NTBLS0D7N06C [ONSEMI]
MOSFET - Power, Single, N-Channel, TOLL, 60 V, 0.75 mΩ, 470 A;
| 型号： | NTBLS0D7N06C |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single, N-Channel, TOLL, 60 V, 0.75 mΩ, 470 A |
| 文件： | 总7页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, TOLL
60 V, 0.75 mW, 470 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
0.75 mW @ 10 V
1.2 mW @ 6 V
60 V
470 A
NTBLS0D7N06C
D
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
G
• Lowers Switching Noise/EMI
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
H−PSOF8L
CASE 100CU
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
T
T
= 25°C
= 25°C
I
470
A
C
D
Current R
(Note 2)
q
JC
ORDERING INFORMATION
Steady
State
Power Dissipation
(Note 2)
P
314
54
W
A
C
D
†
Device
Package
Shipping
R
q
JC
NTBLS0D7N06C
H−PSOF8L
(Pb−Free)
2000 / Tape &
Reel
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
Steady
State
(Notes 1, 2)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Power Dissipation
T = 25°C
A
P
4.2
W
D
R
(Notes 1, 2)
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
260
800
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 40 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.48
36
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
November, 2021 − Rev. 3
NTBLS0D7N06C/D
NTBLS0D7N06C
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Units
Drain−to−Source Breakdown Voltage
V
I
D
= 250 mA, V = 0 V
60
V
(BR)DSS
GS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 661 mA, ref to 25°C
D
26.5
mV/°C
(BR)DSS
V
= 60 V,
GS
T = 25°C
10
Zero Gate Voltage Drain Current
I
mA
mA
nA
DS
J
DSS
V
= 0 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
GS
GSS
DS
GS
V
GS(th)
V
= V , I = 661 mA
2.0
2.8
9.8
4.0
V
mV/°C
mW
mW
S
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
Gate−Resistance
V
/T
I = 661 mA, ref to 25°C
D
GS(th)
J
R
R
V
GS
= 10 V, I = 80 A
0.56
0.85
310
0.6
0.75
1.20
DS(on)
DS(on)
D
V
= 6 V, I = 66 A
D
GS
DS
g
V
= 10 V, I = 80 A
D
FS
R
T = 25°C
W
G
A
CHARGES & CAPACTIANCES
Input Capacitance
C
V
GS
= 0 V, V = 30 V, f = 10 kHz
13730
6912
92
pF
pF
pF
nC
nC
nC
nC
nC
iss
DS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
GS
= 10 V, V = 30 V,
170
39
G(tot)
DS
I
= 80 A
D
Threshold Gate Charge
Q
G(th)
Gate−to−Source Charge
Gate−to−Drain Charge
Q
62
gs
gd
Q
16
Total Gate Charge
Q
V
GS
= 6 V, V = 30 V,
D
102
G(tot)
DS
I
= 80 A
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
V
= 10 V, V = 30 V,
37
57
ns
ns
ns
ns
d(on)
GS
D
DS
I
= 80 A, R = 6 W
G
t
r
Turn−Off Delay Time
Fall Time
t
146
105
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
I
= 80 A, V = 0 V
T = 25°C
0.79
0.66
132
64
1.2
V
V
SD
S
GS
J
= 80 A, V = 0 V
T = 125°C
J
S
GS
Reverse Recovery Time
Charge Time
t
ns
ns
ns
nC
V
GS
= 0 V, dI /d = 100 A/ms,
S t
rr
I
= 66 A
S
t
a
Discharge Time
t
68
b
Reverse Recovery Charge
Q
386
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
NTBLS0D7N06C
TYPICAL CHARACTERISTICS
1200
1100
1000
900
600
10 V & 8 V
7.0 V
V
DS
= 10 V
6.0 V
500
400
300
200
100
0
800
700
600
500
V
GS
= 5.0 V
4.5 V
T = 25°C
J
400
300
200
100
0
T = 125°C
J
T = −55°C
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.75
2.5
3.0
2.75
2.5
T = 25°C
D
J
I
= 80 A
2.25
2.0
2.25
2.0
1.75
1.5
1.75
1.5
V
GS
= 5 V
V
GS
= 5.5 V
1.25
1.0
1.25
1.0
V
= 6 V
= 7 V
GS
V
GS
0.75
0.5
0.75
0.5
V
GS
= 10 V
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5 10
0
50
100 150
200
250
300
350 400
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1M
100K
10K
1K
V
= 10 V
= 80 A
GS
I
D
T = 175°C
J
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
10
V
= 0 V
GS
−50 −25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTBLS0D7N06C
TYPICAL CHARACTERISTICS
11
10
9
100K
Q
T
10K
1K
8
7
6
5
4
3
2
1
0
C
iss
C
oss
Q
Q
GD
GS
100
C
rss
V
= 0 V
GS
V
DS
= 30 V
T = 25°C
J
I
D
= 80 A
f = 10 kHz
T = 25°C
J
10
0
10
20
30
40
50
60
0
20
40
60
80 100 120 140 160 180
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
1000
100
10
1000
t
d(off)
V
V
I
= 10 V
= 30 V
= 80 A
V
= 0 V
GS
GS
DS
t
f
D
t
r
t
d(on)
100
10
T = 175°C
J
1
T = 150°C
J
T = 25°C T = −55°C
J J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3 0.4 0.5
0.6 0.7 0.8 0.9
1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10 ms
T
= 25°C
J(initial)
T
= 100°C
0.5 ms
1 ms
J(initial)
Single Pulse
T
C
= 25°C
10
1
V
GS
≤ 10 V
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTBLS0D7N06C
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
R
Steady State = 36°C/W
q
JA
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics (Junction−to−Ambient)
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE C
DATE 22 MAY 2023
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H−PSOF8L 11.68x9.80
PAGE 1 OF 1
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