NSVMUN531335DW1T1G [ONSEMI]

Complementary Bias Resistor Transistors;


型号：	NSVMUN531335DW1T1G
厂家：	ONSEMI
描述：	Complementary Bias Resistor Transistors
文件：	总7页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MUN531335DW1

Complementary Bias

Resistor Transistors

NPN - R1=47 kW, R2=47 kW

PNP - R1=2.2 kW, R2=47 kW

NPN and PNP Transistors with Monolithic

Bias Resistor Network

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PIN CONNECTIONS

(2)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(3)

(1)

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable

(4)

(5)

(6)

MARKING DIAGRAM

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

SOT−363

CASE 419B

AJ MG

Compliant

MAXIMUM RATINGS

(T = 25°C, common for Q (PNP), unless otherwise noted)

Specific Device Code

Date Code*

Pb-Free Package

Rating

Collector−Base Voltage

Symbol

Max

Unit

Vdc

CBO

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

CEO

Vdc

(Note: Microdot may be in either location)

100

mAdc

Vdc

*Date Code orientation may vary depending up-

on manufacturing location.

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

MAXIMUM RATINGS

(T = 25°C, common for Q (NPN), unless otherwise noted)

ORDERING INFORMATION

Device

Package Shipping†

Rating

Symbol

Max

Unit

Vdc

NSVMUN531335DW1T1G SOT−363 3000 / Tape

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

(Pb−Free)

& Reel

Vdc

NSVMUN531335DW1T3G SOT−363

10000 /

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

(Pb−Free) Tape & Reel

IN(fwd)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

November, 2016 − Rev. 2

MUN531335DW1/D

MUN531335DW1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

MUN531335DW1 (SOT−363) ONE JUNCTION HEATED

Total Device Dissipation

T = 25°C

(Note 1)

187

256

1.5

2.0

(Note 2)

Derate above 25°C

(Note 1)

mW/°C

(Note 2)

Thermal Resistance,

Junction to Ambient

(Note 1)

(Note 2)

670

490

°C/W

MUN531335DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)

Total Device Dissipation

T = 25°C

(Note 1)

250

385

2.0

3.0

(Note 2)

Derate above 25°C

(Note 1)

mW/°C

(Note 2)

Thermal Resistance,

Junction to Ambient

(Note 2)

°C/W

°C

493

325

Thermal Resistance,

Junction to Lead (Note 1)

(Note 2)

188

208

Junction and Storage Temperature Range

T , T

−55 to +150

stg

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 × 1.0 Inch Pad.

3. Both junction heated values assume total power is sum of two equally powered channels.

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MUN531335DW1

ELECTRICAL CHARACTERISTICS (T = 25°C, common for Q (PNP))

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

nAdc

mAdc

Vdc

CBO

(V = 50 V, I = 0)

−

100

500

0.2

−

Collector−Emitter Cutoff Current

(V = 50 V, I = 0)

CEO

Emitter−Base Cutoff Current

(V = 6.0 V, I = 0)

EBO

−

Collector−Base Breakdown Voltage

(I = 10 mA, I = 0)

(BR)CBO

(BR)CEO

Collector−Emitter Breakdown Voltage (Note 4)

(I = 2.0 mA, I = 0)

Vdc

−

ON CHARACTERISTICS

DC Current Gain (Note 4)

(I = 5.0 mA, V = 10 V)

−

140

−

0.25

−

Collector−Emitter Saturation Voltage (Note 4)

(I = 10 mA, I = 0.3 mA)

Vdc

CE(sat)

Input Voltage (off)

(V = 5.0 V, I = 100 mA)

i(off)

−

0.6

0.8

−

Input Voltage (on)

(V = 0.2 V, I = 5.0 mA)

i(on)

−

Output Voltage (on)

(V = 5.0 V, V = 2.5 V, R = 1.0 kW)

−

0.2

Output Voltage (off)

(V = 5.0 V, V = 0.5 V, R = 1.0 kW)

4.9

1.5

−

Input Resistor

Resistor Ratio

R /R

2.2

2.9

0.038

0.047

0.056

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

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MUN531335DW1

ELECTRICAL CHARACTERISTICS (T = 25°C, common for Q (NPN))

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current

nAdc

mAdc

Vdc

CBO

(V = 50 V, I = 0)

−

100

500

0.1

−

Collector-Emitter Cutoff Current

(V = 50 V, I = 0)

CEO

Emitter-Base Cutoff Current

(V = 6.0 V, I = 0)

EBO

−

Collector-Base Breakdown Voltage

(I = 10 mA, I = 0)

(BR)CBO

(BR)CEO

Collector-Emitter Breakdown Voltage (Note 5)

(I = 2.0 mA, I = 0)

Vdc

−

ON CHARACTERISTICS

DC Current Gain (Note 5)

(I = 5.0 mA, V = 10 V)

−

140

−

0.25

−

Collector-Emitter Saturation Voltage (Note 5)

(I = 10 mA, I = 0.3 mA)

CE(sat)

Input Voltage (Off)

(V = 5.0 V, I = 100 mA)

Vdc

i(off)

i(on)

−

1.2

1.9

−

Input Voltage (On)

(V = 0.2 V, I = 3.0 mA)

−

Output Voltage (On)

(V = 5.0 V, V = 3.5 V, R = 1.0 kW)

−

0.2

Output Voltage (Off)

(V = 5.0 V, V = 0.5 V, R = 1.0 kW)

4.9

32.9

0.8

−

Input Resistor

Resistor Ratio

R /R

1.0

61.1

1.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

400

350

300

250

200

150

100

1.0 × 1.0 Inch Pad

−50 −25

100

125 150

AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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MUN531335DW1

TYPICAL CHARACTERISTICS − PNP TRANSISTOR

1000

= 10 V

I /I = 10

25°C

100

150°C

25°C

−55°C

150°C

0.1

−55°C

0.01

100

I , COLLECTOR CURRENT (mA)

Figure 2. V_CE(sat)vs. I_C

Figure 3. DC Current Gain

100

f = 10 kHz

= 0 A

T = 25°C

150°C

−55°C

25°C

0.1

0.01

= 5 V

0.001

V , REVERSE BIAS VOLTAGE (V)

V , INPUT VOLTAGE (V)

Figure 4. Output Capacitance

Figure 5. Output Current vs. Input Voltage

100

25°C

−55°C

150°C

= 0.2 V

0.1

I , COLLECTOR CURRENT (mA)

Figure 6. Input Voltage vs. Output Current

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MUN531335DW1

TYPICAL CHARACTERISTICS − NPN TRANSISTOR

1000

I /I = 10

= 10 V

T = 75°C

25°C

T = −25°C

−25°C

100

25°C

75°C

0.1

0.01

100

I , COLLECTOR CURRENT (mA)

Figure 7. V_CE(sat)vs. I_C

Figure 8. DC Current Gain

3.2

100

f = 10 kHz

= 0 A

T = 25°C

2.8

2.4

2.0

1.6

1.2

0.8

T = −25°C

75°C

25°C

0.1

0.01

0.4

= 5 V

0.001

V , REVERSE VOLTAGE (V)

V , INPUT VOLTAGE (V)

Figure 9. Output Capacitance

Figure 10. Output Current vs. Input Voltage

100

= 0.2 V

25°C

75°C

T = −25°C

0.1

I , COLLECTOR CURRENT (mA)

Figure 11. Input Voltage vs. Output Current

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MUN531335DW1

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE Y

aaa H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-

SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.

4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF

THE PLASTIC BODY AND DATUM H.

5. DATUMS A AND B ARE DETERMINED AT DATUM H.

6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE

LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.

7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.

ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN

EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-

TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER

RADIUS OF THE FOOT.

GAGE

PLANE

DETAIL A

aaa

2X 3 TIPS

bbb H

MILLIMETERS

DIM MIN NOM MAX

−−−

INCHES

MIN

−−−

NOM MAX

−−− 0.043

−−− 0.004

6X b

−−−

1.10

A1 0.00

A2 0.70

0.10 0.000

ddd

C A-B D

TOP VIEW

0.90

0.20

0.15

2.00

2.10

1.25

0.65 BSC

0.36

1.00 0.027 0.035 0.039

0.25 0.006 0.008 0.010

0.22 0.003 0.006 0.009

2.20 0.070 0.078 0.086

2.20 0.078 0.082 0.086

1.35 0.045 0.049 0.053

0.026 BSC

0.15

0.08

1.80

2.00

DETAIL A

E1 1.15

0.26

0.46 0.010 0.014 0.018

0.006 BSC

0.15 BSC

0.15

aaa

bbb

ccc

ddd

0.006

0.012

0.004

0.30

0.10

ccc C

SEATING

PLANE

SIDE VIEW

END VIEW

RECOMMENDED

SOLDERING FOOTPRINT*

0.30

0.66

2.50

0.65

PITCH

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

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◊

MUN531335DW1/D

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NSVMUN531335DW1T1G [ONSEMI]

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