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NTBL048N60S5H [ONSEMI]

MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 50 A, 48 mΩ, TOLL;
NTBL048N60S5H
型号： NTBL048N60S5H
厂家： ONSEMI    ONSEMI
描述：

MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 50 A, 48 mΩ, TOLL
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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, SUPERFET),  
FAST, TOLL-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
600 V  
48 mW @ 10 V  
50 A  
D
600 V, 48 mW, 50 A  
NTBL048N60S5H  
Description  
G
The SUPERFET V MOSFET FAST series helps maximize system  
efficiency by the extremely low switching losses in hard switching  
application. The TOLL package offers improved thermal performance  
and excellent switching performance by providing a Kelvin Source  
configuration and lower parasitic source inductance.  
Features  
S1: Driver Source  
S2: Power Source  
S1  
S2  
POWER MOSFET  
D
• 650 V @ T = 150°C / Typ. R  
= 38.4 mW  
J
DS(on)  
• 100% Avalanche Tested  
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant  
G
S1  
Applications  
• Telecom / Server Power Supplies  
• EV Charger / UPS / Solar / Industrial Power Supplies  
S2  
H−PSOF8L  
CASE 100DC  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
600  
30  
Unit  
V
V
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage  
DC  
V
GS  
V
AC (f > 1 Hz)  
30  
Continuous Drain Current  
T
= 25°C  
= 100°C  
= 25°C  
= 25°C  
= 25°C  
I
50  
A
AYWWZZ  
C
D
T
C
31  
Power Dissipation  
T
C
T
C
T
C
P
297  
175  
175  
W
A
D
NTBL048  
N60S5H  
Pulsed Drain Current (Note 1)  
I
DM  
Pulsed Source Current (Body  
Diode) (Note 1)  
I
A
SM  
Operating Junction and Storage Temperature T , T  
−55 to  
+150  
°C  
J
STG  
A
Y
= Assembly Location  
= Year  
Range  
WW  
ZZ  
= Work Week  
= Assembly Lot Code  
Source Current (Body Diode)  
I
50  
A
S
Single Pulse Avalanche  
Energy  
I = 7.6 A  
G
E
AS  
478  
mJ  
L
NTBL048N60S5H = Specific Device Code  
R
= 25 W  
Avalanche Current  
I
7.6  
2.98  
120  
20  
A
AS  
ORDERING INFORMATION  
Repetitive Avalanche Energy (Note 1)  
MOSFET dv/dt  
E
mJ  
AR  
†
dv/dt  
V/ns  
Device  
Package  
Shipping  
Peak Diode Recovery dv/dt (Note 2)  
NTBL048N60S5H  
H−PSOF8L  
2000 / Tape &  
Reel  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 seconds)  
T
L
260  
°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: pulse−width limited by maximum junction temperature.  
2. I ≤ 25 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.  
SD  
DD  
J
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
July, 2022 − Rev. 1  
NTBL048N60S5H/D  
 
NTBL048N60S5H  
THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
0.42  
43  
Unit  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
°C/W  
q
JC  
R
q
JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
V
V
I
= 0 V, I = 1 mA, T = 25_C  
600  
−
−
−
V
(BR)DSS  
GS  
D
J
Drain−to−Source Breakdown Voltage  
Temperature Coefficient  
DV  
/
= 10 mA, Referenced to 25_C  
−
630  
mV/_C  
(BR)DSS  
D
DT  
J
Zero Gate Voltage Drain Current  
Gate−to−Source Leakage Current  
ON CHARACTERISTICS  
I
V
GS  
= 0 V, V = 600 V, T = 25_C  
−
−
−
−
2
mA  
DSS  
GSS  
DS  
J
I
V
=
30 V, V = 0 V  
100  
nA  
GS  
DS  
Drain−to−Source On Resistance  
Gate Threshold Voltage  
R
V
= 10 V, I = 25 A, T = 25_C  
−
2.7  
−
38.4  
−
48  
4.3  
−
mW  
V
DS(on)  
GS  
D
J
V
V
GS  
= V , I = 5.6 mA, T = 25_C  
GS(th)  
DS  
D
J
Forward Trans−conductance  
g
FS  
V
DS  
= 20 V, I = 25 A  
52.3  
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE  
Input Capacitance  
C
V
= 400 V, V = 0 V, f = 250 kHz  
−
−
−
5277  
74.3  
1173  
−
−
−
pF  
ISS  
DS  
GS  
Output Capacitance  
C
OSS  
Time Related Output Capacitance  
C
I = Constant, V = 0 V to 400 V,  
D DS  
OSS(tr)  
V
GS  
= 0 V  
Energy Related Output Capacitance  
Total Gate Charge  
C
V
= 0 V to 400 V, V = 0 V  
−
−
−
−
−
124  
93  
−
−
−
−
−
OSS(er)  
DS  
GS  
Q
V
= 400 V, I = 25 A, V = 10 V  
nC  
G(tot)  
DD  
D
GS  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Gate Resistance  
Q
25.3  
23.8  
0.66  
GS  
Q
GD  
R
f = 1 MHz  
W
G
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
Rise Time  
t
V
GS  
I
= 0/10 V, V = 400 V,  
−
−
−
−
27.4  
7.69  
76.7  
2.59  
−
−
−
−
ns  
d(on)  
DD  
= 25 A, R = 2.2 W  
D
G
t
r
Turn-Off Delay Time  
Fall Time  
t
d(off)  
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS  
Forward Diode Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
V
GS  
= 0 V, I = 25 A, T = 25_C  
−
−
−
−
1.2  
−
V
SD  
RR  
SD  
J
t
V
= 0 V, I = 25 A,  
425  
8259  
ns  
nC  
GS  
SD  
dI/dt = 100 A/ms, V = 400 V  
DD  
Q
−
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
SenseFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
www.onsemi.com  
2
NTBL048N60S5H  
TYPICAL CHARACTERISTICS  
100  
80  
60  
40  
20  
0
1000  
T
VDS=20V  
J=25°C  
100  
10  
VGS=4V  
V
GS=4.5V  
VGS=5V  
GS=6V  
VGS=7V  
V
T
J=−55°C  
T
J=25°C  
VGS=10V  
T
J=150°C  
1
0
5
10  
15  
20  
2
3
4
5
6
VDS, Drain to Source Voltage (V)  
VGS, Gate to Source Voltage (V)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
100  
80  
60  
40  
20  
0
1000  
100  
10  
T
VGS=0V  
J=25°C  
1
=150°C  
TJ  
V
GS=10V  
=25°C  
TJ  
VGS=20V  
=−55°C  
TJ  
0.1  
0
20  
40  
60  
80  
100  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
ID, Drain Current (A)  
VSD, Diode Forward Voltage (V)  
Figure 3. On−Resistance Variation vs. Drain  
Figure 4. Diode Forward Voltage vs. Source  
Current  
Current and Gate Voltage  
105  
10  
8
C
iss=Cgs+Cgd(Cds=shorted)  
VGS=0V  
ID=25A  
T
J=25°C  
Coss=Cds+Cgd  
Crss=Cgd  
104  
103  
102  
101  
100  
10−1  
f=250KHz  
6
4
2
C
ISS  
OSS  
RSS  
C
V
DD=130V  
C
VDD=400V  
0
0
100  
200  
300  
400  
500  
600  
0
10  
20  
30  
40  
50  
60  
70 80  
90 100  
VDS, Drain to Source Voltage (V)  
QG, Gate Charge (nC)  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
www.onsemi.com  
3
NTBL048N60S5H  
TYPICAL CHARACTERISTICS  
1.2  
1.15  
1.1  
3
VGS=0V  
ID=10mA  
ID=25A  
VGS=10V  
2.5  
2
1.5  
1
1.05  
1
0.95  
0.9  
0.5  
0.85  
0.8  
0
−75 −50 −25  
0
25 50 75 100 125 150 175  
−75 −50 −25  
0
25 50 75 100 125 150 175  
T
T
J, Junction Temperature (°C)  
J, Junction Temperature (°C)  
Figure 8. On−Resistance Variation vs.  
Figure 7. Breakdown Voltage Variation vs.  
Temperature  
Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
C=25°C  
102  
101  
T
J=150°C  
Single Pulse  
Limited by RDS(ON)  
100  
pulseDuration=10u  
pulseDuration=100u  
pulseDuration=1m  
pulseDuration=10m  
pulseDuration=DC  
10−1  
0
0.1  
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
VDS, Drain to Source Voltage (V)  
T
C, Case Temperature (°C)  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current vs. Case  
Temperature  
18  
16  
14  
12  
10  
8
6
4
2
EOSS  
0
0
100  
200  
300  
400  
500  
600  
VDS, Drain to Source Voltage (V)  
Figure 11. Eoss vs. Drain−to−Source Voltage  
www.onsemi.com  
4
NTBL048N60S5H  
TYPICAL CHARACTERISTICS  
1
D=0 is Single Pulse  
0.1  
0.01  
D=0.00  
D=0.01  
D=0.02  
D=0.05  
D=0.10  
D=0.20  
D=0.50  
Notes:  
ZθJC (t)=0.42°C/W Max  
PPDM  
TJM =PDM xZθJC (t)+TC  
Duty Cycle,D=t1/t2  
t1  
t2  
0.001  
10−5  
10−4  
10−3  
10−2  
10−1  
100  
t,Rectangular Pulse Duration(s)  
Figure 12. Transient Thermal Impedance  
www.onsemi.com  
5
NTBL048N60S5H  
PACKAGE DIMENSIONS  
H−PSOF8L 9.90x11.68, 1.20P  
CASE 100DC  
ISSUE O  
www.onsemi.com  
6
NTBL048N60S5H  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
Email Requests to: orderlit@onsemi.com  
TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 800−282−9855 Toll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
Phone: 00421 33 790 2910  
For additional information, please contact your local Sales Representative  
onsemi Website: www.onsemi.com  
◊
www.onsemi.com  

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