NSVMUN2132T1G [ONSEMI]
PNP 双极数字晶体管 (BRT);
| 型号： | NSVMUN2132T1G |
| 厂家： | 
ONSEMI |
| 描述： | PNP 双极数字晶体管 (BRT) 小信号双极晶体管 数字晶体管 |
| 文件： | 总12页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN2132, MMUN2132L,
MUN5132, DTA143EE,
DTA143EM3, NSBA143EF3
Digital Transistors (BRT)
R1 = 4.7 kW, R2 = 4.7 kW
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PIN CONNECTIONS
PNP Transistors with Monolithic Bias
Resistor Network
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
• Simplifies Circuit Design
• Reduces Board Space
SC−59
CASE 318D
STYLE 1
XX MG
• Reduces Component Count
G
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
1
SOT−23
CASE 318
STYLE 6
XXX MG
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
G
Compliant
1
MAXIMUM RATINGS (T = 25°C)
A
SC−70/SOT−323
CASE 419
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
XX MG
G
V
V
CBO
CEO
STYLE 3
1
50
Vdc
SC−75
CASE 463
STYLE 1
I
C
100
30
mAdc
Vdc
XX M
XX M
V
IN(fwd)
1
Input Reverse Voltage
V
10
Vdc
IN(rev)
SOT−723
CASE 631AA
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
SOT−1123
CASE 524AA
STYLE 1
X M
1
XXX
M
G
=
=
=
Specific Device Code
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 1
DTA143E/D
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
Table 1. ORDERING INFORMATION
†
Device
Part Marking
Package
SC−59
Shipping
MUN2132T1G
6J
A6J
6J
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
8,000 / Tape & Reel
8,000 / Tape & Reel
MMUN2132LT1G, NSVMMUN2132LT1G
MUN5132T1G, NSVMUN5132T1G
DTA143EET1G
SOT−23
SC−70/SOT−323
SC−75
6J
DTA143EM3T5G
6J
SOT−723
SOT−1123
NSBA143EF3T5G
A (90°)*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
* (xx°) = Degree rotation in the clockwise direction.
300
250
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
200
(1) (2) (3) (4) (5)
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm , 1 oz. copper trace
(5) SOT−723; Minimum Pad
2
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2132)
Total Device Dissipation
Symbol
Max
Unit
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
230
338
1.8
2.7
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
540
370
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R
264
287
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MUNN2132L)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
246
400
2.0
3.2
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
508
311
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
174
208
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5132)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
202
310
1.6
2.5
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
618
403
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
280
332
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA143EE)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
200
300
1.6
2.4
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
600
400
°C/W
°C
q
JA
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTA143EM3)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
260
600
2.0
4.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
480
205
°C/W
°C
q
JA
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
2
2
3. FR−4 @ 100 mm , 1 oz. copper traces, still air.
4. FR−4 @ 500 mm , 1 oz. copper traces, still air.
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3
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBA143EF3)
Total Device Dissipation
Symbol
Max
Unit
P
D
T = 25°C
(Note 3)
(Note 4)
(Note 3)
(Note 4)
254
297
2.0
2.4
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
R
q
493
421
°C/W
JA
Thermal Resistance, Junction to Lead
(Note 3)
R
193
°C/W
°C
q
JL
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
2
2
3. FR−4 @ 100 mm , 1 oz. copper traces, still air.
4. FR−4 @ 500 mm , 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
1.5
−
CB
E
Collector−Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector−Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector−Emitter Breakdown Voltage (Note 5)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 5)
h
FE
(I = 5.0 mA, V = 10 V)
15
−
27
−
−
0.25
−
C
CE
Collector−Emitter Saturation Voltage (Note 5)
(I = 10 mA, I = 1.0 mA)
V
Vdc
Vdc
Vdc
Vdc
Vdc
kW
CE(sat)
C
B
Input Voltage (off)
(V = 5.0 V, I = 100 mA)
V
i(off)
i(on)
−
1.2
2.8
−
CE
C
Input Voltage (on)
(V = 0.2 V, I = 20 mA)
V
−
−
CE
C
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
−
0.2
CC
B
L
Output Voltage (off)
V
OH
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
4.9
3.3
0.8
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
4.7
1.0
6.1
1.2
1
2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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4
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
TYPICAL CHARACTERISTICS
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3
1
1000
I /I = 10
V
= 10 V
C
B
CE
75°C
75°C
100
0.1
−25°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
10
9
8
7
6
5
4
3
2
1
100
10
1
75°C
f = 10 kHz
= 0 A
T = 25°C
A
l
E
25°C
T = −25°C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
T = −25°C
A
25°C
1
75°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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5
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
TYPICAL CHARACTERISTICS − NSBA143EF3
1
1000
25°C
I /I = 10
C
B
150°C
−55°C
100
10
25°C
150°C
0.1
−55°C
1
V
= 10 V
CE
0.01
0.1
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
7
6
100
10
1
f = 10 kHz
= 0 A
T = 25°C
A
150°C
−55°C
I
E
5
4
3
2
25°C
0.1
1
0
V
= 5 V
6
O
0.01
0
10
20
30
40
50
0
1
2
3
4
5
7
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
25°C
10
−55°C
1
150°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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6
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
H
E
1
2
b
e
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 6:
A1
PIN 1. BASE
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
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8
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
9
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
M
D
H
0.20 (0.008) E
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
1.60
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
10
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
D
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
b1
−Y−
3
E
HE
1
2
MILLIMETERS
2X b
3X
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H E
L
1.15
0.15
1.25
0.25
L2
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
NOTES:
−X−
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
3
E
TOP VIEW
MILLIMETERS
A
DIM MIN
MAX
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
A
b
0.34
0.15
b1 0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
H
E
c
H
E
SIDE VIEW
L
0.185 REF
L2 0.05
0.15
STYLE 1:
b
3X
L2
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.08 X Y
e
3X
L
2X
b1
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X 0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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LITERATURE FULFILLMENT:
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