NTC020N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, Die;
| 型号： | NTC020N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, Die |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
20ꢀmohm, 1200ꢀV, M1, Die
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
28 mꢀ @ 20 V
103 A
N−CHANNEL MOSFET
D
NTC020N120SC1
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
G
S
DIE DIAGRAM
Features
• 1200 V @ T = 175°C
J
G
• Typ R
= 20 mꢀ at V = 20 V, I = 60 A
GS D
DS(on)
• High Speed Switching with Low Capacitance
• 100% UIL Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Applications
S3
S1
S2
• Industrial Motor Drive
• UPS
• Boost Inverter
• PV Charger
Die Information
S Wafer Diameter
6 inch
S Die Size
4,300 x 6,300 ꢁ m
S Metallization
⋅ Top
Ti/TiN/Al
5 ꢁ m
⋅ Back
Ti/NiV/Ag
S Die Thickness
S Gate Pad Size
Typ. 200 ꢁ m
600 x 310 ꢁ m
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 2
NTC020N120SC1/D
NTC020N120SC1
Die Cross Section
Die Layout
4300
600
Source
2
Source
1
Source
3
Passivation
(Polyimide)
G
N- Epic
S3
S1
S2
4519
6300
N+
Substrate
1102
1158.5
1102
Passivation Information
− Passivation Material: Polymide (PSPI)
− Passivation Type: Local Passivation
− Passivation Thickness 10 ꢁ m
: Passivation Area
Die Layout
Figure 1. Bare Die Dimensions
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2
NTC020N120SC1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
1200
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
V
DSS
V
−15/+25
−5/+20
V
GS
Recommended Operation Values of Gate−
to−Source Voltage
T
C
< 175°C
V
GSop
V
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
103
A
ꢂ
JC
Power Dissipation R
P
535
73
W
A
ꢂ
D
JC
Continuous Drain
Current R
Steady
State
T
C
= 100°C
I
D
ꢂ
JC
Power Dissipation R
P
267
412
W
A
ꢂ
D
JC
Pulsed Drain Current (Note 2)
T
C
= 25°C
I
DM
Single Pulse Surge Drain Current Capability
T
C
= 25°C, t = 10 ꢁ s, R = 4.7
ꢀ
I
807
A
p
G
DSC
Operating Junction and Storage Temperature Range
Source Current (Body Diode)
T , T
−55 to +175
54
°C
A
J
stg
I
S
Single Pulse Drain−to−Source Avalanche
E
AS
264
mJ
Energy (I
= 23 A, L = 1 mH) (Note 3)
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Note 1)
R
0.28
°C/W
ꢂ
JC
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A, V = 120 V, V = 18 V.
AS
J
AS
DD
GS
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3
NTC020N120SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
−
900
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
250
1
ꢁ
A
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25_C
DSS
DS
J
= 0 V, V = 1200 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +25/−15 V, V = 0 V
DS
ꢁ
A
GSS
Gate Threshold Voltage
V
R
V
= V , I = 20 mA
1.8
−5
−
2.7
−
4.3
+20
28
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 60 A, T = 25_C
20
30
28
mꢀ
DS(on)
D
J
= 20 V, I = 60 A, T = 150_C
−
D
J
Forward Transconductance
g
FS
= 10 V, I = 60 A
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
2890
260
22
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
GS
DS
C
OSS
RSS
C
Q
V
= −5/20 V, V = 600 V, I = 80 A
203
33
G(tot)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(th)
Q
66
GS
GD
Q
47
R
f = 1 MHz
1.81
ꢀ
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
25
57
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 80 A, R = 2 ꢀ,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
45
d(off)
t
f
11
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
2718
326
3040
ꢁ
J
ON
OFF
TOT
E
E
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V
= −5 V
−
−
−
−
54
A
A
SD
GS
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
412
SDM
GS
Forward Diode Voltage
V
V
V
= −5 V, I = 30 A
−
−
−
−
−
3.7
31
−
−
−
−
−
V
ns
nC
ꢁ J
A
SD
GS
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
t
= −5/20 V, I = 80 A,
SD
dI /dt = 1000 A/ꢁ s
RR
GS
S
Q
240
10
RR
E
REC
RRM
I
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NTC020N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
250
200
150
100
2.5
V
GS
= 20 V
V
= 16 V
GS
16 V
17 V
2.0
1.5
18 V
19 V
19 V
18 V
17 V
V
= 20 V
GS
1.0
0.5
50
0
0
2
4
6
8
10
0
5
1
50
100
150
200
250
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 2. On−Region Characteristics
Figure 3. Normalized On−Resistance vs. Drain
Current and Gate Voltage
160
120
80
1.9
1.7
1.5
1.3
1.1
I
= 60 A
D
I
V
= 60 A
= 20 V
D
GS
T = 150°C
J
40
0
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance Variation with
Figure 5. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
80
300
V
= −5 V
V
= 20 V
GS
DS
T = 25°C
J
60
30
40
T = 25°C
J
T = 175°C
J
20
0
T = −55°C
J
T = 175°C
J
T = −55°C
J
3
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Transfer Characteristics
Figure 7. Diode Forward Voltage vs. Current
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5
NTC020N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
100K
20
V
DD
= 400 V
I
D
= 80 A
V
= 800 V
DD
10K
1K
15
10
5
C
iss
V
= 600 V
DD
C
oss
100
10
1
C
rss
0
f = 1 MHz
= 0 V
V
GS
−5
0
50
100
150
200
250
0.1
1
10
100
800
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 8. Gate−to−Source Voltage vs. Total
Figure 9. Capacitance vs. Drain−to−Source
Charge
Voltage
120
100
80
1000
100
V
GS
= 20 V
Starting T = 25°C
J
60
Starting T = 150°C
J
40
10
1
20
0
Typical performance based
on characterization data
R
= 0.28°C/W
ꢂ
JC
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
175
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 10. Unclamped Inductive Switching
Capability
Figure 11. Maximum Continuous Drain Current
vs. Case Temperature
100K
1000
100
10
Single Pulse
R
= 0.28°C/W
ꢂ
JC
T
C
= 25°C
10K
1K
10 ꢁ s
100 ꢁ s
This area is
limited by R
DS(on)
1 ms
Single Pulse
T = Max Rated
1
J
10 ms
Curve bent to
measured data
R
T
= 0.28°C/W
= 25°C
ꢂ
JC
100 ms
C
0.1
100
0.1
1
10
100
1K
5K
0.00001 0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 12. Safe Operating Area
Figure 13. Single Pulse Maximum Power
Dissipation
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6
NTC020N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
1%
P
DM
Z
ꢂ
ꢂ
JC
JC
0.01
Single Pulse
R
= 0.28°C/W
ꢂ
JC
t
Peak T = P
x Z
(t) + T
JC C
1
ꢂ
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction−to−Ambient Thermal Response
ORDERING INFORMATION AND PACKAGE MARKING
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NTC020N120SC1
N/A
Die
Wafer
N/A
N/A
N/A
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7
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