NSVMMBT5401M3T5G [ONSEMI]

150 V，60 mA，低饱和压，PNP 晶体管，SOT-723;


型号：	NSVMMBT5401M3T5G
厂家：	ONSEMI
描述：	150 V，60 mA，低饱和压，PNP 晶体管，SOT-723 晶体管
文件：	总7页 (文件大小：218K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBT5401M3

High Voltage Transistor

PNP Silicon

The MMBT5401M3 device is a spin−off of our popular SOT−23

three−leaded device. It is designed for general purpose amplifier

applications and is housed in the SOT−723 surface mount package.

This device is ideal for low−power surface mount applications where

board space is at a premium.

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Features

SOT−723

CASE 631AA

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

COLLECTOR

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

BASE

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−150

−160

−5.0

−60

Unit

Vdc

CEO

CBO

EBO

EMITTER

Vdc

MARKING DIAGRAM

Collector Current − Continuous

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

RJ M

THERMAL CHARACTERISTICS

= Specific Device Code

= Date Code

Characteristic

Symbol

Max

Unit

Total Device Dissipation

130

FR−5 Board (Note 1)

T = 25°C

Derate Above 25°C

1.0

mW/°C

°C/W

ORDERING INFORMATION

Thermal Resistance,

Junction−to−Ambient (Note 1)

470

†

Device

Shipping

Package

MMBT5401M3T5G

8000 / Tape &

Reel

SOT−723

(Pb−Free)

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. FR−5 @ 100 mm , 1.0 oz. copper traces, still air.

NSVMMBT5401M3T5G

8000 / Tape &

Reel

SOT−723

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

June, 2019 − Rev. 1

MMBT5401M3/D

MMBT5401M3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I = −1.0 mA, I = 0)

(BR)CEO

(BR)CBO

(BR)EBO

−150

−160

−5.0

−

Collector−Base Breakdown Voltage

(I = −100 mA, I = 0)

Emitter−Base Breakdown Voltage

(I = −10 mA, I = 0)

−

Collector−Base Cutoff Current

(V = −120 V, I = 0)

CBO

−1.6

−0.20

−100

Emitter Cutoff Current

(V = −5 V)

EBO

−

ON CHARACTERISTICS

DC Current Gain

−

(I = −1.0 mA, V = −5.0 V)

−

240

−

(I = −10 mA, V = −5.0 V)

(I = −50 mA, V = −5.0 V)

Collector−Emitter Saturation Voltage

(I = −10 mA, I = −1.0 mA)

CE(sat)

−

−0.09

−0.15

−0.25

−0.60

(I = −50 mA, I = −5.0 mA)

Base−Emitter Saturation Voltage

(I = −10 mA, I = −1.0 mA)

BE(sat)

−

−0.76

−0.92

−1.0

(I = −50 mA, I = −5.0 mA)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

MHz

−

(I = −10 mA, V = −5.0 V, f = 100 MHz)

100

−

180

12.5

1.5

−

300

Input Capacitance

ibo

(V = −3 V, I = 0, f = 1.0 MHz)

Output Capacitance

(V = −10 V, I = 0, f = 1.0 MHz)

obo

−

6.0

200

8.0

Small Signal Current Gain

(I = −1.0 mA, V = −10 V, f = 1.0 kHz)

Noise Figure

(I = −200 mA, V = −5.0 V, R = 10 W, f = 1.0 kHz)

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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MMBT5401M3

TYPICAL CHARACTERISTICS

180

160

140

120

100

180

= 2 V

= 5 V

+150°C

160

140

120

100

+125°C

+85°C

+25°C

−55°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 1. DC Current Gain

Figure 2. DC Current Gain

1.6

1.4

1.2

1.0

0.8

0.6

0.4

40 mA

I /I = 10

50 mA

60 mA

30 mA

20 mA

10 mA

+150°C

= 1.0 mA

0.2

+125°C

−55°C

+85°C

+25°C

0.2

0.02

0.0001

0.005

0.05

0.5

0.001

0.01

0.1

I , BASE CURRENT (mA)

I , COLLECTOR CURRENT (A)

Figure 3. Collector Saturation Region

Figure 4. Collector−Emitter Saturation Region

+150°C

−55°C

I /I = 20

I /I = 50

C B

+150°C

+25°C

+125°C

0.1

+25°C

+85°C

−55°C

+85°C

0.01

0.0001

0.01

0.0001

0.001

0.01

0.1

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 5. Collector−Emitter Saturation Region

Figure 6. Collector−Emitter Saturation Region

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MMBT5401M3

1.0

0.8

0.6

0.4

1.0

−55°C

0.8

0.6

0.4

0.2

+25°C

+85°C

+25°C

+85°C

+150°C

+125°C

0.2

I /I = 20

I /I = 10

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 7. Base−Emitter Saturation Voltage

Figure 8. Base−Emitter Saturation Voltage

1.0

T = 25°C

−55°C

f = 1 MHz

0.8

0.6

0.4

0.2

+25°C

+85°C

+150°C

+125°C

= 2 V

0.2

0.0001

0.001

0.01

0.1

−1

−2

−3

−4

−5

I , COLLECTOR CURRENT (A)

, BASE−EMITTER VOLTAGE (V)

Figure 9. Base−Emitter “ON” Voltage

Figure 10. Input Capacitance

1000

T = 25°C

f = 1 MHz

= −5 V

= 100 MHz

test

100

−5

−10

−15

−20

−25

−30

I , COLLECTOR CURRENT (A)

100

, COLLECTOR−BASE REVERSE VOLTAGE (V)

Figure 11. Output Capacitance

Figure 12. Current Gain Bandwidth Product

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MMBT5401M3

20000

15000

20000

t @ V = 120 V

15000

t @ V = 120 V

10000

5000

10000

5000

t @ V = 30 V

t @ V = 120 V

t @ V = 30 V

0.1

100

0.1

100

I , COLLECTOR CURRENT (mA)

Figure 13. Turn−On Time

Figure 14. Turn−Off Time

+ꢀ8.8 V

-30, -120 V

10.2 V

1 s

100 ms 10 ms 1 ms

100

3.0 k

out

0.1

0.25 mF

10 ms

INPUT PULSE

5.1 k

100

t , t ≤ 10 ns

1N4148

DUTY CYCLE = 1.0%

0.01

0.1

Values Shown are for I @ 10 mA

100

, COLLECTOR EMITTER VOLTAGE (V)

Figure 15. Switching Time Test Circuit

Figure 16. Safe Operating Area

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE D

DATE 10 AUG 2009

SCALE 4:1

NOTES:

−X−

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

−Y−

H_E

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

2X b

DIM MIN

NOM

0.50

0.21

0.31

0.12

1.20

0.80

MAX

0.55

0.27

0.37

0.17

1.25

0.85

2X e

0.08 X Y

0.45

0.15

0.25

0.07

1.15

0.75

SIDE VIEW

TOP VIEW

0.40 BSC

1.20

0.29 REF

0.20

H E

1.15

0.15

1.25

0.25

GENERIC

MARKING DIAGRAM*

BOTTOM VIEW

STYLE 1:

PIN 1. BASE

STYLE 2:

PIN 1. ANODE

2. N/C

STYLE 3:

STYLE 4:

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

PIN 1. ANODE

2. ANODE

PIN 1. CATHODE

2. CATHODE

3. ANODE

XX M

2. EMITTER

3. COLLECTOR

3. CATHODE

= Specific Device Code

= Date Code

RECOMMENDED

SOLDERING FOOTPRINT*

*This information is generic. Please refer

to device data sheet for actual part

marking. Pb−Free indicator, “G”, may

or not be present.

0.40

^2X0.27

PACKAGE

OUTLINE

1.50

0.52

0.36

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON12989D

SOT−723

PAGE 1 OF 1

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TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

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

NSVMMBT5401M3T5G [ONSEMI]

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