NSVBAS21XV2T5G [ONSEMI]

250V Switching Diode;


型号：	NSVBAS21XV2T5G
厂家：	ONSEMI
描述：	250V Switching Diode
文件：	总4页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

High Voltage

Switching Diode

BAS21XV2

The BAS21XV2 Switching Diode is a spin−off of our popular

SOT−23 three−leaded device. It is designed for switching applications

and is housed in the SOD−523 surface mount package. This device is

ideal for low−power surface mount applications, where board space is

at a premium.

www.onsemi.com

HIGH VOLTAGE

SWITCHING DIODE

Features

• Extremely Small SOD−523 Package

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

CATHODE

ANODE

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING

DIAGRAM

MAXIMUM RATINGS

Rating

Symbol

Value

250

200

625

500

Unit

Vdc

SOD−523

CASE 502

Continuous Reverse Voltage

Repetitive Peak Reverse Voltage

Continuous Forward Current

Peak Forward Surge Current

RRM

Vdc

XX = Specific Device Code

= Date Code

mAdc

FM(surge)

Repetitive Peak Forward Current

(Pulse Wave = 1 sec, Duty Cycle = 66%)

FRM

ORDERING INFORMATION

Non−Repetitive Peak Forward Current

†

FSM

Device

Package

Shipping

(Square Wave, T = 25°C prior to surge)

t = 1 ꢀ s

t = 1 ms

t = 1 s

5.0

2.0

0.5

BAS21XV2T5G

SOD−523 8000 / Tape &

(Pb−Free) Reel

NSVBAS21XV2T5G

SOD−523 8000 / Tape &

(Pb−Free) Reel

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Total Device Dissipation FR−5 Board

T = 25°C

250

500

Thermal Resistance Junction−to−Ambient

(Note 1)

°C/W

ꢁ

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single

sided. Operating to steady state.

Publication Order Number:

August, 2021 − Rev. 1

BAS21XV2/D

BAS21XV2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

(V = 200 Vdc)

0.01

0.1

100

ꢀ

(V = 200 Vdc, T = 150°C)

Reverse Breakdown Voltage

(BR)

(I = 100 ꢀ Adc)

250

−

Vdc

Forward Voltage

(I = 100 mAdc)

−

1000

1250

(I = 200 mAdc)

Diode Capacitance

(V = 0, f = 1.0 MHz)

−

5.0

Reverse Recovery Time

(I = I = 30 mAdc, R = 100 ꢂ)

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

820

ꢂ

+10 V

2.0 k

0.1 ꢀ F

100 ꢀ H

10%

90%

0.1 ꢀ F

D.U.T.

= 3.0 mA

R(REC)

50 ꢂ OUTPUT

PULSE

50 ꢂ INPUT

SAMPLING

OUTPUT PULSE

(I = I = 30 mA; MEASURED

GENERATOR

OSCILLOSCOPE

INPUT SIGNAL

at i

= 3.0 mA)

R(REC)

Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 30 mA.

Notes: 2. Input pulse is adjusted so I

is equal to 30 mA.

R(peak)

Notes: 3. t » t

Figure 1. Recovery Time Equivalent Test Circuit

www.onsemi.com

BAS21XV2

TYPICAL CHARACTERISTICS

100

150°C

125°C

−40°C

0.1

75°C

0°C

0.1

25°C

0°C

0.01

75°C

125°C

0.001

150°C

−40°C

0.001

0.0001

100

150

200

250

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V , REVERSE VOLTAGE (V)

V , FORWARD VOLTAGE (V)

Figure 1. Forward Voltage

Figure 2. Reverse Current

3.0

T = 25°C

f = 1 MHz

2.5

2.0

1.5

1.0

0.5

V , REVERSE VOLTAGE (V)

Figure 3. Total Capacitance

www.onsemi.com

BAS21XV2

PACKAGE DIMENSIONS

SOD−523

CASE 502−01

ISSUE E

−X−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

−Y−

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-

TRUSIONS, OR GATE BURRS.

2X b

MILLIMETERS

0.08

X Y

DIM

MIN

0.50

0.25

0.07

1.10

0.70

1.50

NOM

0.60

0.30

0.14

1.20

0.80

1.60

0.30 REF

0.20

MAX

0.70

0.35

0.20

1.30

0.90

1.70

TOP VIEW

0.15

0.25

H_E

RECOMMENDED

SOLDERING FOOTPRINT*

SIDE VIEW

1.80

0.48

0.40

PACKAGE

OUTLINE

DIMENSION: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

BOTTOM VIEW

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