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NSVBCH817-25L [ONSEMI]

General Purpose Transistors;
NSVBCH817-25L
型号： NSVBCH817-25L
厂家： ONSEMI    ONSEMI
描述：

General Purpose Transistors
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General Purpose  
Transistors  
NPN Silicon  
BCH817-16L/25L/40L,  
NSVBCH817-16L/25L/40L  
www.onsemi.com  
Features  
• 175°C T  
− Rated for High Temperature, Mission Critical  
J(max)  
Applications  
COLLECTOR  
3
• NSV Prefixes for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
1
BASE  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
45  
Unit  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
V
CEO  
V
CBO  
V
EBO  
V
V
3
50  
1
5.0  
500  
1
V
2
Collector Current − Continuous  
Collector Current − Peak  
I
C
mAdc  
A
SOT−23  
CASE 318  
STYLE 6  
I
CM  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board,  
P
D
MARKING DIAGRAM  
(Note 1) T = 25°C  
225  
1.3  
mW  
mW/°C  
A
Derate above 25°C  
XXX M G  
Thermal Resistance,  
R
400  
°C/W  
q
JA  
Junction−to−Ambient  
G
1
Total Device Dissipation  
P
D
Alumina Substrate, (Note 2)  
T = 25°C  
300  
1.8  
mW  
mW/°C  
XXX = Device Code  
A
Derate above 25°C  
M
= Date Code*  
G
= Pb−Free Package  
Thermal Resistance,  
R
330  
°C/W  
q
JA  
Junction−to−Ambient  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Junction and Storage Temperature  
T , T  
−55 to +175  
°C  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
ORDERING INFORMATION  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
February, 2020 − Rev. 0  
BCH817−16LT1/D  
 
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Breakdown Voltage  
V
45  
50  
−
−
−
−
−
−
V
V
V
(BR)CEO  
(I = 10 mA)  
C
Collector−Emitter Breakdown Voltage  
V
(BR)CES  
(V = 0, I = 10 mA)  
EB  
C
Emitter−Base Breakdown Voltage  
V
5.0  
(BR)EBO  
(I = 1.0 mA)  
E
Collector Cutoff Current  
I
CBO  
(V = 20 V)  
−
−
−
−
100  
5.0  
nA  
mA  
CB  
(V = 20 V, T = 150°C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
−
(I = 100 mA, V = 1.0 V) BCH817−16, NSVBCH817−16*  
100  
160  
250  
40  
−
−
−
−
250  
400  
600  
−
C
CE  
BCH817−25, NSVBCH817−25*  
BCH817−40, NSVBCH817−40  
(I = 500 mA, V = 1.0 V)  
C
CE  
Collector−Emitter Saturation Voltage  
(I = 500 mA, I = 50 mA)  
V
−
−
0.7  
V
V
CE(sat)  
C
B
Base−Emitter On Voltage  
(I = 500 mA, V = 1.0 V)  
V
BE(on)  
−
−
1.2  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
Current−Gain − Bandwidth Product  
f
100  
−
−
−
MHz  
pF  
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance  
(V = 10 V, f = 1.0 MHz)  
C
−
10  
obo  
CB  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
ORDERING INFORMATION  
†
Device  
BCH817−16LT1G**  
NSVBCH817−16LT1G**  
BCH817−25LT1G**  
NSVBCH817−25LT1G**  
BCH817−40LT1G  
Specific Marking  
Package  
Shipping  
SOT−23  
(Pb−Free)  
XXX  
3000 / Tape & Reel  
SOT−23  
(Pb−Free)  
XXX  
6X  
3000 / Tape & Reel  
3000 / Tape & Reel  
SOT−23  
(Pb−Free)  
NSVBCH817−40LT1G  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP  
Capable  
**Device release available upon request − Please contact ON Semiconductor sales.  
www.onsemi.com  
2
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
TYPICAL CHARACTERISTICS − BCH817−16L, NSVBCH817−16L  
300  
200  
1
I /I = 10  
C
B
V
CE  
= 1 V  
150°C  
25°C  
150°C  
25°C  
−55°C  
0.1  
−55°C  
100  
0
0.01  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 1. DC Current Gain vs. Collector  
Current  
Figure 2. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.1  
1.2  
1.1  
1.0  
0.9  
V
CE  
= 5 V  
−55°C  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I /I = 10  
C
B
25°C  
−55°C  
25°C  
0.8  
0.7  
0.6  
0.5  
0.4  
150°C  
150°C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
1
0.0001  
0.001  
0.01  
0.1  
1
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 3. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 4. Base Emitter Voltage vs. Collector  
Current  
www.onsemi.com  
3
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
TYPICAL CHARACTERISTICS − BCH817−16L, NSVBCH817−16L  
1.0  
0.8  
0.6  
0.4  
+1  
T = 25°C  
J
q
for V  
CE(sat)  
VC  
0
-1  
-2  
I
C
= 10 mA  
100 mA 300 mA  
500 mA  
q
for V  
BE  
VB  
0.2  
0
0.01  
0.1  
1
I , BASE CURRENT (mA)  
10  
100  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
B
Figure 5. Saturation Region  
Figure 6. Temperature Coefficients  
100  
C
ib  
10  
C
ob  
1
0.1  
1
10  
100  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 7. Capacitances  
www.onsemi.com  
4
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
TYPICAL CHARACTERISTICS − BCH817−25L, NSVBCH817−25L  
500  
400  
300  
200  
1
I /I = 10  
C
B
V
CE  
= 1 V  
150°C  
150°C  
25°C  
25°C  
0.1  
−55°C  
−55°C  
100  
0
0.01  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 8. DC Current Gain vs. Collector  
Current  
Figure 9. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.1  
1.2  
1.1  
1.0  
0.9  
−55°C  
V
CE  
= 5 V  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I /I = 10  
C
B
25°C  
−55°C  
25°C  
150°C  
0.8  
0.7  
0.6  
0.5  
0.4  
150°C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
1
0.0001  
0.001  
0.01  
0.1  
1
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 10. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 11. Base Emitter Voltage vs. Collector  
Current  
1000  
V
CE  
= 1 V  
T = 25°C  
A
100  
10  
0.1  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
Figure 12. Current Gain Bandwidth Product  
vs. Collector Current  
www.onsemi.com  
5
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
TYPICAL CHARACTERISTICS − BCH817−25L, NSVBCH81725L  
1.0  
0.8  
0.6  
0.4  
+1  
T = 25°C  
J
q
for V  
CE(sat)  
VC  
0
-1  
-2  
I
C
= 10 mA  
100 mA 300 mA  
500 mA  
q
for V  
BE  
VB  
0.2  
0
0.01  
0.1  
1
I , BASE CURRENT (mA)  
10  
100  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
B
Figure 13. Saturation Region  
Figure 14. Temperature Coefficients  
100  
C
ib  
10  
C
ob  
1
0.1  
1
10  
100  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 15. Capacitances  
www.onsemi.com  
6
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
TYPICAL CHARACTERISTICS − BCH817−40L, NSVBCH817−40L  
700  
600  
1
I /I = 10  
C
B
150°C  
V
CE  
= 1 V  
150°C  
500  
400  
300  
200  
25°C  
0.1  
25°C  
−55°C  
−55°C  
0.01  
100  
0
0.001  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 16. DC Current Gain vs. Collector  
Current  
Figure 17. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.1  
1.2  
1.1  
1.0  
0.9  
−55°C  
V
CE  
= 5 V  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I /I = 10  
C
B
−55°C  
25°C  
25°C  
0.8  
0.7  
0.6  
0.5  
0.4  
150°C  
150°C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
1
0.0001  
0.001  
0.01  
0.1  
1
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 18. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 19. Base Emitter Voltage vs. Collector  
Current  
1000  
V
CE  
= 1 V  
T = 25°C  
A
100  
10  
0.1  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
Figure 20. Current Gain Bandwidth Product  
vs. Collector Current  
www.onsemi.com  
7
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
TYPICAL CHARACTERISTICS − BCH817−40L, NSVBCH817−40L  
1.0  
0.8  
0.6  
0.4  
+1  
T = 25°C  
J
q
for V  
CE(sat)  
VC  
0
-1  
-2  
I
C
= 10 mA  
100 mA 300 mA  
500 mA  
q
for V  
BE  
VB  
0.2  
0
0.01  
0.1  
1
I , BASE CURRENT (mA)  
10  
100  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
B
Figure 21. Saturation Region  
Figure 22. Temperature Coefficients  
100  
C
ib  
10  
C
ob  
1
0.1  
1
10  
100  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 23. Capacitances  
www.onsemi.com  
8
BCH817−16L/25L/40L, NSVBCH817−16L/25L/40L  
TYPICAL CHARACTERISTICS − BCH817−16L, NSVBCH817−16L, BCH817−25L, NSVBCH817−25L,  
BCH817−40L, NSVBCH817−40L  
1
1 ms  
10 ms  
100 ms  
1 s  
Thermal Limit  
0.1  
0.01  
Single Pulse Test @ T = 25°C  
A
0.001  
0.01  
0.1  
1
10  
100  
V
CE  
(Vdc)  
Figure 24. Safe Operating Area  
www.onsemi.com  
9
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AS  
DATE 30 JAN 2018  
SCALE 4:1  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
L1  
A
H
E
T
c
A1  
SEE VIEW C  
SIDE VIEW  
GENERIC  
MARKING DIAGRAM*  
END VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT  
XXXMG  
G
1
3X  
0.90  
XXX = Specific Device Code  
2.90  
M
= Date Code  
G
= Pb−Free Package  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “ G”,  
may or may not be present.  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
STYLE 1 THRU 5:  
CANCELLED  
STYLE 6:  
STYLE 7:  
PIN 1. EMITTER  
2. BASE  
STYLE 8:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
PIN 1. ANODE  
2. NO CONNECTION  
3. CATHODE  
3. COLLECTOR  
STYLE 9:  
PIN 1. ANODE  
2. ANODE  
STYLE 10:  
STYLE 11:  
STYLE 12:  
STYLE 13:  
PIN 1. SOURCE  
2. DRAIN  
STYLE 14:  
PIN 1. CATHODE  
2. GATE  
PIN 1. DRAIN  
2. SOURCE  
3. GATE  
PIN 1. ANODE  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
2. CATHODE  
3. CATHODE−ANODE  
3. CATHODE  
3. GATE  
3. ANODE  
STYLE 15:  
STYLE 16:  
STYLE 17:  
PIN 1. NO CONNECTION  
2. ANODE  
STYLE 18:  
STYLE 19:  
STYLE 20:  
PIN 1. GATE  
2. CATHODE  
3. ANODE  
PIN 1. ANODE  
2. CATHODE  
3. CATHODE  
PIN 1. NO CONNECTION PIN 1. CATHODE  
PIN 1. CATHODE  
2. ANODE  
3. GATE  
2. CATHODE  
3. ANODE  
2. ANODE  
3. CATHODE−ANODE  
3. CATHODE  
STYLE 21:  
STYLE 22:  
STYLE 23:  
PIN 1. ANODE  
2. ANODE  
STYLE 24:  
STYLE 25:  
STYLE 26:  
PIN 1. GATE  
2. SOURCE  
3. DRAIN  
PIN 1. RETURN  
2. OUTPUT  
3. INPUT  
PIN 1. GATE  
2. DRAIN  
PIN 1. ANODE  
2. CATHODE  
3. GATE  
PIN 1. CATHODE  
2. ANODE  
3. SOURCE  
3. NO CONNECTION  
3. CATHODE  
STYLE 27:  
STYLE 28:  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
PIN 1. ANODE  
2. ANODE  
3. ANODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42226B  
SOT−23 (TO−236)  
PAGE 1 OF 1  
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SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

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VISHAY

SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

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SI9135_11

 SMBus Multi-Output Power-Supply Controller

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SI9136_11

 Multi-Output Power-Supply Controller

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SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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VISHAY
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