NSVMUN2112T1G [ONSEMI]
PNP 双极数字晶体管 (BRT);
| 型号： | NSVMUN2112T1G |
| 厂家： | 
ONSEMI |
| 描述： | PNP 双极数字晶体管 (BRT) 小信号双极晶体管 数字晶体管 |
| 文件： | 总12页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
Features
PIN 1
BASE
(INPUT)
• Pb−Free Packages are Available
• Simplifies Circuit Design
• Reduces Board Space
R
R
1
2
PIN 2
EMITTER
(GROUND)
• Reduces Component Count
• The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
3
• Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
1
2
SC−70/SOT−323
CASE 419
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
STYLE 3
V
CBO
CEO
V
50
Vdc
MARKING DIAGRAM
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
6x
M
6x
M
= Specific Device Code
(See Order Info Table)
= Date Code
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
T = 25°C
A
ORDERING INFORMATION
Derate above 25°C
°C/W
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Thermal Resistance, Junction-to-Ambient
R
618 (Note 1) °C/W
q
JA
403 (Note 2)
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature Range
R
280 (Note 1) °C/W
332 (Note 2)
q
JL
Preferred devices are recommended choices for future use
and best overall value.
T , T
J
−55 to +150
°C
stg
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
October, 2004 − Rev. 7
MUN5111T1/D
MUN5111T1 Series
ORDERING INFORMATION AND RESISTOR VALUES
†
Device
MUN5111T1
Package
Marking
6A
R1 (K)
10
R2 (K)
10
Shipping
SC−70/SOT−323
3000/Tape & Reel
3000/Tape & Reel
MUN5111T1G
SC−70/SOT−323
(Pb−Free)
6A
10
10
MUN5112T1
SC−70/SOT−323
6B
6B
22
22
22
22
3000/Tape & Reel
3000/Tape & Reel
MUN5112T1G
SC−70/SOT−323
(Pb−Free)
MUN5113T1
MUN5113T3
SC−70/SOT−323
6C
6C
47
47
47
47
3000/Tape & Reel
10,000/Tape & Reel
MUN5113T1G
SC−70/SOT−323
(Pb−Free)
3000/Tape & Reel
MUN5114T1
SC−70/SOT−323
6D
6D
10
10
47
47
3000/Tape & Reel
3000/Tape & Reel
MUN5114T1G
SC−70/SOT−323
(Pb−Free)
MUN5115T1 (Note 3)
MUN5115T1G (Note 3)
SC−70/SOT−323
6E
6E
10
10
∞
∞
3000/Tape & Reel
3000/Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5116T1 (Note 3)
MUN5130T1 (Note 3)
MUN5130T1G (Note 3)
SC−70/SOT−323
SC−70/SOT−323
6F
6G
6G
4.7
1.0
1.0
∞
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
1.0
1.0
SC−70/SOT−323
(Pb−Free)
MUN5131T1 (Note 3)
MUN5131T1G (Note 3)
SC−70/SOT−323
6H
6H
2.2
2.2
2.2
2.2
3000/Tape & Reel
3000/Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5132T1 (Note 3)
MUN5132T1G (Note 3)
SC−70/SOT−323
6J
6J
4.7
4.7
4.7
4.7
3000/Tape & Reel
3000/Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5133T1 (Note 3)
MUN5133T1G (Note 3)
SC−70/SOT−323
6K
6K
4.7
4.7
47
47
3000/Tape & Reel
3000/Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5134T1 (Note 3)
MUN5135T1 (Note 3)
MUN5136T1
SC−70/SOT−323
SC−70/SOT−323
SC−70/SOT−323
SC−70/SOT−323
6L
6M
6N
6P
22
2.2
100
47
47
47
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
100
22
MUN5137T1
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
2
MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector−Emitter Breakdown Voltage (Note 4)
(BR)CEO
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 4)
DC Current Gain
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
250
250
5.0
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
15
27
140
130
140
150
140
80
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
E
(I = 10 mA, I = 5 mA) MUN5130T1/MUN5131T1
C
B
(I = 10 mA, I = 1 mA) MUN5115T1/MUN5116T1/
C
B
MUN5132T1/MUN5133T1/MUN5134T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5113T1
MUN5136T1
MUN5137T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
3
MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
MUN5130T1
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1
CC
B
L
Input Resistor
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
kW
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Ratio
MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136T1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
MUN5137T1
250
200
150
100
R
q
= 833°C/W
JA
50
0
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
4
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
−25°C
ꢀ0.1
100
25°C
75°C
ꢀ0.01
10
ꢀ20
I , COLLECTOR CURRENT (mA)
1
10
100
0
ꢀ40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
2
1
0
ꢀ0.1
ꢀ0.01
V
O
= 5 V
ꢀ0.001
0
10
20
30
40
50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1
1000
10
V
CE
= 10 V
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
75°C
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
ꢀ40
ꢀ50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
T ꢁ=ꢁ−25°C
A
l = 0 V
E
10
1
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V
O
= 5 V
ꢀ9
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
http://onsemi.com
6
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1
1
1000
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢀ0.1
ꢀ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V
= 5 V
ꢀ5
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
http://onsemi.com
7
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
CE
= 10 V
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
A
25°C
l = 0 V
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
0.5
0
V
O
= 5 V
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
+12 V
V
O
= 0.2 V
25°C
T ꢁ=ꢁ−25°C
A
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
http://onsemi.com
8
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1
1
1000
75°C
100
−25°C
75°C
25°C
25°C
0.1
−25°C
10
0.01
1
0
5
10
15
20
25
30
35
0
20
40
60
80
100
120
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
100
10
1
10
9
8
7
6
5
4
3
2
1
75°C
−25°C
25°C
0.1
0.01
0
0
0
1
2
3
4
5
6
7
8
9
10
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
10
−25°C
75°C
1
25°C
0.1
0
5
10 15
20 25 30
35 40 45
50
I , OUTPUT CURRENT (mA)
C
Figure 27. Input Voltage versus Output Current
http://onsemi.com
9
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
E
= 0 V
T = −25°C
A
T = 25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 30. Output Capacitance
Figure 31. Output Current versus Input Voltage
100
T = −25°C
A
25°C
10
V
O
= 0.2 V
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 32. Input Voltage versus Output Current
http://onsemi.com
10
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
25°C
25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 33. Maximum Collector Voltage versus
Collector Current
Figure 34. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
E
= 0 V
T = −25°C
A
T = 25°C
A
25°C
0.1
0.01
V
O
= 5 V
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 35. Output Capacitance
Figure 36. Output Current versus Input Voltage
100
V
O
= 0.2 V
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 37. Input Voltage versus Output Current
http://onsemi.com
11
MUN5111T1 Series
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE L
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
INCHES
DIM MIN MAX
MILLIMETERS
3
MIN
1.80
1.15
0.80
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.00
0.40
1.40
0.10
0.25
A
B
C
D
G
H
J
0.071
0.045
0.032
0.012
0.047
0.000
0.004
0.087
0.053
0.040
0.016
0.055
0.004
0.010
B
S
1
2
D
G
K
L
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
N
S
0.079
0.095
2.00
2.40
J
N
STYLE 3:
PIN 1. BASE
C
2. EMITTER
3. COLLECTOR
0.05 (0.002)
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MUN5111T1/D
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明