NSVMMBTH81LT1G [ONSEMI]

50 mA, 20 V PNP RF Bipolar Junction Transistor;


型号：	NSVMMBTH81LT1G
厂家：	ONSEMI
描述：	50 mA, 20 V PNP RF Bipolar Junction Transistor
文件：	总6页 (文件大小：210K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

PNP RF Transistor

MMBTH81

COLLECTOR

This device is designed for general RF amplifier and mixer

applications to 250 MHz with collector currents in the 1.0 mA to

30 mA range. Sourced from Process 75.

BASE

EMITTER

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

SOT−23

CASE 318−08

STYLE 6

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Units

Collector−Emitter Voltage

CEO

CBO

EBO

MARKING DIAGRAM

Collector−Base Voltage

Emitter−Base Voltage

3.0

3D M

Collector Current − Continuous

°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

stg

3D = Specific Device Code

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

= Date Code*

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Characteristic

Symbol

Max

Unit

Total Device Dissipation

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

556

°C/W

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. Device mounted on FR−4 PCB 1.6 × 1.6 × 0.06 in.

2. These ratings are based on a maximum junction temperature of 150°C.

3. These are steady state limits. The factory should be consulted on applications

involving pulsed or low duty cycle operations.

4. All voltages (V) and currents (A) are negative polarity for PNP transistors.

Publication Order Number:

June, 2022 − Rev. 1

MMBTH81/D

MMBTH81

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 5)

Collector−Base Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cutoff Current

= 1.0 mA, I = 0

(BR)CEO

(BR)CBO

(BR)EBO

= 10 mA, I = 0

3.0

= 10 V, I = 0

100

CBO

Emitter Cutoff Current

= 2.0 V, I = 0

EBO

ON CHARACTERISTICS

DC Current Gain

= 5.0 mA, V = 10 V

Collector−Emitter Saturation Voltage

Base−Emitter Saturation Voltage

= 5.0 mA, I = 0.5 mA

0.5

0.9

CE(sat)

BE(sat)

= 5.0 mA, V = 10 V

SMALL SIGNAL CHARACTERISTICS

Current Gain − Bandwidth Product

Collector−Base Capacitance

Collector Emitter Capacitance

= 5.0 mA, V = 10 V, f = 100 MHz

600

MHz

= 10 V, I = 0, f = 1.0 MHz

0.85

0.65

= 10 V, I = 0, f = 1.0 MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

SPICE MODEL

PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1

Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026

Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)

ORDERING INFORMATION

†

Device

Specific Marking Code

Package

Shipping

NSVMMBTH81LT1G*

SOT−23

(Pb−Free)

3,000 / Tape & Reel

NSVMMBTH81LT3G*

SOT−23

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

www.onsemi.com

MMBTH81

TYPICAL CHARACTERISTICS

400

350

300

250

200

150

100

0.28

0.23

0.18

0.13

0.08

0.03

HFE (125°C)

HFE (25°C)

(125°C)

(25°C)

CESAT

(−55°C)

HFE (−55°C)

CESAT

0.1

100

0.1

100

I , COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain vs. Collector Current

Figure 2. Collector Saturation Voltage vs.

Collector Current

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.50

0.45

0.40

(25°C)

BEON

(−55°C)

(25°C)

BESAT

(100°C)

BEON

BESAT

(125°C)

BESAT

0.1

100

0.1

100

I , COLLECTOR CURRENT (mA)

Figure 3. Base−Emitter Saturation Voltage vs.

Figure 4. Base−Emitter ON Voltage vs.

Collector Current

2.00

1.80

1.60

1.40

1.20

1.00

0.80

0.60

0.50

0.40

0.30

0.20

0.10

0.00

(6 V)

CES

ibo

(3 V)

obo

CES

100

125

150

T , AMBIENT TEMPERATURE (°C)

REVERSE BIAS VOLTAGE (V)

Figure 5. Collector Reverse Current vs.

Ambient Temperature

Figure 6. Input /Output Capacitance vs.

Reverse Bias Voltage

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318

ISSUE AT

DATE 01 MAR 2023

SCALE 4:1

GENERIC

MARKING DIAGRAM*

XXXMG

XXX = Specific Device Code

= Date Code

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

STYLES ON PAGE 2

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42226B

SOT−23 (TO−236)

PAGE 1 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318

ISSUE AT

DATE 01 MAR 2023

STYLE 1 THRU 5:

CANCELLED

STYLE 6:

STYLE 7:

PIN 1. EMITTER

2. BASE

STYLE 8:

PIN 1. BASE

PIN 1. ANODE

2. EMITTER

3. COLLECTOR

2. NO CONNECTION

3. CATHODE

3. COLLECTOR

STYLE 9:

PIN 1. ANODE

2. ANODE

STYLE 10:

STYLE 11:

PIN 1. ANODE

2. CATHODE

STYLE 12:

STYLE 13:

PIN 1. SOURCE

2. DRAIN

STYLE 14:

PIN 1. CATHODE

2. GATE

PIN 1. DRAIN

2. SOURCE

3. GATE

PIN 1. CATHODE

2. CATHODE

3. ANODE

3. CATHODE

3. CATHODE−ANODE

3. GATE

3. ANODE

STYLE 15:

STYLE 16:

STYLE 17:

PIN 1. NO CONNECTION

2. ANODE

STYLE 18:

STYLE 19:

STYLE 20:

PIN 1. CATHODE

2. ANODE

PIN 1. GATE

2. CATHODE

3. ANODE

PIN 1. ANODE

2. CATHODE

3. CATHODE

PIN 1. NO CONNECTION PIN 1. CATHODE

2. CATHODE

3. ANODE

2. ANODE

3. CATHODE−ANODE

3. CATHODE

3. GATE

STYLE 21:

STYLE 22:

STYLE 23:

PIN 1. ANODE

2. ANODE

STYLE 24:

STYLE 25:

STYLE 26:

PIN 1. GATE

2. SOURCE

3. DRAIN

PIN 1. RETURN

2. OUTPUT

3. INPUT

PIN 1. GATE

2. DRAIN

PIN 1. ANODE

2. CATHODE

3. GATE

PIN 1. CATHODE

2. ANODE

3. SOURCE

3. NO CONNECTION

3. CATHODE

STYLE 27:

STYLE 28:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

PIN 1. ANODE

2. ANODE

3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42226B

SOT−23 (TO−236)

PAGE 2 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



NSVMMBTH81LT1G [ONSEMI]

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