NSVT5551DW1T1G [ONSEMI]
NPN Multi-Chip;
| 型号： | NSVT5551DW1T1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Multi-Chip |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Dual-Chip NPN
General-Purpose Amplifier
6
1
SOT−363/SC−88/
SC70−6
CASE 419B
NSVT5551DW1
Features
• This Device is Designed for General−purpose High Voltage
Amplifier
MARKING DIAGRAM
• Simplifies Circuit Design
• Reduces Board Space
P1 M
• Reduces Component Count
1
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
P1
M
= Specific Device Code
= Date Code
PIN ASSIGNMENT
ABSOLUTE MAXIMUM RATINGS (Notes 1, 2)
A
(T = 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
160
Unit
V
V
CEO
V
CBO
V
EBO
180
V
6.0
V
Collector Current − Continuous
I
200
mA
°C
C
Operating and Storage Junction
Temperature Range
T , T
−55 to 150
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low duty−cycle operations.
ORDERING INFORMATION
†
Device
NSVT5551DW1T1G
Shipping
Package
SC88−6L
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS (Note 3)
A
(T = 25°C unless otherwise noted)
Characteristic
Total Device Dissipation
Derate Above 25°C
Symbol
Max
200
1.6
Unit
mW
P
D
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
625
q
JA
3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0
NSVT5551DW1/D
NSVT5551DW1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Symbol
Test Condition
= 1.0 mA, I = 0
Min
160
180
6.0
Max
Unit
V
Collector−Emitter Breakdown Voltage (Note 4)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
BV
BV
BV
I
I
I
CEO
CBO
EBO
C
C
E
B
= 100 mA, I = 0
V
E
= 10 mA, I = 0
V
C
I
V
V
V
V
V
V
= 120 V, I = 0
50
50
50
nA
mA
nA
CBO
CB
CB
EB
CE
CE
CE
E
= 120 V, I = 0, T = 100°C
E
A
Emitter Cut−Off Current
I
= 4.0 V, I = 0
C
EBO
DC Current Gain (Note 4)
h
FE
= 5 V, I = 1.0 mA
80
80
30
C
= 5 V, I = 10 mA
250
C
= 5 V, I = 50 mA
C
Collector−Emitter Saturation Voltage (Note 4)
Base−Emitter Saturation Voltage (Note 4)
V
V
(sat)
(sat)
I
C
I
C
I
C
I
C
= 10 mA, I = 1.0 mA
0.15
0.20
1.0
V
V
CE
B
= 50 mA, I = 5.0 mA
B
= 10 mA, I = 1.0 mA
BE
B
= 50 mA, I = 5.0 mA
1.0
B
Current Gain Bandwidth Product
Output Capacitance
f
V
= 10 V, I = 10 mA,
100
300
MHz
pF
T
CE
C
f = 100 MHz
C
V
CB
= 10 V, I = 0, f = 1.0 MHz
6.0
obo
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%.
www.onsemi.com
2
NSVT5551DW1
TYPICAL CHARACTERISTICS
1000
100
T = 125°C
A
10
1
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = −55°C
A
T = 25°C
A
T = −40°C
A
T = 25°C
A
10
1
0.1
T = −55°C
A
T = −40°C
A
0.01
0.0001
0.001
0.01
0.1
1
0.001
0.01
I , COLLECTOR CURRENT (A)
0.1
I , COLLECTOR CURRENT (A)
C
C
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
10
0.5
0.4
0.3
0.2
T = −55°C
T = 150°C
T = −40°C
A
A
A
T = −55°C
A
T = 125°C
A
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = −40°C
A
1
T = 25°C
A
0.1
0
0.1
0.001
0.01
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I , COLLECTOR CURRENT (A)
C
V
BE
, BASE−EMITTER VOLTAGE (V)
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Base−Emitter ON Voltage
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3
NSVT5551DW1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXMG
6X
0.66
G
1
2.50
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
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4
NSVT5551DW1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1. ANODE 2
2. N/C
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1. ANODE
2. ANODE
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
3. COLLECTOR
3. CATHODE 1
4. ANODE 1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR 2
6. ANODE
6. CATHODE
6. CATHODE 2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
4. SOURCE 1
5. DRAIN 1
6. GATE 2
4. DRAIN 1
5. DRAIN 2
6. GATE 2
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
5. BASE 2
6. COLLECTOR 2
STYLE 13:
PIN 1. ANODE
2. N/C
STYLE 14:
PIN 1. VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1. VIN1
2. VCC
PIN 1. ANODE 1
2. ANODE 2
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE 3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
5. EMITTER 1
6. COLLECTOR 1
5. EMITTER 2
6. COLLECTOR 1
6. CATHODE
STYLE 19:
PIN 1. I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1. ANODE 1
2. N/C
STYLE 22:
PIN 1. D1 (i)
2. GND
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
STYLE 24:
PIN 1. CATHODE
2. ANODE
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE 2
4. CATHODE 2
5. N/C
3. D2 (i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2 (c)
5. VBUS
6. D1 (c)
4. N/C
5. V EN
5. CH2
6. N/C
6. V REF
6. CATHODE 1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1. ANODE
2. ANODE
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
3. DRAIN 2
4. SOURCE 2
5. GATE 2
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR 1
6. DRAIN 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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