p
t
rr
I
F
t
10%
R
L
I
rr
= 0.1 I
R
A
90%
t = 2 ms
I = 10 mA
F
V
R
= 6 V
V
R
p
R = 100 W
L
t = 0.35 ns
r
Figure 1. Reverse Recovery Time Equivalent Test Circuit
100
10
10
T = 150°C
A
T = 125°C
A
1.0
T = 85°C
A
T = 85°C
A
0.1
0.01
T = 25°C
A
1.0
0.1
T = 55°C
A
T = -ꢂ40°C
A
T = 25°C
A
0.001
0.2
0.4
0.6 0.8
V , FORWARD VOLTAGE (VOLTS)
1.0
1.2
0
10
20 30
V , REVERSE VOLTAGE (VOLTS)
40
50
F
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
V , REVERSE VOLTAGE (VOLTS)
6
8
R
Figure 4. Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXMG
6X
0.66
G
1
2.50
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. ANODE 2
2. N/C
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1. ANODE
2. ANODE
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
3. COLLECTOR
3. CATHODE 1
4. ANODE 1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR 2
6. ANODE
6. CATHODE
6. CATHODE 2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
4. SOURCE 1
5. DRAIN 1
6. GATE 2
4. DRAIN 1
5. DRAIN 2
6. GATE 2
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
5. BASE 2
6. COLLECTOR 2
STYLE 13:
PIN 1. ANODE
2. N/C
STYLE 14:
PIN 1. VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1. VIN1
2. VCC
PIN 1. ANODE 1
2. ANODE 2
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE 3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
5. EMITTER 1
6. COLLECTOR 1
5. EMITTER 2
6. COLLECTOR 1
6. CATHODE
STYLE 19:
PIN 1. I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1. ANODE 1
2. N/C
STYLE 22:
PIN 1. D1 (i)
2. GND
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
STYLE 24:
PIN 1. CATHODE
2. ANODE
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE 2
4. CATHODE 2
5. N/C
3. D2 (i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2 (c)
5. VBUS
6. D1 (c)
4. N/C
5. V EN
5. CH2
6. N/C
6. V REF
6. CATHODE 1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1. ANODE
2. ANODE
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR 1
6. DRAIN 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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