NSVJ6904DSB6T1G [ONSEMI]
N 沟道 JFET,-25 V,20 至 40 mA,40 mS,双路;型号: | NSVJ6904DSB6T1G |
厂家: | ONSEMI |
描述: | N 沟道 JFET,-25 V,20 至 40 mA,40 mS,双路 放大器 光电二极管 晶体管 |
文件: | 总6页 (文件大小:233K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N-Channel JFET
−25 V, 20 to 40 mA, 40 mS, Dual
NSVJ6904DSB6
The NSVJ6904DSB6 is a composite type of JFET designed for
compact size and high efficiency which can achieve high gain
performance. This AEC−Q101 qualified and PPAP capable device is
suited for automotive applications.
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ELECTRICAL CONNECTION
Features
N−Channel
• Large | yfs |
• Small Ciss
• Ultralow Noise Figure
• CPH6 Package is Pin−Compatible with SC−74
• AEC−Q101 Qualified and PPAP Capable
• Mounting Area is Greatly Reduced by Incorporating Two JFETs of
the NSVJ3910SB3 in One Package of CPH6 Compared with Using
Two Separate Packages
6
1
5
4
1 : Drain 1
2 : NC
3 : Drain 2
4 : Gate 2
5 : Source 1 / Source 2
6 : Gate 1
2
3
Typical Applications
MARKING
DIAGRAM
• AM Tuner RF Amplification
• Low Noise Amplifier
Specifications
6
5
4
ABSOLUTE MAXIMUM RATINGS (T = 25°C)
a
1
2
3
CPH6
Symbo
l
Parameter
Drain to Source Voltage
Value
25
Unit
V
CASE 318BD
V
DSX
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 4 of this data sheet.
Gate to Drain Voltage
V
−25
10
V
GDS
Gate Current
I
G
mA
mA
mW
mW
Drain Current
I
D
50
Allowable Power Dissipation 1 unit
Total Power Dissipation
Operating Junction and Storage Temperature
P
400
700
D
P
T
T
T
−55 to +150 °C
J, Stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
July, 2019 − Rev. 1
NSVJ6904DSB6/D
NSVJ6904DSB6
ELECTRICAL CHARACTERISTICS (T = 25°C, (Note 1))
J
Characteristic
Gate to Drain Breakdown Voltage
Gate to Source Leakage Current
Cutoff Voltage
Symbol
Conditions
I = −10 mA, V = 0 V
G
Min
−25
−
Typ
−
Max
−
Unit
V
V
(BR)GDS
DS
I
V
GS
= −10 V, V = 0 V
−
−1.0
−1.8
40
−
nA
V
GSS
DS
V
GS(off)
V
DS
= 5 V, I = 100 mA
−0.6
20
30
−
−1.2
−
D
Zero−Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
I
V
DS
= 5 V, V = 0 V
mA
mS
pF
pF
dB
DSS
GS
| yfs |
Ciss
Crss
NF
V
= 5 V, V = 0 V, f = 1 kHz
40
6.0
2.3
2.1
DS
GS
V
DS
= 5 V, V = 0 V, f = 1 MHz
−
GS
Reverse Transfer Capacitance
Noise Figure
−
−
V
= 5 V, V = 0 V, f = 100 MHz
−
2.8
DS
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. The specifications shown above are for each individual JFET.
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2
NSVJ6904DSB6
CHARACTERISTICS
40
30
25
20
15
10
V
= 0 V
GS
35
V
GS
= 0 V
−1.0 V
30
25
20
15
−0.2 V
−0.4 V
−0.2 V
−1.0 V
−0.4 V
−0.6 V
−0.8 V
−0.6 V
−0.8 V
10
5
5
0
0
0
0.5
1.0
1.5
2.0
0
2
4
6
8
DS
10
DRAIN−TO−SOURCE VOLTAGE, V − V
DRAIN−TO−SOURCE VOLTAGE, V − V
DS
Figure 1. ID − VDS
Figure 2. ID − VDS
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
V
DS
= 5 V
V
DS
= 5 V
Ta = −25°C
I
= 40 mA
DSS
25°C
75°C
30 mA
20 mA
5
0
0
−2.0
−1.5
−1.0
−0.5
0
0.5
−2.0
−1.5
−1.0
−0.5
0
0.5
GATE−TO−SOURCE VOLTAGE, V − V
GATE−TO−SOURCE VOLTAGE, V − V
GS
GS
Figure 3. ID − VGS
Figure 4. ID − VGS
100
100
V
V
= 5 V
= 0 V
DS
V
= 5 V
DS
7
5
GS
f = 1 kHz
= 30 mA
7
5
f = 1 kHz
I
DSS
3
2
10
3
2
7
5
3
2
10
10
1.0
1.0
2
3
5
7
2
3
5
7
2
3
5
7
10
100
100
DRAIN CURRENT, I − mA
DRAIN CURRENT, I
− mA
D
DSS
Figure 5. | yfs | − ID
Figure 6. | yfs | − IDSS
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3
NSVJ6904DSB6
CHARACTERISTICS
10
10
V
= 0 V
V
= 5 V
= 100 mA
GS
DS
7
5
f = 1 MHz
I
D
7
5
3
2
1.0
3
2
7
5
3
2
1.0
1.0
0.1
10
2
3
5
7
2
3
5
7
2
3
5
7
100
100
10
DRAIN CURRENT, I
− mA
DRAIN−TO−SOURCE VOLTAGE, V − V
DSS
DS
Figure 7. VGS(off) − IDSS
Figure 8. Ciss − VGDS
10
800
V
GS
= 0 V
P
T
f = 1 MHz
700
600
500
400
300
200
7
5
1 unit
3
2
100
0
1.0
1.0
2
3
5
7
2
3
5
7
100
0
20
40
60
80
100 120 140 160
10
DRAIN−TO−SOURCE VOLTAGE, V − V
AMBIENT TEMPERATURE, Ta − °C
DS
Figure 9. Crss − VDS
Figure 10. PD, PT − Ta
ORDERING INFORMATION
Device Order Number
†
Specific Device Marking
Package Type
Shipping
NSVJ6904DSB6T1G
1P
CPH6
3,000 / Tape & Reel
(Pb−Free / Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
CPH6
CASE 318BD
ISSUE O
DATE 30 NOV 2011
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON65440E
CPH6
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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