NTB4302G [ONSEMI]
Power MOSFET 74 Amps, 30 Volts N-Channel D2PAK;
| 型号： | NTB4302G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 74 Amps, 30 Volts N-Channel D2PAK 开关 脉冲 晶体管 功率场效应晶体管 |
| 文件： | 总8页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP4302, NTB4302
Power MOSFET
74 Amps, 30 Volts
N−Channel TO−220 and D2PAK
Features
• Low R
DS(on)
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• Higher Efficiency Extending Battery Life
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
74 AMPERES
30 VOLTS
RDS(on) = 9.3 mΩ Max
• I
Specified at Elevated Temperature
DSS
Typical Applications
• DC−DC Converters
N−Channel
• Low Voltage Motor Control
D
• Power Management in Portable and Battery Powered Products: Ie:
Computers, Printers, Cellular and Cordless Telephones, and PCMCIA
Cards
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
4
S
Rating
Symbol Value
Unit
4
Drain−to−Source Voltage
V
30
30
Vdc
Vdc
Vdc
DSS
1
2
Drain−to−Gate Voltage (R = 10 MΩ)
V
DGR
GS
3
Gate−to−Source Voltage
− Continuous
2
V
"20
D PAK
GS
TO−220AB
CASE 221A
STYLE 5
CASE 418AA
STYLE 2
Drain Current
− Continuous @ T = 25°C
I
I
74
47
175
Adc
Apk
C
D
D
1
2
− Continuous @ T = 100°C
C
3
− Single Pulse (t v10 µs)
I
p
DM
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Total Power Dissipation @ T = 25°C
P
D
80
W
C
Derate above 25°C
0.66
W/°C
4
4
Operating and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Drain
Drain
Single Pulse Drain−to−Source Avalanche
E
AS
722
mJ
Energy − Starting T = 25°C
J
NTx4302
LLYWW
(V = 30 Vdc, V = 10 Vdc, L = 5.0 mH
DD
GS
NTx4302
LLYWW
I
= 17 A, V = 30 Vdc, R = 25 Ω)
DS G
L(pk)
Thermal Resistance
− Junction−to−Case
°C/W
°C
1
Gate
3
1
Gate
3
2
R
R
1.55
70
θ
JC
JA
Source
Source
Drain
− Junction−to−Ambient (Note 1)
θ
2
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
x
= P or B
Drain
NTx4302
LL
Y
= Device Code
= Location Code
= Year
1. When surface mounted to an FR4 Board using minimum recommended Pad
2
Size, (Cu Area 0.412 in ).
2. Current limited by internal lead wires.
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP4302
NTB4302
NTB4302T4
TO−220AB
50 Units/Rail
50 Units/Rail
2
D PAK
2
D PAK
800/Tape & Reel
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
October, 2003 − Rev. 1
NTP4302/D
NTP4302, NTB4302
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V = 0 Vdc, I = 250 µAdc)
V
Vdc
(BR)DSS
30
−
−
25
−
−
GS
D
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 30 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 30 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc)
I
−
−
±100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V = V , I = 250 µAdc)
V
GS(th)
1.0
−
1.9
−3.8
3.0
−
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mΩ
Static Drain−to−Source On−Resistance (Note 3)
R
DS(on)
(V = 10 Vdc, I = 37 Adc)
−
−
6.8
6.8
9.5
9.3
9.3
12.5
GS
D
(V = 10 Vdc, I = 20 Adc)
GS
D
(V = 4.5 Vdc, I = 10 Adc)
GS
D
Forward Transconductance (Note 3) (V = 10 Vdc, I = 20 Adc)
g
FS
40
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
2050
640
2400
800
iss
(V = 24 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
225
310
rss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
10
22
45
35
18
70
32
30
28
7.5
19
18
35
75
70
−
ns
ns
d(on)
Rise Time
t
r
(V = 24 Vdc, I = 20 Adc,
DD
D
V
= 10 Vdc, R = 2.5 Ω) (Note 3)
G
GS
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn−On Delay Time
Rise Time
d(on)
t
r
−
(V = 24 Vdc, I = 10 Adc,
DD
D
V
GS
= 4.5 Vdc, R = 2.5 Ω) (Note 3)
G
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
−
Gate Charge
Q
−
nC
T
(V = 24 Vdc, I = 37 Adc,
DS
D
Q
Q
−
gs
gd
V
GS
= 4.5 Vdc) (Note 3)
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 20 Adc, V = 0 Vdc) (Note 3)
V
−
−
0.90
0.75
1.3
−
Vdc
ns
S
GS
SD
(I = 20 Adc, V = 0 Vdc, T = 125°C)
S
GS
J
Reverse Recovery Time
t
−
−
−
−
37
21
−
−
−
−
rr
(I = 20 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/µs) (Note 3)
S
t
16
b
Reverse Recovery Stored Charge
Q
0.035
µC
RR
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTP4302, NTB4302
60
V
GS
= 10 V
70
60
50
40
30
20
10
7 V
5 V
V
≥ 10 V
DS
4.4 V
4 V
T = 25_C
J
4.6 V
50
40
30
20
10
0
3.8 V
T = 25°C
J
3 V
2.8 V
3.4 V
3.2 V
T = 100°C
J
T = −55°C
J
0
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.06
0.015
0.01
I
= 20 A
D
T = 25°C
J
T = 25°C
J
V
V
= 4.5 V
= 10 V
GS
0.04
0.02
0
0.005
GS
0
0
2
4
6
8
10
0
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
1000
1.6
1.4
I
V
= 20 A
V
GS
= 0 V
D
= 10 V
GS
T = 150°C
J
1.2
1
100
10
T = 100°C
J
0.8
0.6
1
−50 −25
0
25
50
75
100
125 150
0
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTP4302, NTB4302
6000
5000
4000
3000
2000
1000
5
30
24
V
= 0 V
V
= 0 V
T = 25°C
J
DS
GS
Q
T
V
DS
4
3
2
V
GS
C
iss
Q
Q
2
1
18
12
6
C
rss
C
C
iss
1
0
oss
I
D
= 37 A
T = 25°C
J
C
rss
0
10
V
GS
0 V
10
20
30
0
10
20
30
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
100
25
20
V
= 0 V
V
I
= 24 V
= 20 A
= 10 V
GS
DD
T = 25°C
J
D
V
GS
t
d(off)
t
f
15
10
t
r
10
1
t
d(on)
5
0
0.5
1
10
100
0.6
0.7
0.8
0.9
1
R , GATE RESISTANCE (Ω)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variations
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
1000
100
10
800
700
600
500
400
300
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10 s max.
I
= 17 A
D
V
= 20 V
GS
SINGLE PULSE
= 25°C
T
C
10 µs
100 µs
1 ms
10 ms
200
100
0
dc
10
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP4302, NTB4302
SAFE OPERATING AREA
1.00
D = 0.5
0.2
0.1
P
(pk)
0.05
0.10
R
(t) = r(t) R
θ
JC
θ
JC
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
SINGLE PULSE
t
1
READ TIME AT t
1
t
2
T
− T = P
C
R (t)
θ
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
0.01
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
t, TIME (s)
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
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5
NTP4302, NTB4302
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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6
NTP4302, NTB4302
PACKAGE DIMENSIONS
D2PAK
CASE 418AA−01
ISSUE O
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
V
−B−
W
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
J
K
M
S
V
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.036
0.045 0.055
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.92
1.40
−−−
A
S
1
2
3
0.310
0.100 BSC
0.018 0.025
−−−
2.54 BSC
0.46
2.29
7.11
0.64
2.79
−−−
−T−
SEATING
PLANE
K
0.090
0.280
0.110
−−−
W
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
J
G
STYLE 2:
PIN 1. GATE
D 3 PL
M
M
0.13 (0.005)
T B
2. DRAIN
3. SOURCE
4. DRAIN
VARIABLE
CONFIGURATION
ZONE
U
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
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7
NTP4302, NTB4302
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTP4302/D
相关型号：
NTB4302T4G
74A, 30V, 0.0093ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3
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