NTBL050N65S3H [ONSEMI]
MOSFET - Power, N‐Channel, SUPERFET® III, FAST, 650 V, 49 A, 50 mΩ, TOLL;
| 型号： | NTBL050N65S3H |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, N‐Channel, SUPERFET® III, FAST, 650 V, 49 A, 50 mΩ, TOLL |
| 文件： | 总10页 (文件大小：504K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power,
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
N‐Channel, SUPERFET) III,
FAST
650 V, 49 A, 50 mW
650 V
50 mW @ 10 V
49 A
NTBL050N65S3H
Description
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
N−Channel MOSFET
D
Consequently, SUPERFAST III FAST MOSFET series helps
minimize various power systems and improve system efficiency. The
TOLL package offers improved thermal performance and excellent
switching performance thanks to Kelvin Source configuration and
lower parasitic source inductance. TOLL offers Moisture Sensitivity
Level 1 (MSL 1).
G
S1
S2
H−PSOF8L
CASE 100DC
Features
• 700 V @ T = 150°C
J
• Typ. R
= 40 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 98 nC)
g
MARKING DIAGRAM
• Low Effective Output Capacitance (Typ.
= 909 pF)
Coss(eff.)
• 100% Avalanche Tested
AYWWZZ
• Kelvin Source Configuration and Low Parasitic Source Inductance
• MSL1 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
NTBL050
N65S3H
Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
A
Y
WW
ZZ
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
NTBL050N65S3H = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
April, 2023 − Rev. 2
NTBL050N65S3H/D
NTBL050N65S3H
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
49
A
C
Continuous (T = 100°C)
31
C
I
Drain Current
Pulsed (Note 1)
132
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
491
AS
AS
I
6.8
E
3.05
120
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
305
W
W/°C
°C
D
C
Derate Above 25°C
2.44
−55 to +150
260
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 6.8 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I £ 24.5 A, di/dt ≤ 100 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.41
43
Unit
R
R
Thermal Resistance, Junction to Case, Steady State
q
JC
JA
_C/W
Thermal Resistance, Junction to Ambient, Steady State (Note 4)
q
2
4. Device on 1 in , 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
NTBL050N65S3H
NTBL050N65S3H
H−PSOF8L
13” mm
24 mm
2000 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NTBL050N65S3H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25_C
0.63
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
3.21
−
1.0
−
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 4.8 mA
2.4
−
−
4.0
50
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 24.5 A
42.5
52
D
g
FS
= 20 V, I = 24.5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
4880
70
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
909
128
98
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 24.5 A, V = 10 V
D GS
g(tot)
(Note 5)
Q
24
gs
Q
25
gd
ESR
f = 1 MHz
0.6
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 24.5 A,
−
−
−
−
32
9.5
96
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 5)
t
d(off)
t
f
2.6
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
49
132
1.2
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 24.5 A
SD
t
Reverse Recovery Time
V
= 0 V, I = 24.5 A,
−
−
442
8.8
−
−
ns
rr
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
NTBL050N65S3H
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
C
1000
100
80
10 V
6.0 V
250 ms Pulse Test
5.5 V
V
DS
= 20 V
7.0 V
250 ms Pulse Test
= 25°C
100
T
C
60
5.0 V
40
10
1
4.5 V
T = 25°C
J
20
0
V
= 4.0 V
GS
T = −55°C
T = 150°C
J
J
0
5
10
15
20
2
0
0
3
4
5
6
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
= 25°C
Figure 2. Transfer Characteristics
1000
100
0.10
0.08
0.06
0.04
V
= 0 V
T
GS
C
250 ms Pulse Test
V
= 10 V
GS
10
1
V
= 20 V
GS
0.02
0
T = 150°C
J
T = 25°C
T = −55°C
J
J
0.1
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
D
Figure 3. On−Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Drain Current and Gate Voltage
6
10
10
8
V
= 0 V
C
C
C
= C + C (C = shorted)
gs gd ds
V
= 130 V
GS
iss
DD
I
D
= 24.5 A
f = 250 KHz
5
= C + C
oss
rss
ds
gd
10
= C
gd
C
4
iss
10
V
DD
= 400 V
3
6
10
C
oss
2
10
4
C
rss
1
10
2
0
0
10
−1
10
0
100
200
300
400
500
600
25
50
75
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTBL050N65S3H
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
C
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 24.5 A
GS
GS
D
2.5
2.0
1.5
1.0
D
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
1000
100
10
50
40
30
20
10 ms
100 ms
Operation in this
Area is Limited
1 ms
by R
DS(on)
1
10 ms
100
10
0
T
= 25°C
C
DC
T = 150°C
J
Single Pulse
0.1
1
10
1000
25
50
75
100
125
150
V
DS
, DRAIN−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
15
10
5
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTBL050N65S3H
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
C
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
Z
q
(t) = r(t) x R
q
JC
JC
0.01
R
= 0.41°C/W
q
JC
Peak T = P
Duty Cycle, D = t /t
x Z (t) + T
q
JC C
t
J
DM
1
Single Pulse
0.00001
t
1
2
2
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Impedance
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6
NTBL050N65S3H
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTBL050N65S3H
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 9.90x11.68, 1.20P
CASE 100DC
ISSUE A
DATE 18 MAY 2023
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80466G
H−PSOF8L 9.90x11.68, 1.20P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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