NSVMUN5314DW1T3G [ONSEMI]
互补双极数字晶体管 (BRT);
| 型号： | NSVMUN5314DW1T3G |
| 厂家： | 
ONSEMI |
| 描述： | 互补双极数字晶体管 (BRT) 开关 光电二极管 数字晶体管 |
| 文件： | 总34页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1GꢀSeries
Dual Bias Resistor
Transistors
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NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
SOT−363
CASE 419B
STYLE 1
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
(3)
(2)
(1)
R
1
R
2
integrating them into
a
single device. In the
Q
1
MUN5311DW1T1G series, two complementary BRT devices are
housed in the SOT−363 package which is ideal for low power surface
mount applications where board space is at a premium.
Q
2
R
2
R
1
(4)
(5)
(6)
Features
• Simplifies Circuit Design
• Reduces Board Space
MARKING DIAGRAM
6
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
xx M G
G
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
(Note: Microdot may be in either location)
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for
A
*Date Code orientation and/or position may
vary depending upon manufacturing location.
Q and Q , − minus sign for Q (PNP) omitted)
1
2
1
Rating
Symbol
Value
50
Unit
Vdc
ORDERING AND DEVICE MARKING
INFORMATION
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
CBO
CEO
V
50
Vdc
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
I
C
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
March, 2014 − Rev. 14
MUN5311DW1T1/D
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
T = 25°C
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
A
Derate above 25°C
mW/°C
Thermal Resistance − Junction-to-Ambient
R
670 (Note 1)
490 (Note 2)
°C/W
q
JA
Characteristic (Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
T = 25°C
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
A
Derate above 25°C
mW/°C
Thermal Resistance − Junction-to-Ambient
Thermal Resistance − Junction-to-Lead
Junction and Storage Temperature
R
493 (Note 1)
325 (Note 2)
°C/W
°C/W
°C
q
JA
R
188 (Note 1)
208 (Note 2)
q
JL
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
†
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5311DW1T1G,
SMUN5311DW1T1G,
SMUN5311DW1T2G
SOT−363
(Pb−Free)
11
10
10
3,000 / Tape & Reel
MUN5312DW1T1G,
SMUN5312DW1T1G
SOT−363
(Pb−Free)
12
13
14
15
16
30
31
32
33
34
22
47
22
47
47
∞
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
MUN5313DW1T1G,
SMUN5313DW1T1G
SOT−363
(Pb−Free)
MUN5314DW1T1G,
SMUN5314DW1T1G
SOT−363
(Pb−Free)
10
MUN5315DW1T1G,
SMUN5315DW1T1G
SOT−363
(Pb−Free)
10
MUN5316DW1T1G
SOT−363
(Pb−Free)
4.7
1.0
2.2
4.7
4.7
22
∞
MUN5330DW1T1G,
SMUN5330DW1T1G
SOT−363
(Pb−Free)
1.0
2.2
4.7
47
47
MUN5331DW1T1G
SOT−363
(Pb−Free)
MUN5332DW1T1G,
NSVMUN5332DW1T1G
SOT−363
(Pb−Free)
MUN5333DW1T1G,
NSVMUN5333DW1T1G
SOT−363
(Pb−Free)
MUN5334DW1T1G,
NSVMUN5334DW1T1G
SOT−363
(Pb−Free)
MUN5335DW1T1G,
SMUN5335DW1T1G,
SMUN5335DW1T2G
SOT−363
(Pb−Free)
35
2.2
47
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted, common for Q and Q , − minus sign for Q (PNP) omitted)
A
1
2
1
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V = 50 V, I = 0)
I
I
nAdc
nAdc
mAdc
CBO
−
−
−
−
100
500
CB
E
Collector-Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
EB
C
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
MUN5330DW1T1G, SMUN5330DW1T1G
G
MUN5331DW1T1
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
Collector-Base Breakdown Voltage
V
V
Vdc
Vdc
(BR)CBO
(I = 10 mA, I = 0)
50
50
−
−
−
−
C
E
Collector-Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
(BR)CEO
C
B
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
(V = 10 V, I = 5.0 mA)
CE
C
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
35
60
60
−
−
−
−
−
−
−
−
−
−
−
−
100
140
140
350
350
5.0
15
80
80
160
160
3.0
8.0
15
30
80
200
150
140
80
80
Collector-Emitter Saturation Voltage
V
Vdc
CE(sat)
(I = 10 mA, I = 0.3 mA)
C
B
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
(I = 10 mA, I = 5 mA)
C
B
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
−
−
−
−
0.25
0.25
(I = 10 mA, I = 1 mA)
C
B
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
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3
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
Characteristic
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
Symbol
Min
Typ
Max
Unit
V
OL
Vdc
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
CC
B
L
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
−
−
0.2
MUN5313DW1T1G, SMUN5313DW1T1G
Output Voltage (off)
V
OH
Vdc
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
CC
B
L
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
CC
B
L
4.9
−
−
MUN5330DW1T1G, SMUN5330DW1T1G
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
CC
B
L
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
Input Resistor
R1
k W
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
7.0
15.4
32.9
7.0
10
22
13
28.6
61.1
13
47
10
10
7.0
13
3.3
4.7
1.0
2.2
4.7
4.7
22
6.1
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
0.7
1.3
1.5
2.9
3.3
6.1
3.3
6.1
15.4
1.54
28.6
2.86
2.2
Resistor Ratio
R1/R2
MUN5311DW1T1G/SMUN5311DW1T1G/MUN5312DW1T1G/
SMUN5312DW1T1G/MUN5313DW1T1G/SMUN5313DW1T1G
MUN5314DW1T1G/SMUN5314DW1T1G
0.8
1.0
1.2
0.17
−
0.8
0.21
−
1.0
0.25
−
1.2
MUN5315DW1T1G/SMUN5315DW1T1G/MUN5316DW1T1G
MUN5330DW1T1G/SMUN5330DW1T1G/MUN5331DW1T1G/
MUN5332DW1T1G/NSVMUN5332DW1T1G
MUN5333DW1T1G/NSVMUN5333DW1T1G
MUN5334DW1T1G/NSVMUN5334DW1T1G
MUN5335DW1T1G/SMUN5335DW1T1G
0.055
0.38
0.038
0.1
0.47
0.047
0.185
0.56
0.056
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
ALL MUN5311DW1T1G SERIES DEVICES
300
250
200
150
100
R
= 490°C/W
50
0
q
JA
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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5
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G, SMUN5311DW1T1G
NPN TRANSISTOR
1
1000
I /I = 10
C B
V
CE
= 10 V
T ꢀ=ꢀ-25°C
A
25°C
T ꢀ=ꢀ75°C
A
25°C
-25°C
0.1
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢀ=ꢀ-25°C
A
T = 25°C
A
1
0.1
2
1
0.01
0.001
V = 5 V
O
0
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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6
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G, SMUN5311DW1T1G
PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢀ=ꢀ75°C
A
T ꢀ=ꢀ-25°C
A
25°C
ꢁ0.1
100
-25°C
25°C
75°C
ꢁ0.01
10
ꢁ20
I , COLLECTOR CURRENT (mA)
1
10
100
0
ꢁ40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T ꢀ=ꢀ-25°C
A
T = 25°C
A
2
1
ꢁ0.1
ꢁ0.01
V = 5 V
O
0
0
ꢁ0.001
10
20
30
40
50
0
1
ꢁ2
3
ꢁ4
ꢁ5
ꢁ6
ꢁ7
ꢁ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
10
25°C
75°C
1
ꢁ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G
NPN TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
25°C
T ꢀ=ꢀ-25°C
A
0.1
-25°C
75°C
100
0.01
10
0.001
1
10
I , COLLECTOR CURRENT (mA)
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
3
2
1
100
10
1
75°C
25°C
f = 1 MHz
T ꢀ=ꢀ-25°C
A
I = 0 V
E
T = 25°C
A
0.1
0.01
V = 5 V
O
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output
Current
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MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G
PNP TRANSISTOR
1000
10
V
CE
= 10 V
I /I = 10
C B
T ꢀ=ꢀ75°C
A
1
25°C
75°C
25°C
T ꢀ=ꢀ-25°C
A
-25°C
100
ꢁ0.1
10
0.01
1
10
0
ꢁ20
I , COLLECTOR CURRENT (mA)
ꢁ40
ꢁ50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
T ꢀ=ꢀ-25°C
A
l = 0 V
E
10
1
T = 25°C
A
ꢁ0.1
1
0
ꢁ0.01
V = 5 V
O
ꢁ0.001
0
1
ꢁ2
ꢁ3
ꢁ4
ꢁ5
ꢁ6
ꢁ7
ꢁ8
ꢁ9
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
10
25°C
75°C
1
ꢁ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G, SMUN5313DW1T1G
NPN TRANSISTOR
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
-25°C
25°C
75°C
100
T ꢀ=ꢀ-25°C
A
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
75°C
I = 0 V
E
T ꢀ=ꢀ-25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
V = 5 V
O
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
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10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G, SMUN5313DW1T1G
PNP TRANSISTOR
1
1000
I /I = 10
C B
T ꢀ=ꢀ75°C
A
T ꢀ=ꢀ-25°C
A
25°C
25°C
75°C
-25°C
100
ꢁ0.1
ꢁ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
100
25°C
T ꢀ=ꢀ75°C
A
f = 1 MHz
l = 0 V
E
0.8
-25°C
10
1
T = 25°C
A
0.6
0.4
ꢁ0.1
ꢁ0.01
0.2
0
V = 5 V
O
ꢁ0.001
0
10
20
30
40
50
0
1
2
3
ꢁ4
ꢁ5
ꢁ6
ꢁ7
ꢁ8
ꢀ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
10
1
ꢀ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I , COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
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11
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G, SMUN5314DW1T1G
NPN TRANSISTOR
1
300
T ꢀ=ꢀ75°C
A
V
CE
= 10
I /I = 10
C B
T ꢀ=ꢀ-25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
-25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
T ꢀ=ꢀ75°C
25°C
A
l = 0 V
E
T = 25°C
A
-25°C
2.5
2
1.5
1
V = 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
V = 0.2 V
O
T ꢀ=ꢀ-25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
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12
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G, SMUN5314DW1T1G
PNP TRANSISTOR
1
180
T ꢀ=ꢀ75°C
A
I /I = 10
C B
V
CE
= 10 V
160
140
120
100
80
T ꢀ=ꢀ-25°C
A
25°C
-25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
4.5
4
100
10
1
T ꢀ=ꢀ75°C
f = 1 MHz
A
25°C
l = 0 V
E
3.5
3
T = 25°C
A
-25°C
2.5
2
1.5
1
V = 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
V = 0.2 V
O
25°C
T ꢀ=ꢀ-25°C
A
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 41. Input Voltage versus Output Current
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13
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G, SMUN5315DW1T1G
NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
75°C
C
B
T = −25°C
A
75°C
100
0.1
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
10
8
I
E
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
= 5 V
9
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 46. Input Voltage versus Output Current
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14
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G, SMUN5315DW1T1G
PNP TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
25°C
T = −25°C
A
75°C
100
0.1
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
100
10
1
4.5
4
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
O
= 5 V
0.5
0.001
0
0
0
1
2
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40 45 50
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 51. Input Voltage versus Output Current
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15
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
T = −25°C
A
75°C
100
0.1
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
10
8
I
E
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 56. Input Voltage versus Output Current
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16
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR
1
1000
V
CE
= 10 V
75°C
25°C
I /I = 10
C
B
T = −25°C
A
75°C
100
0.1
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 57. VCE(sat) versus IC
Figure 58. DC Current Gain
100
10
1
4.5
4
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
25°C
3.5
3
T = −25°C
A
2.5
2
0.1
1.5
1
0.01
V
= 5 V
9
O
0.5
0.001
0
0
0
1
2
3
4
5
6
7
8
10
5
10 15 20 25 30 35 40 45 50
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 61. Input Voltage versus Output Current
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17
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G, SMUN5330DW1T1G
NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
100
0.1
−25°C
25°C
75°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
10
100
10
1
75°C
25°C
T = −25°C
A
1
75°C
T = −25°C
A
25°C
0.1
0.01
V
O
= 0.2 V
20
V
= 5 V
O
0.1
0.001
0
5
10
15
25
0
1
2
3
4
5
6
7
8
9
10
I , COLLECTOR CURRENT (mA)
C
V , INPUT VOLTAGE (VOLTS)
in
Figure 65. Input Voltage versus Output Current
Figure 64. Output Current versus Input Voltage
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18
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G, SMUN5330DW1T1G
PNP TRANSISTOR
100
1
I /I = 10
C
B
75°C
0.1
75°C
−25°C
10
25°C
25°C
0.01
T = −25°C
A
V
CE
= 10 V
0.001
1
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5
4
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
O
= 5 V
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 68. Output Capacitance
Figure 69. Output Current versus Input Voltage
10
T = −25°C
A
75°C
1
25°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 70. Input Voltage versus Output Current
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19
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
100
0.1
−25°C
75°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 71. VCE(sat) versus IC
Figure 72. DC Current Gain
12
10
8
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
I
E
75°C
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 73. Output Capacitance
Figure 74. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
O
= 0.2 V
20
0.1
0
5
10
15
25
I , COLLECTOR CURRENT (mA)
C
Figure 75. Input Voltage versus Output Current
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20
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G PNP TRANSISTOR
100
1
I /I = 10
C
B
75°C
0.1
25°C
75°C
−25°C
10
25°C
0.01
T = −25°C
A
V
CE
= 10 V
0.001
1
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 76. VCE(sat) versus IC
Figure 77. DC Current Gain
4.5
4
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
= 5 V
9
O
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 78. Output Capacitance
Figure 79. Output Current versus Input Voltage
10
T = −25°C
A
75°C
1
25°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 80. Input Voltage versus Output Current
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21
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G, NSVMUN5332DW1T1G NPN
TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
75°C
100
0.1
−25°C
25°C
25°C
0.01
10
1
T = −25°C
A
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
10
8
I
E
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 83. Output Capacitance
Figure 84. Output Current versus Input Voltage
10
T = −25°C
A
25°C
1
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 85. Input Voltage versus Output Current
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22
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G, NSVMUN5332DW1T1G PNP
TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C
B
75°C
25°C
75°C
100
0.1
−25°C
25°C
T = −25°C
A
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 86. VCE(sat) versus IC
Figure 87. DC Current Gain
6
5
4
3
2
1
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
75°C
I
E
25°C
T = −25°C
A
0.1
0.01
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 88. Output Capacitance
Figure 89. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 90. Input Voltage versus Output Current
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23
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G, NSVMUN5333DW1T1G
NPN TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C
B
75°C
T = −25°C
A
100
0.1
75°C
25°C
−25°C
25°C
0.01
10
1
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 91. VCE(sat) versus IC
Figure 92. DC Current Gain
4
3.5
3
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
O
= 5 V
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 93. Output Capacitance
Figure 94. Output Current versus Input Voltage
10
T = −25°C
A
1
75°C
25°C
V
O
= 0.2 V
20
0.1
0
5
10
15
25
I , COLLECTOR CURRENT (mA)
C
Figure 95. Input Voltage versus Output Current
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24
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G, NSVMUN5333DW1T1G
PNP TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 96. VCE(sat) versus IC
Figure 97. DC Current Gain
8
7
6
5
4
3
2
1
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
25°C
0.1
T = −25°C
A
0.01
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 98. Output Capacitance
Figure 99. Output Current versus Input Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 100. Input Voltage versus Output
Current
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25
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G, NSVMUN5334DW1T1G
NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
75°C
−25°C
100
0.1
T = −25°C
A
25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 101. VCE(sat) versus IC
Figure 102. DC Current Gain
3.5
3
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
75°C
I
E
2.5
2
25°C
1.5
1
0.1
T = −25°C
A
0.01
0.5
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 103. Output Capacitance
Figure 104. Output Current versus Input
Voltage
100
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 105. Input Voltage versus Output
Current
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26
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G, NSVMUN5334DW1T1G
PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C
B
75°C
100
0.1
T = −25°C
A
75°C
25°C
−25°C
25°C
0.01
10
1
0.001
0
5
10
15
20
25
30
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 106. VCE(sat) versus IC
Figure 107. DC Current Gain
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27
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G, SMUN5335DW1T1G
NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I = 10
C
B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 108. VCE(sat) versus IC
Figure 109. DC Current Gain
12
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
10
8
I
E
25°C
6
T = −25°C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 110. Output Capacitance
Figure 111. Output Current versus Input
Voltage
10
T = −25°C
A
1
25°C
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 112. Input Voltage versus Output
Current
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28
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G, SMUN5335DW1T1G
PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C
B
75°C
75°C
100
0.1
T = −25°C
A
25°C
−25°C
25°C
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 113. VCE(sat) versus IC
Figure 114. DC Current Gain
4.5
4
100
10
1
25°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
75°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
O
= 5 V
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 115. Output Capacitance
Figure 116. Output Current versus Input
Voltage
10
75°C
1
T = −25°C
A
25°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 117. Input Voltage versus Output
Current
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29
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 118. VCE(sat) versus IC
Figure 119. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
= 0 V
T = 25°C
A
I
E
T = −25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 120. Output Capacitance
Figure 121. Output Current versus Input
Voltage
100
T = −25°C
A
25°C
10
V
O
= 0.2 V
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 122. Input Voltage versus Output
Current
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30
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR
1000
1
V
CE
= 10 V
−25°C
I /I = 10
C
B
75°C
75°C
25°C
100
0.1
T = −25°C
A
25°C
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 123. VCE(sat) versus IC
Figure 124. DC Current Gain
5
4.5
4
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
75°C
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
0.01
1
V
O
= 5 V
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 125. Output Capacitance
Figure 126. Output Current versus Input
Voltage
100
T = −25°C
A
10
1
25°C
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 127. Input Voltage versus Output
Current
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31
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR
1
1000
75°C
T = −25°C
A
75°C
T = −25°C
A
0.1
100
10
25°C
25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 128. VCE(sat) versus IC
Figure 129. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
= 0 V
T = 25°C
A
1.2
1.0
0.8
0.6
0.4
I
E
T = −25°C
A
25°C
0.1
0.01
V
O
= 5 V
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 130. Output Capacitance
Figure 131. Output Current versus Input
Voltage
100
V
O
= 0.2 V
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 132. Input Voltage versus Output
Current
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32
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I = 10
C
B
−25°C
75°C
T = −25°C
75°C
25°C
100
0.1
A
25°C
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 133. VCE(sat) versus IC
Figure 134. DC Current Gain
5
4.5
4
100
10
1
f = 1 MHz
= 0 V
T = 25°C
A
75°C
I
E
3.5
3
25°C
T = −25°C
2.5
2
A
0.1
1.5
0.01
1
V
O
= 5 V
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 135. Output Capacitance
Figure 136. Output Current versus Input
Voltage
100
T = −25°C
A
10
1
25°C
75°C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 137. Input Voltage versus Output
Current
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33
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
MIN
A
0.95
0.05
A1 0.00
6
1
5
2
4
3
A3
0.20 REF
0.21
0.14
2.00
1.25
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
H
−E−
E
0.65 BSC
L
0.10
2.00
0.20
2.10
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
H
E
b 6 PL
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
M
M
E
0.2 (0.008)
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
A3
6. COLLECTOR 2
C
A
SOLDERING FOOTPRINT*
0.50
0.0197
A1
L
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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