NTBG1000N170M1 [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L;
| 型号： | NTBG1000N170M1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L |
| 文件： | 总8页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
MOSFET – EliteSiC,
960 mohm, 1700ꢀV,
M1, D2PAK-7L
V
R
TYP
I MAX
D
(BR)DSS
DS(ON)
1700 V
960 mW @ 20 V
4.3 A
Drain
(TAB)
NTBG1000N170M1
Features
Gate
(Pin 1)
Typ. R
Ultra Low Gate Charge (typ. Q
Low Effective Output Capacitance (typ. C = 11 pF)
= 960 mW
DS(on)
Driver
Source
(Pin 2)
= 14 nC)
G(tot)
Power Source
(Pin 3, 4, 5, 6, 7)
oss
N−CHANNEL MOSFET
100% Avalanche Tested
RoHS Compliant
Typical Applications
Solar Inverters
Electric Vehicle Charging Stations
Electric Storing Systems
SMPS (Switch Mode Power Supplies)
UPS (Uninterruptible Power Supplies)
D2PAK−7L
CASE 418BJ
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
1700
Unit
V
V
DSS
AYWWZZ
BG1000
N170M1
Gate−to−Source Voltage
V
GS
−15/+25
−5/+20
V
Recommended Operation Val-
T
< 175C
= 25C
V
V
C
GSop
ues of Gate−to−Source Voltage
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Lot Traceability
Continuous Drain
Current (Note 2)
I
D
4.3
51
A
W
A
Steady
State
T
C
Power Dissipation
(Note 2)
P
I
D
BG1000N170M1 = Specific Device Code
Continuous Drain
Current (Note 2)
3.0
25
Steady
State
T
C
= 100C
D
Power Dissipation
(Note 2)
P
D
W
A
ORDERING INFORMATION
†
Device
Package
Shipping
Pulsed Drain Current
(Note 3)
T
C
= 25C
I
14.6
DM
NTBG1000N170M1
D2PAK−7L
800 ea/
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
C
Tape&Reel
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Source Current (Body Diode) (Note 2)
I
10
24
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 6.9 A, L = 1 mH) (Note 4)
L(pk)
Maximum Temperature for Soldering (10 s)
T
L
270
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. E of 24 mJ is based on starting T = 25C; L = 1 mH, I = 6.9 A,
AS
DD
J
AS
V
= 120 V, V = 18 V.
GS
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2023 − Rev. 2
NTBG1000N170M1/D
NTBG1000N170M1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
Symbol
Typ
2.9
−
Max
−
Unit
C/W
R
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1700
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25C
D
−
0.5
V/C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25C
−
−
−
−
−
−
100
1
mA
mA
mA
DSS
GS
DS
J
= 1700 V
T = 175C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
GS
= +25/−15 V, V = 0 V
1
GSS
DS
V
R
V
GS
= V , I = 640 mA
1.8
−5
−
3.2
−
4.3
+20
1430
−
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 2 A, T = 25C
960
mW
DS(on)
D
J
= 20 V, I = 2 A, T = 175C
−
1824
0.6
D
J
Forward Transconductance
g
FS
= 10 V, I = 2 A (Note 6)
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0 V, f = 1 MHz,
= 1000 V
−
−
−
−
−
−
−
−
150
11
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
(Note 6)
Reverse Transfer Capacitance
Total Gate Charge
0.6
14
Q
V
D
= −5/20 V, V = 800 V,
nC
G(TOT)
GS
DS
I
= 2 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
1.5
2.6
7.5
5.7
G(TH)
(Note 6)
Q
GS
GD
Q
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
V
D
R
= −5/20 V,
−
−
−
−
−
−
−
6
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
= 800 V,
Rise Time
t
r
18
11
55
59
11
70
I
= 2 A,
= 25 W,
Turn−Off Delay Time
t
d(OFF)
G
L = 300 mH
Inductive load
(Notes 5, 6)
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
mJ
E
OFF
E
tot
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
= −5 V, T = 25C
−
−
−
−
10
50
A
SD
GS
J
Current (Note 2)
(Note 6)
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
SDM
Forward Diode Voltage
Reverse Recovery Time
V
V
V
= −5 V, I = 2 A, T = 25C
−
−
4.2
5.9
−
−
V
SD
GS
SD
J
t
= −5/20 V, I = 2 A,
ns
RR
GS
S
SD
dI /dt = 1000 A/ms
Reverse Recovery Charge
Q
−
11
−
nC
RR
(Note 6)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. E /E
result is with body diode.
ON OFF
6. Defined by design, not subject to production test.
www.onsemi.com
2
NTBG1000N170M1
TYPICAL CHARACTERISTICS
8
8
18 V
T
C
= −55C
16 V
16 V
18 V
7
6
5
4
7
6
5
4
14 V
V
GS
= 20 V
V
GS
= 20 V
14 V
10 V
10 V
3
2
1
0
3
2
1
0
T
C
= 25C
0
2
4
6
8
10 12
14 16 18 20
0
2
4
6
8
10 12
14 16 18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
2.5
2.0
1.5
8
14 V
18 V
16 V
T
C
= 175C
V
GS
= 20 V
7
6
5
4
18 V
16 V
V
GS
= 20 V
14 V
10 V
3
2
1
0
10 V
1.0
0.5
0
2
4
6
8
10 12
14 16 18 20
0
2
4
6
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Region Characteristics
Figure 4. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
5
4
I
V
= 2 A
I = 2 A
D
D
= 20 V
GS
3
2
T = 150C
J
1
0
T = 25C
J
−75 −50 −25
0
25 50 75 100 125 150 175
8
9
10 11 12 13 14 15 16 17 18 19 20
V , GATE−TO−SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (C)
J
Figure 5. Normalized On−Resistance Variation
Figure 6. On−Resistance vs. Gate−to−Source
with Temperature
Voltage
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3
NTBG1000N170M1
TYPICAL CHARACTERISTICS
120
8
6
4
V
V
= 800 V
= −5 V/20 V
= 25C
DD
V
= 10 V
DS
E
TOT
GS
T
C
90
60
30
0
R = 25 W
G
E
ON
T = 175C
J
2
0
T = 25C
J
E
OFF
T = −55C
J
2
4
6
8
10
12
14
16
18
20
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 7. Transfer Characteristics
Figure 8. Switching Loss vs. Drain Current
120
50
10
V
= 800 V
= 2 A
= −5 V/20 V
= 25C
DD
V
GS
= −5 V
I
D
V
GS
T = 175C
J
E
TOT
90
60
30
0
T
C
E
ON
T = 25C
J
1
E
OFF
T = −55C
J
0.1
0
1
2
3
4
5
6
7
8
9
10
25
30
35
40
45
50
55
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
R
, EXTERNAL GATE RESISTANCE (W)
G(EXT)
Figure 10. Diode Forward Voltage vs. Current
Figure 9. Switching Loss vs. Gate Resistance
1000
100
20
V
= 400 V
DD
I
D
= 2 A
15
10
5
C
iss
V
DD
= 600 V
V
DD
= 800 V
C
oss
10
1
0
f = 1 MHz
= 0 V
C
rss
V
GS
−5
0
3
6
9
12
15
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
100
Q , GATE CHARGE (nC)
V
g
Figure 11. Gate−to−Source Voltage vs. Total
Figure 12. Capacitance vs. Drain−to−Source
Charge
Voltage
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4
NTBG1000N170M1
TYPICAL CHARACTERISTICS
5
4
3
10
V
GS
= 20 V
T = 25C
J
2
1
0
R
= 2.9C/W
q
JC
1
0.001
0.01
, TIME IN AVALANCHE (ms)
0.1
25
50
75
100
125
150
175
t
AV
T , CASE TEMPERATURE (C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
30
10
100K
10K
Single Pulse
R
= 2.9C/W
q
JC
10 ms
This Area is
Limited by R
T
C
= 25C
DS(on)
100 ms
1
1K
100
10
T
= 25C
C
Single Pulse
T = Max Rated
1 ms
J
0.1
R
= 2.9C/W
q
JC
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms
1000
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 15. Maximum Rated Forward Biased
Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
10
50% Duty Cycle
1
20%
10%
5%
2%
0.1
1%
Notes:
P
DM
R
= 2.9C/W
q
JC
Single Pulse
0.000001
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
0.01
J
DM
t
1
2
1
t
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 17. Transient Thermal Impedance
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5
NTBG1000N170M1
ESD RATINGS
ESD Test
Classification
0B (125 V to <250 V)
C3 (>1000 V)
Standard
ESD−HBM
ANSI/ESDA/JEDEC JS−001
ANSI/ESDA/JEDEC JS−002
ESD−CDM
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D2PAK7 (TO−263−7L HV)
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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