NTBLS1D5N10MCTXG [ONSEMI]
MOSFET - Power, Single, N-Channel, TOLL, 100 V, 1.53 mΩ, 312 A;
| 型号： | NTBLS1D5N10MCTXG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single, N-Channel, TOLL, 100 V, 1.53 mΩ, 312 A |
| 文件： | 总7页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, TOLL
100 V, 1.5 mW, 312 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
1.5 mW @ 10 V
312 A
D
NTBLS1D5N10MC
Features
• Low R
G
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S
• Lowers Switching Noise/EMI
• These Devices are Pb−Free and are RoHS Compliant
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
312
220
322
161
32
A
C
D
q
JC
H−PSOF8L
CASE 100CU
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
MARKING DIAGRAM
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
22
(Notes 1, 2, 3)
Steady
State
AYWWZZ
1D5N10
MC
Power Dissipation
T = 25°C
A
P
3.4
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
1.7
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
2055
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
A = Assembly Location
Y = Year
J
stg
WW = Work Week
ZZ = Lot Traceability
1D5N10MC = Specific Device Code
Source Current (Body Diode)
I
247
530
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 80 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.46
43
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2022 − Rev. 2
NTBLS1D5N10MC/D
NTBLS1D5N10MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
60
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
10
DSS
GS
J
V
= 100 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 799 mA
2.0
4.0
1.5
V
mV/°C
mW
S
GS(TH)
GS
DS
D
V
/T
J
−9.3
1.2
GS(TH)
R
V
GS
= 10 V
I = 80 A
D
DS(on)
g
V
= 10 V, I = 80 A
230
FS
DS
D
C
10100
5100
84
ISS
Output Capacitance
C
C
V
V
= 0 V, f = 1 MHz, V = 50 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
131
25
G(TOT)
Threshold Gate Charge
Q
G(TH)
nC
V
Gate−to−Source Charge
Gate−to−Drain Charge
Q
49
= 10 V, V = 50 V; I = 80 A
GS
GD
GP
GS
DS
D
Q
V
21
Plateau Voltage
5
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
39
71
83
90
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
ns
I
= 80 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.81
0.68
110
143
49
1.3
SD
J
V
S
= 0 V,
GS
V
I
= 80 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
ns
nC
ns
ns
RR
Q
RR
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 71 A
t
a
Discharge Time
t
62
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTBLS1D5N10MC
TYPICAL CHARACTERISTICS
300
250
200
150
100
500
V
GS
= 10 V to 6 V
V
DS
= 10 V
450
400
350
300
250
200
150
5.0 V
4.8 V
T = 25°C
J
4.6 V
4.4 V
100
50
0
50
0
T = 150°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
3
2
3
2
T = 25°C
T = 25°C
D
J
J
I
= 80 A
V
GS
= 10 V
1
0
1
0
4
5
6
7
8
9
10
11
10
60
110
160
210
260
310
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
100
10
1
V
= 10 V
= 80 A
T = 175°C
J
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
0.01
0.001
T = 25°C
J
1.0
0.5
0.0001
−50 −25
0
25
50
75 100 125 150 175
10 20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTBLS1D5N10MC
TYPICAL CHARACTERISTICS
10
9
100K
10K
1K
C
ISS
8
7
6
5
4
3
C
OSS
Q
Q
GD
GS
100
C
RSS
T = 25°C
D
J
V
= 0 V
2
1
0
GS
10
1
I
= 80 A
T = 25°C
J
V
DS
= 50 V
f = 1 MHz
0
20
40
60
80
100
120
140
0
10 20 30 40
50 60 70 80
90 100
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
100
V
V
I
= 10 V
= 50 V
= 80 A
V
GS
= 0 V
GS
t
d(off)
t
f
DS
t
r
D
t
d(on)
10
10
1
T = 125°C T = 25°C
T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25°C
10 ms
J(initial)
100 ms
T
= 100°C
J(initial)
T
= 25°C
C
10
1
Single Pulse
≤ 10 V
V
1 ms
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100 ms
0.1
1
10
100
1E−06 1E−05
1E−04
t , TIME IN AVALANCHE (s)
AV
1E−03
1E−02 1E−01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTBLS1D5N10MC
TYPICAL CHARACTERISTICS
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTBLS1D5N10MCTXG
1D5N10MC
H−PSOF8L
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTBLS1D5N10MC
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE A
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6
NTBLS1D5N10MC
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