NSVRB751V40T1G [ONSEMI]
30 V 肖特基二极管;
| 型号： | NSVRB751V40T1G |
| 厂家： | 
ONSEMI |
| 描述： | 30 V 肖特基二极管 光电二极管 肖特基二极管 |
| 文件： | 总4页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
http://onsemi.com
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage -- 0.28 Volts (Typ) @ IF = 1 mAdc
Low Reverse Current
40 V SCHOTTKY
BARRIER DIODE
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
CATHODE
ANODE
2
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Reverse Voltage
Symbol
Value
40
Unit
V
1
V
RM
SOD--323
CASE 477
STYLE 1
V
30
Vdc
mA
mA
R
Forward Continuous Current (DC)
Peak Forward Surge Current
Electrostatic Discharge
I
30
F
I
500
FSM
MARKING DIAGRAM
E
HBM Class: 1C
MM Class: A
SD
5E MG
G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR--5 Board,
P
200
mW
D
5E = Specific Device Code
(Note 1) T = 25C
A
M
= Date Code
Derate above 25C
1.57
635
mW/C
C/W
G
= Pb--Free Package
(Note: Microdot may be in either location)
Thermal Resistance
Junction--to--Ambient
R
θ
JA
Junction and Storage
Temperature Range
T , T
-- 5 5 t o
+150
C
J
stg
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
†
Device
Package
Shipping
RB751V40T1G SOD--323
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 -- Rev. 4
RB751V40T1/D
RB751V40T1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
30
--
--
Volts
(BR)R
(I = 10 A)
R
Total Capacitance
(V = 1.0 V, f = 1.0 MHz)
R
C
--
--
--
2.0
300
0.28
2.5
500
0.37
pF
T
Reverse Leakage
(V = 30 V)
R
I
nAdc
Vdc
R
Forward Voltage
V
F
(I = 1.0 mAdc)
F
820
+10 V
2 k
0.1 F
I
F
I
F
100 H
t
r
t
p
t
t
t
rr
0.1 F
10%
90%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
OUTPUT PULSE
(I = I = 10 mA; measured
V
R
F
R
at i
INPUT SIGNAL
= 1 mA)
R(REC)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
RB751V40T1G
1000
100
10
T = 150C
A
125C
10
1.0
85C
1.0
0.1
0.1
25C
150C
0.01
0.001
125C
85C
25C
-- 4 0 C
-- 5 5 C
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
0
5
10
15
20
25
30
35
V , REVERSE VOLTAGE (VOLTS)
R
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Typical Forward Voltage
Figure 3. Reverse Current versus Reverse
Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2.0
4.0
6.0
8.0
10
12
14
16
18
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Typical Capacitance
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3
RB751V40T1G
PACKAGE DIMENSIONS
SOD--323
CASE 477--02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
H
D
E
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
1
E
b
2
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.00 0.031 0.035 0.040
0.10 0.000 0.002 0.004
0.006 REF
MIN
A
0.90
0.05
A1 0.00
A3
0.15 REF
0.32
A3
A
b
C
D
E
L
0.25
0.089
1.60
1.15
0.08
2.30
0.4 0.010 0.012 0.016
0.12 0.177 0.003 0.005 0.007
1.70
1.25
1.80 0.062 0.066 0.070
1.35 0.045 0.049 0.053
0.003
H
2.50
2.70 0.090 0.098 0.105
E
L
STYLE 1:
PIN 1. CATHODE
2. ANODE
A1
C
NOTE 5
NOTE 3
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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RB751V40T1/D
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