NTBL150N60S5H [ONSEMI]
MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 19 A, 150 mΩ, TOLL;
| 型号： | NTBL150N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 19 A, 150 mΩ, TOLL |
| 文件： | 总7页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
FAST, TOLL-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
150 mW @ 10 V
19 A
D
600 V, 150 mW, 19 A
NTBL150N60S5H
G
Description
S1: Driver Source
S2: Power Source
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
application. The TOLL package offers improved thermal performance
and excellent switching performance by providing a Kelvin Source
configuration and lower parasitic source inductance.
S1 S2
N−Channel MOSFET
Features
• 650 V @ T = 150°C, Typ. R
= 120 mW
J
DS(on)
• 100% Avalanche Tested
• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
H−PSOF8L 9.90x11.68, 1.20P
CASE 100DC
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
AYWWZZ
Gate−to−Source Voltage
DC
V
GS
V
AC (f > 1 Hz)
30
NTBL150
N60S5H
Continuous Drain Current
T
C
= 25°C
= 100°C
= 25°C
= 25°C
I
19
A
D
T
C
12
Power Dissipation
T
T
P
133
67
W
A
C
D
A
Y
= Assembly Location
= Year
Pulsed Drain Current (Note 1)
I
DM
C
WW
ZZ
= Work Week
= Assembly Lot Code
Pulsed Source Current
(Body Diode) (Note 1)
I
67
A
SM
NTBL150N60S5H = Specific Device Code
Operating Junction and Storage Temperature T , T
Range
−55 to
+150
°C
J
STG
ORDERING INFORMATION
Source Current (Body Diode)
I
S
19
A
†
Single Pulse Avalanche
Energy
I = 4.1 A
G
E
153
mJ
Device
Package
Shipping
L
AS
R
= 25 W
NTBL150N60S5H H−PSOF8L
2000 / Tape &
Reel
Avalanche Current
I
AS
4.1
1.33
120
20
A
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
AR
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 9.5 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
October, 2022 − Rev. 0
NTBL150N60S5H/D
NTBL150N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.94
43
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 10 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
1
mA
DSS
GSS
DS
J
I
V
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 9.5 A, T = 25_C
−
2.7
−
120
−
150
4.3
−
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 1.8mA, T = 25_C
GS(th)
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 9.5 A
18.3
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
1713
26.8
415
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I = Constant, V = 0 V to 400 V,
D DS
OSS(tr)
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
44.8
29.8
8.38
8.34
1.05
−
−
−
−
−
OSS(er)
DS
GS
Q
V
= 400 V, I = 9.5 A, V = 9.5 V
nC
G(TOT)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
Q
GS
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
GS
I
= 0/10 V, V = 400 V,
−
−
−
−
17.4
5.14
54.9
2.83
−
−
−
−
ns
d(ON)
DD
= 9.5 A, R = 10 W
D
G
t
r
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 9.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 9.5 A,
319
3999
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
www.onsemi.com
2
NTBL150N60S5H
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
1000
T
VDS=20V
J=25°C
100
10
VGS=4V
V
GS=4.5V
VGS=5V
VGS=6V
T
J=−55°C
V
GS
GS=7V
T
J=25°C
V
=10V
T
J=150°C
0
1
0
5
10
15
20
3
4
5
6
7
VDS , Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
300
250
200
150
100
50
1000
100
10
T
VGS=0V
J=25°C
1
T
J=150°C
VGS=10V
VGS=20V
T
J=25°C
T
J=−55°C
0
0.1
0
5
10
15
20
25
30
35
40
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD , Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
105
104
103
102
101
100
10−1
10
ID=9.5A
VGS=0V
C
iss=Cgs+Cgd(Cds=shorted)
T
J=25°C
Coss=Cds+Cgd
Crss=Cgd
f=250KHz
8
6
4
2
0
C
ISS
OSS
RSS
C
VDD=130V
VDD=400V
C
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTBL150N60S5H
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS=0V
ID=10mA
ID=9.5A
VGS=10V
2.5
2
1.5
1
1.05
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T
T
J, Junction Temperature (°C)
J, Junction Temperature (°C)
Figure 8. On−Resistance Variation vs.
Figure 7. Breakdown Voltage Variation vs.
Temperature
Temperature
20
18
16
14
12
10
8
TC=25°C
Single Pulse
T
J=150°C
Limited by RDS(ON)
101
100
6
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
4
2
10−1
0
0.1
1
10
100
1000
25
50
75
100
125
150
VDS, Drain to Source Voltage (V)
T
C, Case Temperature (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
7
6
5
4
3
2
1
0
EOSS
0
100
200
300
400
500
600
VDS, Drain to Source Voltage (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
www.onsemi.com
4
NTBL150N60S5H
TYPICAL CHARACTERISTICS
1
D=0 is Single Pulse
0.1
0.01
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
ZθJC(t)=0.94°C/W Max
PPDM
TJM=PP xZ
Duty Cycle,D=t1/t2
DM θJxCZ(t)+TC
t1
t2
0.001
10−6
10−5
10−4
10−3
10−2
10−1
100
t,Rectangular Pulse Duration(s)
Figure 12. Transient Thermal Impedance
www.onsemi.com
5
NTBL150N60S5H
PACKAGE DIMENSIONS
H−PSOF8L 9.90x11.68, 1.20P
CASE 100DC
ISSUE O
www.onsemi.com
6
NTBL150N60S5H
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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