NTD4809NHT4G [ONSEMI]
Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK; 功率MOSFET的30 V ， 58 A单N沟道， DPAK / IPAK
| 型号： | NTD4809NHT4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD4809NH
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
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V
R
DS(on)
MAX
I MAX
D
(BR)DSS
Applications
9.0 mW @ 10 V
14 mW @ 4.5 V
30 V
58 A
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
30
Unit
V
N−Channel
G
V
DSS
V
"20
11.5
9.0
V
GS
S
Continuous Drain
I
A
T = 25°C
D
A
Current (R ) (Note 1)
q
JA
T = 85°C
A
4
Power Dissipation
(R ) (Note 1)
T = 25°C
P
2.0
W
A
A
D
4
q
JA
Continuous Drain
I
T = 25°C
A
9.0
7.0
1.3
D
2
Current (R ) (Note 2)
1
q
JA
T = 85°C
A
1
2
3
IPAK
Steady
State
3
Power Dissipation
(R ) (Note 2)
T = 25°C
A
P
I
W
A
D
3 IPAK
CASE 369AD
(Straight Lead)
DPAK
q
JA
CASE 369C
(Bent Lead)
STYLE 2
CASE 369D
(Straight Lead
DPAK)
Continuous Drain
T
T
T
= 25°C
= 85°C
= 25°C
58
45
52
D
C
C
C
Current (R
(Note 1)
)
q
JC
Power Dissipation
(R ) (Note 1)
P
W
D
MARKING DIAGRAMS
& PIN ASSIGNMENTS
q
JC
4
Pulsed Drain Current
t =10ms T = 25°C
I
DM
130
45
A
A
p
A
4
Drain
Drain
4
Current Limited by Package
T = 25°C
A
I
DmaxPkg
Drain
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
Drain to Source dV/dt
I
43
6.0
A
S
dV/dt
V/ns
mJ
2
Single Pulse Drain−to−Source Avalanche
E
112.5
AS
1
2
3
Drain
1
3
Energy (V = 24 V, V = 10 V,
DD
GS
Gate Drain Source
Gate Source
L = 1.0 mH, I
= 15 A, R = 25 W)
1
2
3
L(pk)
G
Gate Drain Source
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Y
= Year
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
WW
= Work Week
4809NH= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
November, 2006 − Rev. 1
NTD4809NH/D
NTD4809NH
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
R
2.9
3.5
74
°C/W
q
JC
Junction−to−TAB (Drain)
R
q
JC−TAB
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
R
q
JA
JA
116
q
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
(BR)DSS
25
mV/°C
J
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
10
mA
DSS
J
V
V
= 0 V,
= 24 V
GS
DS
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.5
2.5
9.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
5.7
7.0
mV/°C
mW
GS(TH)
J
R
DS(on)
V
= 10 to
11.5 V
I
I
I
I
= 30 A
= 15 A
= 30 A
= 15 A
GS
D
D
D
D
7.0
V
= 4.5 V
10.45
9.95
9.0
12.5
GS
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= 15 V, I = 15 A
S
FS
DS
D
C
1596
331
190
12.5
2.4
pF
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
= 12 V
DS
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
15
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= 4.5 V, V = 15 V,
DS
GS
I
= 30 A
D
Q
5.3
GS
GD
Q
5.1
Q
V
= 11.5 V, V = 15 V,
29.3
nC
ns
G(TOT)
GS
DS
I
= 30 A
D
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
t
12.0
20
d(on)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
I
= 15 A, R = 3.0 W
G
D
Turn−Off Delay Time
Fall Time
t
14
d(off)
t
5.0
7.0
18
f
Turn−On Delay Time
Rise Time
t
t
ns
d(on)
t
r
V
= 11.5 V, V = 15 V,
DS
= 15 A, R = 3.0 W
G
GS
I
D
Turn−Off Delay Time
Fall Time
22
d(off)
t
3.0
f
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4809NH
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
J
0.95
0.83
15.6
10.6
5.0
1.2
SD
V
= 0 V,
GS
I
= 30 A
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
V
= 0 V, dIs/dt = 100 A/ms,
GS
I
= 30 A
S
Discharge Time
tb
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance
Q
7.5
nC
nH
RR
L
2.49
0.0164
1.88
S
D
D
G
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
L
L
L
T = 25°C
A
3.46
Gate Resistance
R
G
0.75
W
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3
NTD4809NH
TYPICAL PERFORMANCE CURVES
100
90
80
5.5 V to 10 V
4.5 V
T = 25°C
J
V
≥ 10 V
DS
70
60
80
70
60
50
40
30
20
50
40
30
20
4 V
3.8 V
3.6 V
3.4 V
T = 125°C
J
3.2 V
3 V
T = 25°C
J
10
0
10
0
T = −55°C
J
0
1
2
3
4
5
1
2
3
4
5
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.020
0.018
I
= 30 A
T = 25°C
D
J
T = 25°C
J
0.016
0.014
0.012
0.010
0.008
0.006
0.004
V
= 4.5 V
GS
V
= 11.5 V
GS
0.002
0
3.5 4.5
5.5
6.5
7.5
8.5
9.5 10.5 11.5
10 15
20 25 30
35 40
50 55 60
45
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
1.8
1.7
1.6
1.5
1.4
1.3
V
= 0 V
GS
I
V
= 30 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
100
10
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
T = 25°C
J
0.1
−50 −25
0
25
50
75 100 125 150 175
5
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTD4809NH
TYPICAL PERFORMANCE CURVES
2000
1500
1000
12
Q
T
T = 25°C
J
10
8
C
iss
V
GS
6
Q
Q
gs
gd
4
V
= 15 V
DD
500
0
0 V ≤ V ≤ 11.5 V
GS
= 30 A
C
C
oss
2
0
I
D
T = 25°C
J
rss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage
vs. Total Charge
30
25
20
15
10
100
V
= 0 V
GS
T = 25°C
J
t
r
t
d(off)
10
t
d(on)
t
f
V
= 15 V
= 30 A
= 11.5 V
DD
GS
5
0
I
D
V
1
1
10
R , GATE RESISTANCE (OHMS)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
120
V
= 20 V
GS
I
= 15 A
D
SINGLE PULSE
= 25°C
100
80
T
C
10 ms
60
100 ms
1 ms
40
R
LIMIT
DS(on)
10 ms
dc
20
0
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
10
100
25
50
75
100
125
150
175
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTD4809NH
TYPICAL PERFORMANCE CURVES
100
10
1
25°C
100°C
125°C
1
10
100
1000
PULSE WIDTH (ms)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.05
0.02
P
(pk)
0.1
R
(t) = r(t) R
q
JC
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
SINGLE PULSE
t
1
1
t
2
T
− T = P
R (t)
q
JC
J(pk)
C
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
1.0E−05
1.0E−04
1.0E−03
1.0E−02
t, TIME (ms)
1.0E−01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTD4809NHT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
75 Units / Rail
NTD4809NHT1G
NTD4809NH−35G
IPAK
(Pb−Free)
IPAK Trimmed Lead
(3.5 0.15 mm)
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4809NH
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
R
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
4
2
Z
A
K
1
3
2.29 BSC
−T−
SEATING
PLANE
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
0.155
−−−
F
H
STYLE 2:
PIN 1. GATE
D 3 PL
2. DRAIN
3. SOURCE
4. DRAIN
G
M
T
0.13 (0.005)
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD−01
NOTES:
ISSUE O
E
A
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
E3
E2
A1
L2
L1
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
D2
D
L
MILLIMETERS
DIM MIN
MAX
2.38
0.60
1.10
0.89
1.10
6.22
−−−
A
A1
A2
b
b1
D
D2
E
E2
E3
e
2.19
0.46
0.87
0.69
0.77
5.97
4.80
6.35
4.70
4.45
T
SEATING
PLANE
b1
A1
e
2X
A2
E2
6.73
−−−
5.46
3X b
M
0.13
T
2.28 BSC
D2
L
L1
L2
3.40
−−−
0.89
3.60
2.10
1.27
OPTIONAL
CONSTRUCTION
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7
NTD4809NH
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
STYLE 2:
PIN 1. GATE
G
0.13 (0.005)
T
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTD4809NH/D
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