NSVMMBTA05LT1G [ONSEMI]
NPN 双极晶体管;
| 型号： | NSVMMBTA05LT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA05L, MMBTA06L,
SMMBTA06L
Driver Transistors
NPN Silicon
http://onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
Compliant
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBTA05LT1
60
80
1
MMBTA06LT1, SMMBTA06LT1
2
Collector−Base Voltage
MMBTA05LT1
Vdc
SOT−23
CASE 318
STYLE 6
60
80
MMBTA06LT1, SMMBTA06LT1
Emitter−Base Voltage
4.0
Vdc
Collector Current − Continuous
Electrostatic Discharge
I
500
mAdc
C
MARKING DIAGRAMS
ESD
HBM Class 3B
MM Class C
CDM Class IV
1H M G
1GM M G
THERMAL CHARACTERISTICS
Characteristic
G
G
Symbol
Max
Unit
Total Device Dissipation FR−5
P
225
mW
D
MMBTA05LT1
MMBTA06LT1,
SMMBTA06L
Board (Note 1) T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
1H, 1GM = Specific Device Code
Thermal Resistance,
Junction−to−Ambient
R
556
M
G
= Date Code*
= Pb−Free Package
q
JA
(Note: Microdot may be in either location)
Total Device Dissipation Alumina
P
D
300
mW
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Substrate, (Note 2) T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance,
R
417
q
JA
Junction−to−Ambient
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 8
MMBTA05LT1/D
MMBTA05L, MMBTA06L, SMMBTA06L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I = 1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
MMBTA05
MMBTA06, SMMBTA06
60
80
−
−
C
B
Emitter−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
4.0
−
Vdc
mAdc
mAdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
−
0.1
CES
CE
B
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
CBO
MMBTA05
MMBTA06, SMMBTA06
−
−
0.1
0.1
CB
E
(V = 80 Vdc, I = 0)
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 mAdc, V = 1.0 Vdc)
100
100
−
−
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 100 mAdc, I = 10 mAdc)
V
−
0.25
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = 100 mAdc, V = 1.0 Vdc)
V
BE(on)
−
1.2
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
f
T
100
−
MHz
(I = 10 mA, V = 2.0 V, f = 100 MHz)
C
CE
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
TURN-ON TIME
TURN-OFF TIME
V
V
+V
CC
CC
-1.0 V
BB
+40 V
+40 V
5.0 ms
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t = 3.0 ns
r
* C t 6.0 pF
S
* C t 6.0 pF
S
5.0 mF
5.0 mF
100
100
5.0 ms
t = 3.0 ns
r
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
MMBTA05L, MMBTA06L, SMMBTA06L
1000
100
10
100
T = 25°C
A
C
V
= 2.0 V
ibo
CE
T = 25°C
A
C
obo
10
1
0.1
1
10
100
1000
1
10
100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (V)
R
Figure 2. Current Gain Bandwidth Product vs.
Collector Current
Figure 3. Capacitance
1000
100
10
1.0 k
700
500
T = 150°C
A
V
= 1.0 V
CE
t
s
T = 25°C
A
300
200
T = −55°C
A
100
70
t
f
50
V
= 40 V
CC
I /I = 10
30
20
t
C
B
= I
r
I
B1 B2
t @ V
d
= 0.5 V
BE(off)
T = 25°C
J
10
0.1
1
10
100
1000
5.0 7.0 10
20 30
50 70 100
200 300
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
Figure 5. DC Current Gain vs. Collector
Current
1
1.2
1.1
I /I = 10
I /I = 10
C
B
C
B
1.0
0.9
0.8
0.7
0.6
0.5
0.4
T = −55°C
A
T = 150°C
A
0.1
T = 25°C
A
T = 25°C
A
T = 150°C
A
T = −55°C
A
0.3
0.2
0.1
0.01
0.1
1
10
100
1000
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
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3
MMBTA05L, MMBTA06L, SMMBTA06L
1.1
1
1.0
V
CE
= 1 V
T = 25°C
A
I
=
C
I
=
C
I
=
T = −55°C
C
A
100 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0
50 mA
250 mA
I
C
=
500 mA
T = 25°C
A
I
C
=
10 mA
T = 150°C
A
0.1
1
10
100
1000
0.01
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. Base Emitter Turn−ON Voltage vs.
Figure 9. Saturation Region
Collector Current
−0.8
−1.2
−1.6
−2.0
10000
1000
100
10
MMBTA06L
10 ms
1 ms
100 ms
1 s
Thermal Limit
R
for V
BE
q
VB
−2.4
−2.8
Single Pulse at T = 25°C
A
1
0.1
1
10
100
0.5 1.0 2.0
5.0
10 20
50
100 200
500
I , COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Base−Emitter Temperature
Figure 11. Safe Operating Area
Coefficient
10000
MMBTA05L
100 ms
10 ms
1 ms
1000
100
1 s
Thermal Limit
10
1
Single Pulse at T = 25°C
A
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Safe Operating Area
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4
MMBTA05L, MMBTA06L, SMMBTA06L
ORDERING INFORMATION
Device
†
Package
Shipping
MMBTA05LT1G
SOT−23
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
(Pb−Free)
MMBTA05LT3G
MMBTA06LT1G
SMMBTA06LT1G
MMBTA06LT3G
SMMBTA06LT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MMBTA05L, MMBTA06L, SMMBTA06L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
H
q
2.10
0°
2.40
−−−
2.64
10°
0.083
0°
0.094
−−−
0.104
10°
A
E
L
STYLE 6:
PIN 1. BASE
A1
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBTA05LT1/D
相关型号：
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