NSVG1001MXTAG [ONSEMI]
Middle power SPDT RF switch, 8.5GHz, 1.6V;
| 型号： | NSVG1001MXTAG |
| 厂家： | 
ONSEMI |
| 描述： | Middle power SPDT RF switch, 8.5GHz, 1.6V 光电二极管 |
| 文件： | 总6页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
RF SPDT Switch MMIC
NSG1001MX, NSVG1001MX
This device is single pole dual throw (SPDT) type RF antenna
switch MMIC. It has low insertion loss and high isolation. This is
designed for wireless communication applications such as WLAN and
V2X.
XDFNW
MX SUFFIX
CASE 717AE
It adopts a small surface mount package and it is also suitable for
portable devices such as smart phones and automotive antennas.
ELECTRICAL CONNECTION
Features
1 : OUT1
2 : GND
3 : OUT2
6 : CTL1
5 : IN
4 : CTL2
Broadband Frequency Range 0.1 to 8.5 GHz
Capable of 1.6 V Operation
Low Insertion Loss / High Isolation / Middle Power
Small and Thin−sized Package − 1.0 x 1.0 x 0.43 mm
Wettable Flank Package for Optimal Automated Optical
Inspection (AOI)
MARKING DIAGRAM
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
6
AAM
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
Compliant
AA = Specific Device Code
= Date Code
M
Typical Applications
IEEE802.11 a/b/g/n/ac/ax WLAN, Bluetooth Systems
LTE & Wireless Communication Applications
Automotive V2X and E−TOLL Applications
ORDERING INFORMATION
†
Device
Package
Shipping
NSG1001MXTAG
X2DFNW6
(Pb−Free)
3000 /
Tape & Reel
MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
Parameter
Control Voltage
Symbol
Value
6
Unit
V
NSVG1001MXTAG
X2DFNW6
(Pb−Free)
3000 /
Tape & Reel
V
CTL
Input Power 5 V, CW
P
30
dBm
C
in
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Storage Temperature Range
Operating Temperature Range
T
stg
−55 to +150
−40 to +125
T
opr
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TRUTH TABLE
On Path
V
CTL1
V
CTL2
IN − OUT1
IN − OUT2
Low
High
Low
High
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
August, 2022 − Rev. 1
NSG1001MX/D
NSG1001MX, NSVG1001MX
ELECTRICAL CHARACTERISTICS at T = 25C Control Voltage: 0/+2.7 V, DC Blocking Capacitor 5.0 pF
A
Value
Min
Typ
0.40
0.50
0.65
31.0
29.5
20.0
25.0
20.0
18.0
27.0
27.0
100
Max
0.55
0.65
0.85
Parameter
Insertion Loss
Symbol
Path
Condition
f = 2.5 GHz
f = 6.0 GHz
f = 8.5 GHz
f = 2.5 GHz
f = 6.0 GHz
f = 8.5 GHz
f = 2.5 GHz
f = 6.0 GHz
f = 8.5 GHz
f = 2.5 GHz
f = 6.0 GHz
Unit
IL
IN to OUT1, OUT2
dB
Isolation
ISL
RL
IN to OUT1, OUT2
28.0
26.5
17.0
dB
dB
Return Loss
0.1 dB Compression Input Power
Pin 0.1 dB
IN to OUT1, OUT2
25.0
25.0
dBm
Switching Time
50% VCTL to 90/10% RF
ns
Switching Control Current
I
No Signal
2.0
5.0
mA
CTL
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
TEST CIRCUIT
1 : OUT1
2 : GND
6 : CTL1
5 : IN
1 pF
5 pF
5 pF
5 pF
3 : OUT2
4 : CTL2
1 pF
www.onsemi.com
2
NSG1001MX, NSVG1001MX
ELECTRICAL CHARACTERISTICS
0.0
0.0
0
0
−0.2
−0.2
−5
−5
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
−10
−15
−20
−25
−30
−35
−40
−10
−15
−20
−25
−30
−35
−40
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
2
2.5
3
3.5
4
4.5
5 5.5 6 6.5
7 7.5 8 8.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Insertion Loss, Isolation vs Frequency
Figure 2. Insertion Loss, Isolation vs Frequency
IN−OUT1 ON, CTL1 = 0 V, CTL2 = 2.7 V
IN−OUT2 ON, CTL1 = 2.7 V, CTL2 = 0 V
0
−10
−20
−30
−40
−50
−60
0
−10
IN−Port
OUT1−Port
−20
−30
−40
−50
−60
OUT1−Port
IN−Port
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
2
2.5
3
3.5
4
4.5
5 5.5 6 6.5 7 7.5
8 8.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Return Loss vs Frequency
Figure 4. Return Loss vs Frequency
IN−OUT1 ON, CTL1 = 0 V, CTL2 = 2.7 V
IN−OUT2 ON, CTL1 = 2.7 V, CTL2 = 0 V
30
28
26
24
22
20
18
16
14
30
28
26
24
22
20
18
16
14
0.0
0.0
Vctl(H) = 2.7 V
Vctl(H) = 1.6 V
Vctl(H) = 2.7 V
Vctl(H) = 1.6 V
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
INPUT POWER (dBm)
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
INPUT POWER (dBm)
Figure 5. Output power, Insertion Loss vs Input Power Figure 6. Output power, Insertion Loss vs Input Power
Freq = 2.5 GHz, IN−OUT1 ON Freq = 2.5 GHz, IN−OUT2 ON
www.onsemi.com
3
NSG1001MX, NSVG1001MX
ELECTRICAL CHARACTERISTICS
30
28
26
24
22
20
18
16
14
30
0.0
0.0
Vctl(H) = 2.7 V
Vctl(H) = 1.6 V
28
−0.2
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
26
−0.4
−0.6
−0.8
−1.0
−1.2
24
22
20
18
16
14
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
INPUT POWER (dBm)
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
INPUT POWER (dBm)
Figure 7. Output power, Insertion Loss vs Input Power Figure 8. Output power, Insertion Loss vs Input Power
Freq = 6.0 GHz, IN−OUT1 ON
Freq = 6.0 GHz, IN−OUT2 ON
Bluetooth and the Bluetooth logo are registered trademarks of Bluetooth SIG.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFNW6 1.0x1.0, 0.35P
CASE 717AE
ISSUE B
DATE 06 MAY 2022
GENERIC
MARKING DIAGRAM*
XXM
XX
M
= Specific Device Code
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12427H
XDFNW6 1.0x1.0, 0.35P
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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